Piezoelectric element, ultrasonic probe, ultrasonic measurement device, and manufacturing method of piezoelectric element
US-2017143308-A1 · May 25, 2017 · US
Method for producing piezoelectric composite substrate
US8932686B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8932686-B2 |
| Application number | US-60812009-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 29, 2009 |
| Priority date | Oct 31, 2008 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He + ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apart from a surface of the single-crystal base. In the separation step, the microcavities formed in the ion-implantation step are subjected to thermal stress to divide the separation layer of the piezoelectric single-crystal base, thereby detaching the single-crystal thin film.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for producing a piezoelectric composite substrate including a single-crystal thin film made of a piezoelectric material, the method comprising: an ion-implantation step of implanting rare-gas ions into a single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and spaced apart from a surface of the single-crystal base; a separation step of subjecting the mic…
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Classifications
Electricity · mapped topic
- H01L41/312Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8932686B2 cover?
- A method for producing a piezoelectric composite substrate having a single-crystal thin film of a piezoelectric material includes an ion-implantation step and a separation step. In the ion-implantation step, He + ions are implanted into the single-crystal base made of the piezoelectric material to form localized microcavities in a separation layer located inside the single-crystal base and apa…
- Who is the assignee on this patent?
- Hayakawa Norihiro, Iwamoto Takashi, Kando Hajime, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L41/312. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).