Systems and methods for controlling a plasma sheath characteristic

Patent metadata

Field	Value
Publication number	US-12362159-B2
Application number	US-202218011826-A
Country	US
Kind code	B2
Filing date	Mar 15, 2022
Priority date	Apr 7, 2021
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

Systems and methods for controlling a plasma sheath characteristic are described. One of the methods includes determining a first value of the plasma sheath characteristic of a plasma sheath formed within a plasma chamber. The method further includes determining whether the first value of the plasma sheath characteristic is within a predetermined range from a preset value of the plasma sheath characteristic. The method also includes modifying a variable of a radio frequency (RF) generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first value is not within the predetermined range from the preset value. The operation of modifying the variable of the RF generator is performed until it is determined that the first value of the plasma sheath characteristic is within the predetermined range from the preset value.

First claim

The invention claimed is:

1. A method for controlling a variable of a radio frequency (RF) generator, comprising:
receiving a first measurement of a voltage of a plasma sheath formed within a plasma chamber and a first value of a total charge of particles of the plasma sheath, wherein the first value is determined based on an optical signal sensed by an optical sensor;
determining a first capacitance of the plasma sheath from the first measurement of the voltage and the first value of the total charge;
determining whether the first capacitance is equal to a predetermined capacitance; and
modifying the variable of the RF generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first capacitance is not equal to the predetermined capacitance, wherein said modifying the variable of the RF generator is performed until it is determined that the first capacitance is equal to the predetermined capacitance.

2. The method of claim 1 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the low frequency RF generator has a lower frequency of operation than a frequency of operation of the high frequency RF generator, the method further comprising:
receiving a second measurement of the voltage of the plasma sheath and a second value of the total charge of particles of the plasma sheath;
determining a second capacitance of the plasma sheath from the second measurement of the voltage and the second value of the total charge;
determining whether the second capacitance is equal to the predetermined capacitance;
changing the variable of the RF generator upon determining that the second capacitance is not equal to the predetermined capacitance, wherein said changing is performed until it is determined that the second capacitance is equal to the predetermined capacitance,
wherein the first measurement is received during a first bin of a cycle of operation of the low frequency RF generator and the second measurement is received during a second bin of the cycle of operation of the low frequency RF generator.

3. The method of claim 2 , wherein the second value is determined based on an optical signal sensed by the optical sensor, wherein the plasma chamber has a window and the optical signals are sensed by the optical sensor via the window.

4. The method of claim 2 , wherein the first and second measurements of voltage are received from a sensor coupled to an RF transmission line, wherein the RF transmission line couples an output of the impedance matching circuit to an input of the plasma chamber, wherein the sensor is coupled closer to the input of the plasma chamber compared to the output of the impedance matching circuit.

5. The method of claim 1 , wherein the total charge of particles is based on a width of the plasma sheath.

6. The method of claim 5 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the first measurement is taken during a bin of a cycle of operation of the low frequency RF generator.

7. The method of claim 5 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the first measurement is received during a bin of a cycle of operation of the low frequency RF generator, wherein said modifying is performed during the bin of the cycle of operation of the low frequency RF generator.

8. The method of claim 5 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the first measurement is received during a bin of a first cycle of operation of the low frequency RF generator, wherein said modifying is performed during a corresponding bin of a second cycle of operation of the low frequency RF generator.

9. The method of claim 8 , wherein the second cycle is consecutive to the first cycle.

10. The method of claim 1 , wherein the variable is power or voltage or frequency.

11. A computer system for controlling a variable of a radio frequency (RF) generator, comprising:
a processor configured to:
receive a first measurement of a voltage of a plasma sheath formed within a plasma chamber and a first value of a total charge of particles of the plasma sheath, wherein the first value is determined based on an optical signal sensed by an optical sensor;
determine a first capacitance of the plasma sheath from the first measurement of the voltage and the first value of the total charge;
determine whether the first capacitance is equal to a predetermined capacitance; and
modify the variable of the RF generator coupled to the plasma chamber via an impedance matching circuit upon determining that the first capacitance is not equal to the predetermined capacitance, wherein the variable of the RF generator is modified until it is determined that the first capacitance is equal to the predetermined capacitance; and

a memory device coupled to the processor.

12. The computer system of claim 11 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the low frequency RF generator has a lower frequency of operation than a frequency of operation of the high frequency RF generator, wherein the processor is configured to:
receive a second measurement of the voltage of the plasma sheath and a second value of the total charge of particles of the plasma sheath;
determine a second capacitance of the plasma sheath from the second measurement of the voltage and the second value of the total charge;
determine whether the second capacitance is equal to the predetermined capacitance; and
change the variable of the RF generator upon determining that the second capacitance is not equal to the predetermined capacitance, wherein the variable of the RF generator is changed until it is determined that the second capacitance is equal to the predetermined capacitance,
wherein the first measurement is received during a first bin of a cycle of operation of the low frequency RF generator and the second measurement is received during a second bin of the cycle of operation of the low frequency RF generator.

13. The computer system of claim 11 , wherein the total charge of particles is based on a width of the plasma sheath.

14. The computer system of claim 13 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the first measurement is received during a bin of a cycle of operation of the low frequency RF generator, wherein the variable is modified during the bin of the cycle of operation of the low frequency RF generator.

15. The computer system of claim 13 , wherein the RF generator is a high frequency RF generator, wherein the impedance matching circuit is coupled to the high frequency RF generator and a low frequency RF generator, wherein the first measurement is received during a bin of a first cycle of operation of the low frequency RF generator, wherein the variable is modified during a corresponding bin of a second cycle of operation of the low frequency RF generator.

16. A plasma system for controlling a v

Assignees

• Lam Res Corp

Inventors

• Marakhtanov Alexei M
• Caron James Eugene
• Holland John Patrick
• Kozakevich Felix Leib
• Bhowmick Ranadeep
• Ji Bing

Classifications

• H01J2237/334

  Etching · CPC title

• H01J2237/24578

  Spatial variables, e.g. position, distance · CPC title

• H01J2237/24564

  Measurements of electric or magnetic variables, e.g. voltage, current, frequency · CPC title

• H01J37/32183 Primary

  Matching circuits · CPC title

• H01J37/3299 Primary

  Feedback systems · CPC title