Substrate processing apparatus, process vessel, method of manufacturing semiconductor device and non-transitory tangible medium

Patent metadata

Field	Value
Publication number	US-12338529-B2
Application number	US-202217885636-A
Country	US
Kind code	B2
Filing date	Aug 11, 2022
Priority date	Sep 24, 2021
Publication date	Jun 24, 2025
Grant date	Jun 24, 2025

Abstract

A technique for connecting a nozzle to a reaction tube while preventing the nozzle from collapsing includes a substrate processing apparatus including: a gas introduction structure comprising a non-metallic material penetrating a side wall of a process vessel and integrated with the side wall as a single structure, wherein a front end thereof protrudes into the process vessel; a nozzle made of a non-metallic material and including: a first straight portion inserted into the gas introduction structure and fluidically communicating with the gas introduction structure; and a second straight portion fluidically communicating with the first straight portion and extending along an inner wall of the process vessel; and a fixing block provided at an inner side of the process vessel and above the gas introduction structure, wherein the fixing block has a groove where the nozzle can be moved in a radial direction of the process vessel.

First claim

The invention claimed is:

1. A substrate processing apparatus comprising:
a gas introduction structure made of a non-metallic material, penetrating a side wall of a process vessel and integrated with the side wall as a single structure, wherein a front end thereof protrudes into the process vessel;
a nozzle made of a non-metallic material and comprising:
a first straight portion inserted into the gas introduction structure and fluidically communicating with the gas introduction structure; and
a second straight portion fluidically communicating with the first straight portion and extending along an inner wall of the process vessel; and

a fixing block provided at an inner side of the side wall of the process vessel and above the gas introduction structure, wherein the fixing block is provided with a groove in which the nozzle is capable of being moved in a radial direction of the process vessel.

2. The substrate processing apparatus of claim 1 , wherein an end of the gas introduction structure at an inner side of the process vessel extends further into the process vessel than the nozzle, and a fastener is inserted into the end of the gas introduction structure at the inner side of the process vessel.

3. The substrate processing apparatus of claim 1 , wherein the fixing block is integrally formed with the process vessel as a single structure, and the groove is open toward an inner side of the process vessel.

4. The substrate processing apparatus of claim 3 , further comprising a restrictor made of a non-metallic material and configured to restrict a movement of the nozzle,
wherein the groove is provided with a width expanding portion, and the restrictor is fitted in the width expanding portion with the nozzle arranged on a bottom portion of the groove located closer to a bottom of the groove than the width expanding portion.

5. The substrate processing apparatus of claim 1 , wherein the fixing block is provided at a height within a heat insulating region of the process vessel or a height lower than a vertical center of the nozzle.

6. The substrate processing apparatus of claim 5 , wherein the fixing block is provided at a distance of 40 cm or less from a furnace opening of the process vessel.

7. The substrate processing apparatus of claim 4 , wherein the width expanding portion is configured so as not to penetrate a lower end of the fixing block.

8. The substrate processing apparatus of claim 4 , wherein a horizontal position of the nozzle is determined by being interposed between an outer peripheral end of the groove and the restrictor.

9. The substrate processing apparatus of claim 2 , wherein the gas introduction structure is provided with an introduction tube whose inner diameter substantially corresponds to an outer diameter of the nozzle, and a notch of a U-shape whose width substantially corresponds to the inner diameter of the introduction tube is provided at a front end and an upper end of the introduction tube.

10. The substrate processing apparatus of claim 9 , wherein a lower end of the nozzle is of a shape corresponding to a surface of the gas introduction structure facing the lower end of the nozzle, and is provided with an opening fluidically communicating between an inside of the nozzle and the introduction tube.

11. The substrate processing apparatus of claim 2 , wherein a lower end of the nozzle is of a shape corresponding to a surface of the gas introduction structure facing the lower end of the nozzle, and is provided with an opening fluidically communicating between an inside of the nozzle and the gas introduction structure.

12. The substrate processing apparatus of claim 1 , wherein the nozzle is provided with a discharge hole through which at least one selected from the group consisting of vaporized hydrogen peroxide, water and ozone is supplied into the process vessel.

13. The substrate processing apparatus of claim 1 , wherein the nozzle is supported by a sleeve that is not rigidly joined to a mounting plate.

14. A process vessel comprising:
a side wall;
a gas introduction structure made of a non-metallic material, penetrating the side wall and integrated with the side wall as a single structure, wherein a front end thereof protrudes into the process vessel; and
a fixing block provided at an inner side of the side wall and above the gas introduction structure, wherein the fixing block is provided with a groove in which a nozzle is capable of being moved in a radial direction of the process vessel,
wherein, when the nozzle comprising a first straight portion and a second straight portion bending and extending from the first straight portion is inserted through the gas introduction structure, the fixing block is configured to be capable of supporting the second straight portion.

15. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a process vessel of a substrate processing apparatus; and
(b) processing the substrate,
wherein the substrate processing apparatus comprises:
a gas introduction structure made of a non-metallic material, penetrating a side wall of a process vessel, and integrated with the side wall of the process vessel as a single structure, wherein a front end thereof protrudes into the process vessel;

a nozzle made of a non-metallic material and comprising:
a first straight portion inserted into the gas introduction structure and fluidically communicating with the gas introduction structure; and
a second straight portion fluidically communicating with the first straight portion and extending along an inner wall of the process vessel; and

a fixing block provided at an inner side of the side wall of the process vessel and above the gas introduction structure, wherein the fixing block is provided with a groove in which the nozzle is capable of being moved in a radial direction of the process vessel.

16. A non-transitory tangible medium storing a program that causes, by a computer, a substrate processing apparatus to perform the method of manufacturing a semiconductor device of claim 15 .

Assignees

• Kokusai Electric Corp

Inventors

• Morita Shinya
• Nakashima Seiyo

Classifications

• H10P72/12

  Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• C23C16/45563 Primary

  Gas nozzles · CPC title