AI wiring material

US12325901B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12325901-B2
Application numberUS-202017764872-A
CountryUS
Kind codeB2
Filing dateSep 17, 2020
Priority dateOct 1, 2019
Publication dateJun 10, 2025
Grant dateJun 10, 2025

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.

First claim

Opening claim text (preview).

The invention claimed is: 1. An Al wiring material containing Sc, Zr, and Ni so as to satisfy 0.01≤ x 1≤0.5, 0.01 ≤x 2≤0.3, and 10 ≤x 3≤500 where x1 is a content of Sc [% by weight], x2 is a content of Zr [% by weight], and x3 is a content of Ni [ppm by weight], with the balance comprising 99.8% by weight or more Al, and wherein a tensile strength of the Al wiring material is 140 MPa or less. 2. The Al wiring material according to claim 1 , wherein x1 and x2 satisfy a relation of x2/x1>0.5. 3. The Al wiring material according to claim 1 , wherein Vickers hardness of a longitudinal axis part of the Al wiring material is 40 Hv or less. 4. The Al wiring material according to claim 1 , wherein the Al wiring material has been subjected to a thermal refining heat treatment at 580 to 640° C. for 30 seconds or less. 5. The Al wiring material according to claim 1 , wherein the Al wiring material does not have a coating that contains a metal other than Al as a main component. 6. The Al wiring material according to claim 1 , wherein the Al wiring material is a bonding wire. 7. The Al wiring material according to claim 1 , wherein the Al wiring material is subjected to aging heat treatment at 250 to 400° C. for 30 to 60 minutes after being connected to a member to be connected. 8. A semiconductor device comprising the Al wiring material according to claim 1 .

Assignees

Inventors

Classifications

  • comprising aluminium [Al] · CPC title

  • being rectangular · CPC title

  • the connected ends being wedge-shaped · CPC title

  • comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

  • of bond wires · CPC title

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Frequently asked questions

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What does patent US12325901B2 cover?
There is provided an Al wiring material which suppresses a chip crack and achieves thermal shock resistance while suppressing lowering of a yield at the time of manufacture. The Al wiring material contains at least Sc and Zr so as to satisfy 0.01≤x1≤0.5 and 0.01≤x2≤0.3 where x1 is a content of Sc [% by weight] and x2 is a content of Zr [% by weight], with the balance comprising Al.
Who is the assignee on this patent?
Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
What technology area does this patent fall under?
Primary CPC classification C22C21/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 10 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).