Light emitting device, an optical spectrometer, and a down-converting film for a light emitting device

Patent metadata

Field	Value
Publication number	US-10937930-B2
Application number	US-201916555536-A
Country	US
Kind code	B2
Filing date	Aug 29, 2019
Priority date	Aug 29, 2018
Publication date	Mar 2, 2021
Grant date	Mar 2, 2021

Abstract

Provided is a light emitting device that includes a substrate; a first electrode formed by a first electrically conductive layer arranged over the substrate; an active light emitting layer arranged over said first electrically conductive layer, and that includes a host matrix and light emitting quantum dots embedded there within; and a second electrode formed by a second electrically conductive layer arranged over the active light emitting layer. The host matrix has charge carrier supplier quantum dots blended with the light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers. Also provided is a spectrometer having the LED and a down-converting film for a LED.

First claim

What is claimed is:

1. A light emitting device comprising:
a substrate;
a first electrode formed by a first electrically conductive layer arranged over said substrate;
an active light emitting layer arranged over said first electrically conductive layer, and that comprises a host matrix and light emitting quantum dots embedded there within, wherein said host matrix comprises charge carrier supplier quantum dots blended with said light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers; and
a second electrode formed by a second electrically conductive layer arranged over said active light emitting layer.

2. The light emitting device of claim 1 , wherein said host matrix comprises a ternary blend formed by said binary blend and further quantum dots made and arranged to passivate electronically possible electron traps of the light emitting quantum dots and to balance charge carrier injection.

3. The light emitting device of claim 1 , wherein said charge carrier supplier quantum dots are smaller than said light emitting quantum dots, have a larger bandgap and form a type-I heterojunction therewith.

4. The light emitting device of claim 3 , wherein said type-I heterojunction has band offsets in the conduction and valence band ranging from 0.05 eV up to 1 eV.

5. The light emitting device of claim 2 , wherein said charge carrier supplier quantum dots are smaller than said light emitting quantum dots, have a larger bandgap and form a type-1 heterojunction therewith, wherein said type-1 heterojunction has band offsets in the conduction and valence band ranging from 0.05 eV up to 1 eV, and wherein said further quantum dots have a bandgap that is larger than that of the charge carrier supplier quantum dots, and a band alignment with respect to the bands of the charge carrier supplier quantum dots and light emitting quantum dots that favors injection of electrons or holes in the light emitting quantum dots, but not both.

6. The light emitting device of claim 5 , wherein a type-I or quasi type-I heterojunction is formed between the further quantum dots and the light emitting quantum dots, with a band offset for the conduction band ranging from 0 eV to 0.5 eV and a large band offset in the valence band in excess of 1 eV.

7. The light emitting device of claim 1 , wherein the concentration of the light emitting quantum dots in the binary blend ranges from 1% up to 20% by volume, and the concentration of the charge carrier supplier quantum dots in the binary blend ranges from 80% up to 99% in volume, preferably from 50% up to 99% by volume.

8. The light emitting device of claim 7 , wherein the concentration of the light emitting quantum dots in the binary blend is chosen to reduce the density of states to an extent that decreases the turn-on voltage of the light emitting device below the bandgap of emission.

9. The light emitting device of claim 8 , wherein said chosen concentration of the light emitting quantum dots in the binary blend is between 1% and 10%, preferably about or below 7.5%, more preferably below 3% and even more preferably of about 1%.

10. The light emitting device of claim 2 , wherein the concentration of the light emitting quantum dots in the ternary blend ranges from 1% up to 20% by volume, and the concentration of the charge carrier supplier quantum dots in the ternary blend ranges from 80% up to 99% in volume, preferably from 50% up to 99% by volume.

11. The light emitting device of claim 10 , wherein the concentration of the light emitting quantum dots in the ternary blend is chosen to reduce the density of states to an extent that decreases the turn-on voltage of the light emitting device below the bandgap of emission.

12. The light emitting device of claim 11 , wherein said chosen concentration of the light emitting quantum dots in the ternary blend is between 1% and 10%, preferably about or below 7.5%, more preferably below 3% and even more preferably of about 1%.

13. The light emitting device of claim 12 , wherein the concentration of the further quantum dots in the ternary blend ranges between 0% and 60% by volume, preferably from 20% up to 50% and more preferably from 30% up to 50%.

14. The light emitting device of claim 1 , wherein the host matrix forms an electrically conductive percolating path, while the light emitting quantum dots are dispersed within the host matrix so distanced and isolated from each other that they do not form any electrically conductive path.

15. The light emitting device of claim 1 , wherein the charge carrier supplier quantum dots possess carrier diffusion lengths larger than 10 nm for both types of charge carriers, electrons and holes, preferably in a range from 10 nm up to 500 nm.

16. The light emitting device of claim 1 , further comprising:
an electron injecting and hole blocking layer arranged between said active light emitting layer and one of said first and second electrodes; and
a hole injecting and electron blocking layer arranged between said active light emitting layer and the other of said first and second electrodes.

17. The light emitting device of claim 16 , wherein said electron injecting and hole blocking layer is arranged between the active light emitting layer and the first electrode, and wherein the hole injecting and electron blocking layer is a semiconductor layer that forms a type-II heterojunction with all of the quantum dots of the active light emitting layer.

18. The light emitting device of claim 17 , wherein the hole injecting and electron blocking semiconductor layer comprises quantum dots.

19. The light emitting device of claim 1 , wherein both the charge carrier supplier quantum dots and the light emitting quantum dots are PbS quantum dots, and/or wherein the further quantum dots are ZnO nanocrystals.

20. The light emitting device of claim 1 , wherein the light emitting device is made to emit infrared, near infrared and/or short-wave infrared light.

21. The light emitting device of claim 1 , wherein the light emitting quantum dots are isolated from one another by a distance ranging from 5 nm up to 999 nm.

22. The light emitting device of claim 1 , wherein the bandgaps of the light emitting quantum dots are from 1.5 eV to 0.5 eV.

23. An optical spectrometer, comprising:
a light emitting device for emitting light with different wavelengths onto an object, wherein the light emitting device comprises:
a substrate;
a first electrode formed by a first electrically conductive layer arranged over said substrate;
an active light emitting layer arranged over said first electrically conductive layer, and that comprises a host matrix and light emitting quantum dots embedded there within, wherein said host matrix comprises charge carrier supplier quantum dots blended with said light emitting quantum dots, forming a binary blend where the charge carrier supplier quantum dots are made and arranged to supply charge carriers to the light emitting quantum dots, and wherein the light emitting quantum dots are made and arranged to accept the supplied charge carriers; and
a second electrode formed by a second electrically conductive layer arranged over said active light emitting layer; and

at least one photodetector made to detect light with any of said different wavelengths.

Assignees

• Fundacio Inst De Ciencies Fotòniques
• Inst Catalana Recerca Estudis Avancats

Inventors

• Konstantatos Gerasimos
• Pradhan Santanu

Classifications

• H10H20/816

  having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/832 Primary

  characterised by their material · CPC title