Transversely-excited acoustic resonator with Z-cut lithium niobate plate

Patent metadata

Field	Value
Publication number	US-12323133-B2
Application number	US-202318330809-A
Country	US
Kind code	B2
Filing date	Jun 7, 2023
Priority date	Jun 15, 2018
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate, a lithium niobate plate having front and back surfaces, wherein Euler angles of the lithium niobate plate are [0°, β, 0°], where β is greater than or equal to 0° and less than or equal to 60°, and an acoustic Bragg reflector between the surface of the substrate and the back surface of the lithium niobate plate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. At least one finger of the IDT is disposed in a groove in the lithium niobate plate.

First claim

It is claimed:

1. A bulk acoustic resonator comprising:
a substrate;
a piezoelectric plate supported by the substrate and having a diaphragm that is over a cavity; and
an interdigital transducer (IDT) on a surface of the piezoelectric plate and having interleaved fingers on the diaphragm,
wherein XYZ is a three-dimensional coordinate system that is aligned with crystalline axes of piezoelectric material of the piezoelectric plate and that includes an X axis and a Y axis defining a plane substantially parallel the surface of the piezoelectric plate, and
wherein the piezoelectric plate comprises a Z crystalline axis that is orthogonal to the surface of the piezoelectric plate.

2. The bulk acoustic resonator of claim 1 , wherein the piezoelectric plate comprises Euler angles that are [0°, 0°, 90°].

3. The bulk acoustic resonator of claim 1 , wherein the piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT primarily excites a shear acoustic wave in the diaphragm, the primarily shear acoustic wave being a bulk shear mode having a predominantly lateral electric field in the piezoelectric layer wherein atomic motion is also predominantly lateral, while the primarily excited shear acoustic wave propagates along a direction substantially orthogonal to the surface of the piezoelectric plate, which is also orthogonal to a direction of the predominantly lateral electric field in the piezoelectric plate that is created between the interleaved fingers of the IDT.

4. The bulk acoustic resonator of claim 3 , wherein a direction of acoustic energy flow of the primary shear acoustic mode is substantially orthogonal to opposing front and back surfaces of the diaphragm.

5. The bulk acoustic resonator of claim 1 , wherein the piezoelectric plate has a thickness in a direction orthogonal to a surface of the diaphragm that is greater than or equal to 200 nm and less than or equal to 1000 nm.

6. The bulk acoustic resonator of claim 5 , wherein the interleaved fingers of the IDT have a pitch that is greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.

7. The bulk acoustic resonator of claim 6 , wherein:
the interleaved fingers of the IDT have a width in a direction perpendicular to a direction in which the interleaved fingers extend, and
the pitch is greater than or equal to 2 times the width and less than or equal to 25 times the width of the interleaved fingers.

8. The bulk acoustic resonator of claim 1 , further comprising a dielectric layer on the surface of the piezoelectric plate and between the interleaved fingers of the IDT.

9. The bulk acoustic resonator of claim 1 , wherein the substrate comprises a combination of materials and the cavity extends in the substrate.

10. The bulk acoustic resonator of claim 1 , wherein the piezoelectric plate comprises lithium niobate.

11. A filter device comprising:
a plurality of bulk acoustic resonators each comprising:
a substrate;
a piezoelectric plate supported by the substrate and having a diaphragm that is over a cavity; and
an interdigital transducer (IDT) on a surface of the piezoelectric plate such that interleaved fingers of the IDT are on the diaphragm,
wherein XYZ is a three-dimensional coordinate system that is aligned with crystalline axes of piezoelectric material of the piezoelectric plate and that includes an X axis and a Y axis defining a plane substantially parallel the surface of the piezoelectric plate, and
wherein the piezoelectric plate comprises a Z crystalline axis that is orthogonal to the surface of the piezoelectric plate.

12. The filter device of claim 11 , wherein the piezoelectric plate comprises lithium niobate with Euler angles that are [0°, 0°, 90°].

13. The filter device of claim 11 , wherein the piezoelectric plate and the IDT of each of the plurality of bulk acoustic resonators is configured such that a radio frequency signal applied to the IDT primarily excites a shear acoustic wave in the respective diaphragm, the primarily shear acoustic wave being a bulk shear mode having a predominantly lateral electric field in the piezoelectric layer wherein atomic motion is also predominantly lateral, while the primarily excited shear acoustic wave propagates along a direction substantially orthogonal to the surface of the piezoelectric plate, which is also orthogonal to a direction of the predominantly lateral electric field in the piezoelectric plate that is created between the interleaved fingers of the IDT.

14. The filter device of claim 13 , wherein a direction of acoustic energy flow of the primary shear acoustic mode is substantially orthogonal to opposing front and back surfaces of the respective diaphragm.

15. The filter device of claim 11 , wherein the piezoelectric plate has a thickness in a direction orthogonal to a surface of the respective diaphragm that is greater than or equal to 200 nm and less than or equal to 1000 nm.

16. The filter device of claim 15 , wherein the interleaved fingers of each IDT have a pitch that is greater than or equal to 2 times the thickness of the piezoelectric plate and less than or equal to 25 times the thickness of the piezoelectric plate.

17. The filter device of claim 16 , wherein:
the interleaved fingers of each IDT have a width in a direction perpendicular to a direction in which the interleaved fingers extend, and
the pitch is greater than or equal to 2 times the width and less than or equal to 25 times the width of the interleaved fingers.

18. The filter device of claim 11 , wherein the substrate of each of the plurality of bulk acoustic resonators comprises a combination of materials and the cavity extents in the respective substrate.

19. The filter device of claim 11 , wherein the plurality of bulk acoustic resonators include:
a plurality of acoustic resonators that includes a shunt resonator and a series resonator, and
a thickness of a first dielectric layer over the shunt resonator is greater than a thickness of a second dielectric layer over the series resonator.

20. The filter device of claim 11 , wherein the piezoelectric plate comprises lithium niobate.

Assignees

• Murata Manufacturing Co

Inventors

• Yantchev Ventsislav
• Plesski Viktor
• Garcia Bryant

Classifications

• H10N30/877

  Conductive materials · CPC title

• H03H9/564

  implemented with thin-film techniques · CPC title

• H03H3/02 Primary

  for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence) · CPC title

• H03H2003/023

  the resonators or networks being of the membrane type · CPC title

• H03H9/02039

  consisting of a material from the crystal group 32, e.g. langasite, langatate, langanite · CPC title