Aluminum alloy conductor, insulated wire including the conductor, and method for manufacturing the insulated wire
US-2018254118-A1 · Sep 6, 2018 · US
US12325901B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12325901-B2 |
| Application number | US-202017764872-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 17, 2020 |
| Priority date | Oct 1, 2019 |
| Publication date | Jun 10, 2025 |
| Grant date | Jun 10, 2025 |
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There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.
Opening claim text (preview).
The invention claimed is: 1. An Al wiring material containing Sc, Zr, and Ni so as to satisfy 0.01≤ x 1≤0.5, 0.01 ≤x 2≤0.3, and 10 ≤x 3≤500 where x1 is a content of Sc [% by weight], x2 is a content of Zr [% by weight], and x3 is a content of Ni [ppm by weight], with the balance comprising 99.8% by weight or more Al, and wherein a tensile strength of the Al wiring material is 140 MPa or less. 2. The Al wiring material according to claim 1 , wherein x1 and x2 satisfy a relation of x2/x1>0.5. 3. The Al wiring material according to claim 1 , wherein Vickers hardness of a longitudinal axis part of the Al wiring material is 40 Hv or less. 4. The Al wiring material according to claim 1 , wherein the Al wiring material has been subjected to a thermal refining heat treatment at 580 to 640° C. for 30 seconds or less. 5. The Al wiring material according to claim 1 , wherein the Al wiring material does not have a coating that contains a metal other than Al as a main component. 6. The Al wiring material according to claim 1 , wherein the Al wiring material is a bonding wire. 7. The Al wiring material according to claim 1 , wherein the Al wiring material is subjected to aging heat treatment at 250 to 400° C. for 30 to 60 minutes after being connected to a member to be connected. 8. A semiconductor device comprising the Al wiring material according to claim 1 .
comprising aluminium [Al] · CPC title
being rectangular · CPC title
the connected ends being wedge-shaped · CPC title
comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title
of bond wires · CPC title
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