Molybdenum deposition

Patent metadata

Field	Value
Publication number	US-12334351-B2
Application number	US-202017639846-A
Country	US
Kind code	B2
Filing date	Sep 1, 2020
Priority date	Sep 3, 2019
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

Provided are methods of filling patterned features with molybdenum (Mo). The methods involve selective deposition of Mo films on bottom metal-containing surfaces of a feature including dielectric sidewalls. The selective growth of Mo on the bottom surface allows bottom-up growth and high quality, void-free fill. Also provided are related apparatus.

First claim

What is claimed is:

1. A method comprising:
providing a substrate comprising a feature having a feature bottom and feature sidewalls, wherein the feature bottom comprises a metal or metal nitride surface and the feature sidewalls comprise oxide surfaces; and
performing multiple cycles of an atomic layer deposition (ALD) process to selectively deposit a molybdenum (Mo) film on the metal or metal nitride surface relative to the oxide surfaces, wherein the ALD process comprises exposing the feature to alternate pulses of molybdenum-containing oxyhalide precursor and a reducing agent at a first substrate temperature, further comprising, partially filling the feature while the substrate is at the first substrate temperature, and completely filling the feature while the substrate is at a second substrate temperature, the second substrate temperature being greater than the first substrate temperature.

2. The method of claim 1 , wherein the partially filling takes place in a first station of a process chamber, and the completely filling takes place at a second station of the process chamber.

3. The method of claim 1 , further comprising, prior to performing the multiple cycles of the ALD deposition process, exposing the metal or metal nitride surface to a hydrogen-containing plasma.

4. The method of claim 1 , wherein the reducing agent is thermal hydrogen (H 2 ).

5. The method of claim 1 , wherein the reducing agent is provided in a plasma generated from hydrogen (H 2 ).

6. The method of claim 1 , wherein the partial pressure of the reducing agent is at least 10 Torr.

7. The method of claim 1 , wherein the molybdenum-containing oxyhalide precursor is a molybdenum oxychloride.

8. The method of claim 7 , wherein the first substrate temperature is no more than 600° C.

9. The method of claim 8 , wherein the first substrate temperature is at least 350° C.

10. The method of claim 7 , wherein the first substrate temperature is no more than 450° C.

11. The method of claim 7 , wherein the first substrate temperature is no more than 400° C.

12. The method of claim 1 , wherein the molybdenum-containing oxyhalide precursor is a molybdenum oxyfluoride.

13. The method of claim 1 , wherein the metal or metal nitride surface is one of a material from a group consisting of:
cobalt, ruthenium, copper, tungsten, molybdenum, titanium, tin, tantalum, nickel, iridium, and rhodium.

14. The method of claim 1 , wherein the metal or metal nitride surface is one of a material from a group consisting of:
titanium nitride, molybdenum nitride, tungsten nitride, tungsten carbon nitride, and tantalum nitride.

15. The method of claim 1 , wherein the metal or metal nitride surface is an elemental metal surface.

16. The method of claim 1 , wherein the feature sidewalls comprise an oxide selected from:
polyethyleneoxide, tetraethyl orthosilicate, flowable oxide, and a carbon doped oxide.

17. The method of claim 1 , wherein the Mo film on the metal or metal nitride surface is at least about 20 Å thicker than the Mo film on the oxide surfaces of the feature sidewalls.

18. A method comprising:
providing a substrate comprising a feature having a feature bottom and feature sidewalls, wherein the feature bottom comprises a metal or metal nitride surface and the feature sidewalls comprise oxide surfaces; and performing a deposition process to selectively deposit a molybdenum (Mo) film on the metal or metal nitride surface relative to the oxide surfaces, wherein the deposition process comprises exposing the feature to a molybdenum-containing oxyhalide precursor and a reducing agent at a first substrate temperature further comprising, partially filling the feature while the substrate is at the first substrate temperature, and completely filling the feature while the substrate is at a second substrate temperature, the second substrate temperature being greater than the first substrate temperature.

Assignees

• Lam Res Corp

Inventors

• Na Jeong-Seok
• Hsieh Yao-Tsung
• Lai Chiukin Steven
• Van Cleemput Patrick A

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/082

  the openings being tapered via holes · CPC title

• H10P14/418 Primary

  the conductive layers comprising transition metals · CPC title