Method for cleaning substrate

Patent metadata

Field	Value
Publication number	US-12358030-B2
Application number	US-202318315030-A
Country	US
Kind code	B2
Filing date	May 10, 2023
Priority date	Sep 27, 2019
Publication date	Jul 15, 2025
Grant date	Jul 15, 2025

Abstract

A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate includes a first layer over a surface of the substrate and a second layer over the first layer. A plurality of particles are disposed over the surface of the first layer. A first mega sonic agitation is performed on the substrate with applying a first mixture. A second mega sonic agitation is performed on the substrate with applying a second mixture. A frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.

First claim

What is claimed is:

1. A method for cleaning a substrate, comprising:
receiving a substrate with a first layer over a surface of the substrate and a second layer over the first layer, wherein a plurality of particles are disposed over a surface of the first layer;
performing a first mega sonic agitation with applying a first mixture comprising an SC 1 solution, deionized (DI) water, and ozone (O 3 ) on the surface of the substrate, the surface of the first layer and the second layer, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
performing a second mega sonic agitation with applying a second mixture comprising DI water and H 2 on the surface of the substrate, the surface of the first layer and the second layer,
wherein a frequency of the first mega sonic agitation is greater than 3 MHz, and a frequency of the second mega sonic agitation is greater than 3 MHZ,
wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, and a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.

2. The method of claim 1 , further comprising a multilayered reflective structure disposed between the first layer and the substrate.

3. The method of claim 2 , wherein the multilayered reflective structure comprises a Ru/Si multilayered reflective structure, a Mo/Be multilayered reflective structure, a Mo compound/Si compound multilayered reflective structure, a Si/Mo/Ru multilayered reflective structure, a Si/Mo/Ru/Mo multilayered reflective structure or a Si/Ru/Mo/Ru multilayered reflective structure.

4. The method of claim 1 , wherein the first layer comprises a Ru-containing layer.

5. The method of claim 4 , wherein the second layer comprises an absorber.

6. The method of claim 1 , wherein the first layer comprises molybdenum silicide (MoSi), molybdenum-silicide-nitride (MoSiN), molybdenum silicide oxynitride (MoSiON), titanium nitride, titanium silicon nitride or silicon nitride.

7. The method of claim 6 , wherein the second layer comprises chromium (Cr), chromium oxide, chromium nitride and chromium oxynitride.

8. The method of claim 1 , further comprising:
applying a DI water to rinse the substrate; and
performing a spin after the applying of the DI water.

9. The method of claim 1 , further comprising performing a spin after the second mega sonic agitation and the applying of the second mixture.

10. The method of claim 1 , wherein a temperature of the second mixture is between approximately 20° C. and approximately 40° C.

11. The method of claim 1 , further comprising performing a spin after the applying of the first mixture.

12. The method of claim 1 , wherein a duration of the applying of the first mixture is between approximately 8 minutes and approximately 15 minutes.

13. The method of claim 1 , wherein a duration of the applying of the second mixture is between approximately 5 minutes and approximately 15 minutes.

14. The method of claim 1 , wherein the particles comprise noble metals.

15. The method of claim 1 , wherein the particles are in a scale of approximately 1 nanometer to approximately 100 nanometers in size.

16. A method for cleaning a substrate, comprising:
receiving a substrate with a first layer over a surface of the substrate and a second layer over the first layer, wherein a plurality of conductive nanoparticles are disposed over a surface of first layer;
performing a first sonic agitation with applying a first mixture comprising an SC 1 solution, deionized (DI) water, and ozone ( O 3 ) on the surface of the substrate, the surface of the first layer and the second layer, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.;
performing a spin after the first sonic agitation and the applying of the first mixture;
performing a second sonic agitation with applying a second mixture comprising DI water and H 2 on the surface of the substrate, the surface of the first layer and the second layer;
applying a DI water to rinse the surface of the substrate, the surface of the first layer and the second layer; and
performing a spin after the applying of the DI water,
wherein a frequency of the first sonic agitation is greater than 3 MHZ, and a frequency of the second sonic agitation is greater than 3 MHZ,
wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.

17. The method of claim 16 , wherein a duration of the applying of the first mixture is between approximately 8 minutes and approximately 15 minutes.

18. The method of claim 16 , wherein further comprising performing a spin after the second sonic agitation and the applying of the second mixture.

19. The method of claim 16 , wherein a temperature of the second mixture is between approximately 20° C. and 40° C.

20. A method for cleaning a substrate, comprising:
receiving a substrate having a surface and a plurality of insulative patterns disposed on the surface, wherein a plurality of conductive particles are disposed over the surface of the substrate;
performing a first sonic agitation with applying a first mixture comprising an SC 1 solution, deionized (DI) water, and ozone ( O 3 ) on the surface of the substrate and the plurality of insulative patterns, wherein a temperature of the first mixture is between approximately 20° C. and 40° C.; and
performing a second sonic agitation with applying a second mixture on the surface of the substrate and the plurality of insulative patterns, wherein the second mixture comprises DI water and H 2 ,
wherein a frequency of the first sonic agitation is greater than 3 MHz, and a frequency of the second sonic agitation is greater than 3 MHz,
wherein a flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min, a flow rate of the second mixture is between approximately 1000 ml/min and approximately 3000 ml/min.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Hao-Ming
• Lin Chia-Shih

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title

• G03F1/82

  Auxiliary processes, e.g. cleaning or inspecting · CPC title

• B08B2203/005

  the liquid being ozonated · CPC title

• B08B3/12

  by sonic or ultrasonic vibrations · CPC title