Power control for rf impedance matching network

Patent metadata

Field	Value
Publication number	US-12334307-B2
Application number	US-202318120591-A
Country	US
Kind code	B2
Filing date	Mar 13, 2023
Priority date	Jul 10, 2017
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

In one embodiment, a system includes an RF source and an RF impedance matching circuit receiving RF power from the RF source. The matching circuit includes at least one variable reactance element, a sensor operably coupled to a component of the matching circuit, and a control circuit. The control circuit receives a signal from the sensor indicative of a parameter value. Upon determining the parameter value meets a first predetermined condition, the control circuit transmits a control signal to the RF source causing the RF source to carry out a power control scheme. The power control scheme causes the RF source to reduce or maintain the RF power without turning off the RF power.

First claim

What is claimed is:

1. A system comprising:
a radio frequency (RF) source configured to provide RF power;
an RF impedance matching circuit comprising:
an RF input configured to receive the RF power from the RF source;
an RF output configured to operably couple to a plasma chamber;
at least one variable reactance element; and
a sensor operably coupled to a component of the matching circuit; and

a control circuit operably coupled to the RF source and to the matching circuit, the control circuit configured to:
receive a signal from the sensor indicative of a parameter value; and
upon determining the parameter value meets a first predetermined condition, transmit a control signal to the RF source causing the RF source to carry out a power control scheme, the power control scheme causing the RF source to reduce or maintain the RF power without turning off the RF power.

2. The system of claim 1 wherein the component of the matching circuit is an electronically variable capacitor, a fixed capacitor, an inductor, or a diode.

3. The system of claim 1 wherein the sensor is positioned at the RF input or the RF output of the matching circuit.

4. The system of claim 1 wherein the parameter value is a voltage value, current value, a value indicative of reflected power, or a temperature value associated with the component of the matching circuit.

5. The system of claim 1 :
further comprising an interlock for shutting down the system or the plasma chamber upon meeting an interlock condition;
wherein the interlock condition is separate and distinct from the first predetermined condition.

6. The system of claim 1 wherein neither the determination that the parameter value has met the first predetermined condition nor the transmission of the control signal causes the plasma chamber to discontinue its operation.

7. The system of claim 1 wherein the determination the parameter value meets the first predetermined condition comprises:
determining the parameter value is outside a predetermined range of values;
determining the parameter value is within a predetermined range of values;
determining the parameter value is at or below a predetermined value; or
determining the parameter value is at or above a predetermined value.

8. The system of claim 1 wherein the control circuit is further configured to:
repeat the step of receiving a signal from the sensor indicative of a parameter value to receive a new parameter value; and
upon determining the new parameter value meets a second predetermined condition, transmit a second control signal to the RF generator to cause the RF source to discontinue the power control scheme.

9. The system of claim 1 wherein the RF source and the matching circuit are positioned within a shared enclosure.

10. The system of claim 1 wherein the control circuit comprises more than one more control circuit in electrical communication.

11. An apparatus for fabricating a semiconductor comprising:
a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate;
an RF source configured to provide RF power;
an RF impedance matching circuit positioned between the plasma chamber and the RF source, the matching circuit comprising:
at least one variable reactance element; and
a sensor operably coupled to a component of the matching circuit; and

a control circuit operably coupled to the RF source and to the matching circuit, the control circuit configured to:
receive a signal from the sensor indicative of a parameter value; and
upon determining the parameter value meets a first predetermined condition, transmit a control signal to the RF source causing the RF source to carry out a power control scheme, the power control scheme causing the RF source to reduce or maintain the RF power without turning off the RF power.

12. The apparatus of claim 11 wherein the component of the matching circuit is an electronically variable capacitor, a fixed capacitor, an inductor, or a diode.

13. The apparatus of claim 11 wherein the sensor is positioned at the RF input or the RF output of the matching circuit.

14. The apparatus of claim 11 wherein the parameter value is a voltage value, current value, a value indicative of reflected power, or a temperature value associated with the component of the matching circuit.

15. The apparatus of claim 11 :
further comprising an interlock for shutting down the system or the plasma chamber upon meeting an interlock condition;
wherein the interlock condition is separate and distinct from the first predetermined condition.

16. The apparatus of claim 11 wherein neither the determination that the parameter value has met the first predetermined condition nor the transmission of the control signal causes the plasma chamber to discontinue its operation.

17. A method of controlling power to an RF impedance matching circuit, the method comprising:
coupling a system to a plasma chamber, the system comprising:
an RF source; and
an RF impedance matching circuit comprising:
an RF input operably coupled to the RF source;
an RF output configured to operably couple to a plasma chamber;
at least one variable reactance element; and
a sensor operably coupled to a component of the matching circuit;

the RF source providing RF power to the matching circuit;
receiving a signal from the sensor indicative of a parameter value; and
upon determining the parameter value meets a first predetermined condition, transmitting a control signal to the RF source causing the RF source to carry out a power control scheme, the power control scheme causing the RF source to reduce or maintain the RF power without turning off the RF power.

18. The method of claim 17 wherein the component of the matching circuit is an electronically variable capacitor, a fixed capacitor, an inductor, or a diode.

19. The method of claim 17 wherein the parameter value is a voltage value, current value, a value indicative of reflected power, or a temperature value associated with the component of the matching circuit.

20. The method of claim 17 further comprising:
repeating the step of receiving a signal from the sensor indicative of a parameter value to receive a new parameter value; and
upon determining the new parameter value meets a second predetermined condition, transmitting a second control signal to the RF generator to cause the RF source to discontinue the power control scheme.

Assignees

• Reno Tech Inc
• Asm Ip Holding Bv

Inventors

• Decker Ronald Anthony
• Bhutta Imran Ahmed

Classifications

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title