Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methods

Patent metadata

Field	Value
Publication number	US-12324154-B2
Application number	US-202318492689-A
Country	US
Kind code	B2
Filing date	Oct 23, 2023
Priority date	Aug 31, 2020
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

Microelectronic devices include a stack structure comprising a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of pillars extends through the stack structure. At least one isolation structure extends through an upper stack portion of the stack structure. The at least one isolation structure protrudes into pillars of neighboring columns of pillars of the series of pillars. Conductive contacts are in electrical communication with the pillars into which the at least one isolation structure protrudes. Related methods and electronic systems are also disclosed.

First claim

What is claimed is:

1. A microelectronic device, comprising:
a stack structure comprising vertically repeated tiers, the tiers individually comprising at least one insulative structure and at least one conductive structure;
a series of pillar structures extending through the stack structure, at least one of the pillar structures of the series comprising:
a lower pillar structure comprising a channel material and defining a substantially circular cross-sectional area; and
an upper pillar structure above the lower pillar structure, the upper pillar structure comprising an additional channel material and a plug structure, the plug structure comprising a conductive semiconductor material, the upper pillar structure and the plug structure thereof defining a partially-circular cross-sectional area; and

at least one isolation structure extending partially into neighboring upper pillar structures of neighboring pillar structures of the series of pillar structures.

2. The microelectronic device of claim 1 , wherein the at least one isolation structure is directly adjacent the plug structure defining the partially-circular cross-sectional area.

3. The microelectronic device of claim 1 , wherein the at least one isolation structure comprises substantially planar sidewalls.

4. The microelectronic device of claim 1 , wherein the at least one isolation structure comprises non-planar sidewalls.

5. The microelectronic device of claim 1 , further comprising a series of additional pillar structures extending through the stack structure horizontally adjacent to the series of pillar structures, at least one of the additional pillar structures comprising:
an other lower pillar structure comprising the channel material and defining the substantially circular cross-sectional area; and
an other upper pillar structure above the other lower pillar structure, the other upper pillar structure comprising the additional channel material and an other plug structure, the other plug structure comprising the conductive semiconductor material, the other upper pillar structure and the other plug structure thereof defining a substantially circular cross-sectional area.

6. The microelectronic device of claim 1 , wherein the stack structure further comprises an additional insulative structure between:
the tiers of a lower portion of the stack structure, through which the lower pillar structure extends; and
the tiers of an upper portion of the stack structure, through which the upper pillar structure extends,
the additional insulative structure being greater in vertical height than individual ones of the at least one insulative structure of the tiers.

7. The microelectronic device of claim 1 , further comprising slit structures extending through the stack structure to define blocks.

8. The microelectronic device of claim 7 , wherein, adjacent the slit structures, the at least one conductive structure of the tiers is laterally recessed.

9. A microelectronic device, comprising:
a stack structure comprising vertically repeated tiers, the tiers individually comprising at least one insulative structure and at least one conductive structure;
a series of pillar structures extending through the stack structure, at least one of the pillar structures of the series comprising:
a lower pillar structure comprising a channel material and defining a substantially circular cross-sectional area; and
an upper pillar structure above the lower pillar structure, the upper pillar structure comprising an additional channel material and a plug structure, the plug structure comprising a conductive semiconductor material, the upper pillar structure and the plug structure thereof defining a partially-circular cross-sectional area; and

wherein:
the lower pillar structure further comprises an insulative fill structure horizontally within the channel material; and
the upper pillar structure further comprises an additional insulative fill structure horizontally within the additional channel material.

10. The microelectronic device of claim 9 , wherein the channel material and the additional channel material comprise a doped semiconductor material.

11. The microelectronic device of claim 9 , wherein the insulative fill structure of the lower pillar structure is spaced from the additional insulative fill structure of the upper pillar structure by a portion of the additional channel material.

12. The microelectronic device of claim 9 , wherein the insulative fill structure of the lower pillar structure is substantially continuous with the additional insulative fill structure of the upper pillar structure.

13. A microelectronic device, comprising:
a stack structure comprising vertically repeated tiers, the tiers individually comprising at least one insulative structure and at least one conductive structure;
a first series of pillar structures extending through the stack structure;
a second series of pillar structures horizontally neighboring the first series of pillar structures, the second series of pillar structures extending through the stack structure; and
an elongate isolation structure extending through upper elevations of the stack structure in a region between the first series of pillar structures and the second series of pillar structures,
the pillar structures of the first series and of the second series individually comprising:
a lower pillar structure elevationally below the elongate isolation structure, the lower pillar structure comprising a channel material and defining a substantially circular perimeter; and
an upper pillar structure horizontally adjacent the elongate isolation structure, the upper pillar structure comprising an additional channel material and a plug structure, the upper pillar structure and the plug structure thereof defining a partially-circular perimeter.

14. The microelectronic device of claim 13 , further comprising slit structures extending through the stack structure substantially parallel to the elongate isolation structure.

15. The microelectronic device of claim 13 , wherein the upper pillar structure and the plug structure define a substantially planar sidewall directly adjacent the elongate isolation structure.

16. The microelectronic device of claim 13 , wherein the upper pillar structure and the plug structure define a substantially non-planar sidewall directly adjacent the elongate isolation structure.

17. The microelectronic device of claim 13 , further comprising additional conductive structures in electrical communication with the plug structures.

18. A method of forming a microelectronic device, the method comprising:
forming a stack structure comprising vertically repeated tiers, the tiers individually comprising at least one insulative structure and at least one conductive structure;
forming a series of pillar structures extending through the stack structure, comprising:
forming, in lower elevations of the stack structure, a channel material defining a substantially circular perimeter of a lower channel region of an individual pillar structure of at least one of the pillar structures of the series; and
forming, in upper elevations of the stack structure above the lower elevations, an additional channel material defining a substantially circular perimeter of an upper channel region of the individual pillar structure of the at least one of the pillar structures of the series; and
forming, a plug structure comprising a conductive semiconductor material in physical contact with the additional channel material, the plug structure defining a su

Assignees

• Lodestar Licensing Group Llc

Inventors

• King Matthew J
• Daycock David A
• Fukuzumi Yoshiaki
• Fayrushin Albert
• Hill Richard J
• Tiwari Chandra S
• Fujiki Jun

Classifications

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10D62/115

  Dielectric isolations, e.g. air gaps · CPC title

• H10B43/27 Primary

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title

• H10B41/27

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title