Methods for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain and a light emitter including the element, and the obtained element and light emitter

Patent metadata

Field	Value
Publication number	US-12344783-B2
Application number	US-202017613851-A
Country	US
Kind code	B2
Filing date	May 25, 2020
Priority date	May 23, 2019
Publication date	Jul 1, 2025
Grant date	Jul 1, 2025

Abstract

The present invention relates to a method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), comprising: —forming a metal chalcogenide quantum dot solid-state element, and —carrying out an n-doping process on its metal chalcogenide quantum dots to at least partially bleach its band-edge absorption, which comprises: —a partial substitution of chalcogen atoms by halogen atoms, in the metal chalcogenide quantum dots, and/or —a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in the metal chalcogenide quantum dots; and —providing a substance on the metal chalcogenide quantum dots, to avoid oxygen p-doping. The present invention also relates to the obtained n-type doped metal chalcogenide quantum dot solid-state element, a method for obtaining a light emitter with that n-type doped metal chalcogenide quantum dot solid-state element, and the obtained light emitter.

First claim

The invention claimed is:

1. A method for obtaining an n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), wherein said low-threshold refers to a number of excitons per quantum dot lower than the one expected from the excited state degeneracy of the respective quantum dot when undoped, the method comprising:
forming a metal chalcogenide quantum dot solid-state element, and
carrying out an n-doping process on at least a plurality of the metal chalcogenide quantum dots of said metal chalcogenide quantum dot solid-state element, to at least partially bleach its band-edge absorption, wherein said n-doping process comprises:
a partial substitution of chalcogen atoms by halogen atoms, in at least said plurality of metal chalcogenide quantum dots, and/or
a partial aliovalent-cation substitution of bivalent metal cations by trivalent cations, in at least said plurality of metal chalcogenide quantum dots; and

providing a substance on at least said plurality of metal chalcogenide quantum dots, wherein said substance is an oxide-type substance made and arranged to avoid oxygen p-doping of the plurality of metal chalcogenide quantum dots.

2. The method according to claim 1 , wherein said metal chalcogenide is at least one of Pb-, Cd-, and Hg-chalcogenide, wherein said chalcogen atoms are at least one of sulphur, selenium, and tellurium atoms, and wherein said halogen atoms are at least one of iodine, bromine, and chlorine atoms.

3. The method according to claim 1 , wherein said metal chalcogenide is at least one of Pb-, Cd-, and Hg-chalcogenide, wherein said bivalent metal cations are at least one of Pb, Cd, and Hg, in the +2 oxidation state, and wherein said trivalent cations are at least one of In, Bi, Sb, and Ga, in the +3 oxidation state.

4. The method according to claim 1 , comprising providing said substance to:
coat said metal chalcogenide quantum dot solid-state element to isolate the same from ambient oxygen; and/or
infiltrate within the metal chalcogenide quantum dot solid-state element to react with oxygen present therein for suppressing their p-doping effect.

5. The method according to claim 1 , wherein said substance is at least one of alumina, titania, ZnO, and hafnia.

6. The method according to claim 1 , wherein said step of forming said metal chalcogenide quantum dot solid-state element comprises forming a blend with a host matrix of first metal chalcogenide quantum dots and, embedded therein, said plurality of metal chalcogenide quantum dots, which are second metal chalcogenide quantum dots having a smaller or equal bandgap, wherein said second metal chalcogenide quantum dots are larger than said first metal chalcogenide quantum dots, and wherein the method comprises applying said n-doping process at least on the second metal chalcogenide quantum dots so that they are heavily n-doped.

7. The method according to claim 1 , comprising selecting the size of said plurality of metal chalcogenide quantum dots to obtain, after said n-doping process has been carried out thereon, an initial electron occupancy doping <N> D ranging from 1.4 to 5.4.

8. The method according to claim 7 , wherein said step of selecting the size of said plurality of metal chalcogenide quantum dots comprises selecting quantum dot diameters ranging from 5.0 nm to 6.2 nm for PbS colloidal quantum dots.

9. The method according to claim 1 , wherein at least part of said plurality of metal chalcogenide quantum dots are of a core-shell type, each including a core and at least one shell, wherein said core comprises a metal chalcogenide and said shell a distinct metal chalcogenide or an alloy of the metal chalcogenide of the core, and wherein the n-doping process is applied to either the core, the at least one shell, or both.

10. A method for obtaining a light emitter, comprising:
providing a gain medium comprising at least one n-type doped metal chalcogenide quantum dot solid-state element obtained according to the method of claim 1 ; and
providing an optical or electrical pump configured and arranged to excite said at least one n-type doped metal chalcogenide quantum dot solid-state element so that a population inversion is produced therein that generates an amplified spontaneous emission (ASE).

11. A light emitter, comprising:
a gain medium comprising at least one n-type doped metal chalcogenide quantum dot solid-state element obtained according to the method of claim 1 ; and
an optical or electrical pump configured and arranged to excite said at least one n-type doped metal chalcogenide quantum dot solid-state element so that a population inversion is produced therein that generates an amplified spontaneous emission (ASE).

12. A light emitter according to claim 11 , wherein the light emitter is a superluminescence light emitter.

13. A light emitter according to claim 11 , wherein the light emitter is a laser device further comprising a laser optical cavity and, optically coupled thereto, said gain medium, which is a laser gain medium, wherein said laser optical cavity is configured and arranged to provide optical feedback to said amplified spontaneous emission (ASE).

14. A light emitter according to claim 13 , wherein said laser device comprises at least one of a vertical-cavity surface-emitting laser structure (VCSEL), a distributed feedback laser structure (DFB), and a whispering gallery mode laser structure (WGM).

15. A light emitter according to claim 14 , wherein:
said VCSEL structure comprises said laser gain medium with a thickness ranging from 200 nm to 1 μm, sandwiched between two Bragg reflectors forming a photonic bandgap ranging from 1000 nm to 2000 nm;
said DFB structure comprises a waveguide resonator formed by:
a corrugated substrate with corrugations implemented by periodically arranged structured elements forming a grating with a grating height ranging from 20 nm to 500 nm, and a periodicity ranging from 700 nm to 1400 nm, and
said laser gain medium, with a thickness ranging from 20 nm to 1500 nm, arranged on top of said corrugated substrate over said corrugations;
and

said WGM structure comprises said laser gain medium with a thickness ranging from 10 nm to 2000 nm, optically coupled to one or more WGM resonators for single or multi laser mode, wherein the diameter of each resonator ranges from 50 μm to 1000 μm.

16. A light emitter according to claim 11 , configured to emit light with a wavelength ranging from 800 nm to 2400 nm.

17. An n-type doped metal chalcogenide quantum dot solid-state element with optical gain for low-threshold, band-edge amplified spontaneous emission (ASE), wherein said low-threshold refers to a number of excitons per quantum dot lower than the one expected from the excited state degeneracy of the respective quantum dot when undoped, the n-type doped metal chalcogenide quantum dot solid-state element comprising a plurality of metal chalcogenide quantum dots with its band-edge absorption at least partially bleached, wherein said plurality of metal chalcogenide quantum dots comprises:
some chalcogen atoms substituted by halogen atoms, and/or
some bivalent metal cations aliovalent-cation substituted by trivalent cations;
and wherein a substance is provided on at least said plurality of metal chalcogenide quantum dots, wherein said substance is an oxide-type substance made and arranged to avoid oxygen p-doping of the plurality of metal chalcogenide quantum dots.

18. The n-type doped metal chalcogenide quantum dot solid-state element of c

Assignees

• Fundacio Inst De Ciencies Fotoniques
• Inst De Recerca I Estudis Avancats
• Fundacio Inst De Ciencies Fotòniques
• Inst Catalana De Recerca I Estudis Avanats

Inventors

• Konstantatos Gerasimos
• Christodoulou Sotirios

Classifications

• H01S5/347

  in AIIBVI compounds, e.g. ZnCdSe- laser · CPC title

• H01S5/18327

  Structure being part of a DBR (H01S5/18391 takes precedence) · CPC title

• H01S5/12

  the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers (comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18) · CPC title

• H01S5/1078

  with means to control the spontaneous emission, e.g. reducing or reinjection · CPC title

• H01S5/1075

  Disk lasers with special modes, e.g. whispering gallery lasers · CPC title