Cu ALLOY BONDING WIRE FOR SEMICONDUCTOR DEVICE
US-2020279824-A1 · Sep 3, 2020 · US
Copper bonding wire
US12334467B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12334467-B2 |
| Application number | US-202117798833-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2021 |
| Priority date | Feb 21, 2020 |
| Publication date | Jun 17, 2025 |
| Grant date | Jun 17, 2025 |
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- Title
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Abstract
Official abstract text for this publication.
There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu2O, CuO and Cu(OH)2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and Cu(OH)2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu2O (Cu[I]) corresponding to monovalent Cu falls within a range from 0.8 to 12.
First claim
Opening claim text (preview).
The invention claimed is: 1. A copper bonding wire a surface of which comprising: Cu, Cu 2 O, CuO, and Cu(OH) 2 , wherein a sum of percentages of Cu, Cu 2 O, CuO and Cu(OH) 2 on the surface of the copper bonding wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, and wherein a ratio Cu[II]/Cu[I], which is a ratio of a total percentage of CuO and Cu(OH) 2 (Cu[II]) corresponding to bivalent Cu to a percentage of Cu 2 O (Cu[I]) corresponding to monovalent Cu, falls within a range from 0.8 to 12. 2. The copper bonding wire according to claim 1 , wherein a ratio [Cu(OH) 2 ]/[CuO], which is a ratio of a percentage of Cu(OH) 2 [Cu(OH) 2 ] to a percentage of CuO [CuO] measured by the X-ray Photoelectron Spectroscopy (XPS), falls within a range from 1 to 5.5. 3. The copper bonding wire according to claim 1 , wherein a ratio [CuO]/[Cu 2 O], which is a ratio of a percentage of CuO [CuO] to a percentage of Cu 2 O [Cu 2 O] measured by the X-ray Photoelectron Spectroscopy (XPS), falls within a range from 0.3 to 6. 4. The copper bonding wire according to claim 1 , wherein a sum of the Cu[I] and the Cu[II] is 50% or more. 5. The copper bonding wire according to claim 1 , containing one or more selected from the group consisting of Pd, Pt, Ag and Rh, and a total concentration thereof is from 100 to 6000 ppm by mass. 6. The copper bonding wire according to claim 1 , wherein a diameter of the copper bonding wire is 15 μm or more and 100 μm or less. 7. The copper bonding wire according to claim 1 which is usable for a semiconductor device.
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Classifications
the connected ends being wedge-shaped · CPC title
the connected ends being ball-shaped · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
of bond wires · CPC title
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Frequently asked questions
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- What does patent US12334467B2 cover?
- There is provided a copper bonding wire that exhibits a favorable bondability even when a scrub at the time of bonding is reduced. The copper bonding wire is characterized in that when a sum of percentages of Cu, Cu2O, CuO and Cu(OH)2 on a surface of the wire as measured by X-ray Photoelectron Spectroscopy (XPS) is defined as 100%, Cu[II]/Cu[I] which is a ratio of a total percentage of CuO and …
- Who is the assignee on this patent?
- Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G01N23/2273. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jun 17 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).