Thin film deposition process

Patent metadata

Field	Value
Publication number	US-12322591-B2
Application number	US-202117382349-A
Country	US
Kind code	B2
Filing date	Jul 22, 2021
Priority date	Jul 27, 2020
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

Provided is a thin film deposition process that allows high-precision control of the in-plane distribution of a thin film being deposited on a substrate. The process is a process of depositing a thin film on a substrate in a chamber by atomic layer deposition (ALD) which includes repeating a deposition cycle to deposit the thin film on the substrate. The deposition cycle includes the steps of: feeding a reactive gas and a carrier gas to the chamber and feeding a source gas at a reduced concentration to the chamber to allow the source gas to adsorb on the substrate; feeding the reactive gas and the source gas to the chamber to allow the source gas to adsorb on the substrate; feeding the reactive gas and the carrier gas to the chamber to purge, from the chamber, the source gas not adsorbing on the substrate; applying RF power to the chamber to turn the reactive gas into a plasma so that the source gas activated by the plasma is allowed to come into contact with a surface of the substrate; and feeding the reactive gas and the carrier gas to the chamber to purge, from the chamber, the source gas remaining unreacted and the reactive gas.

First claim

What is claimed is:

1. A process of depositing a thin film on a substrate in a chamber by atomic layer deposition (ALD),
the process comprising repeating a deposition cycle to deposit the thin film on the substrate,
the deposition cycle comprising the steps of:
feeding a reactive gas through a first line and a carrier gas through a second line, the reactive gas and the carrier gas provided through a gas feeder to the chamber and, while feeding the reactive gas and the carrier gas, providing the carrier gas through a third line coupled to the second line and to an inlet of a reservoir containing a source gas and providing the carrier gas and the source gas through a fourth line coupled to an outlet of the reservoir and to the second line, wherein the second line includes a valve that is open and is downstream of a location where the third line is coupled to the second line and is upstream of a location where the fourth line is coupled to the second line thereby feeding the source gas at a first concentration to the chamber to allow the source gas to adsorb on the substrate;
before or after feeding the source gas at the first concentration, closing the valve thereby feeding the reactive gas and the carrier gas and the source gas at a second concentration to the chamber to allow the source gas to adsorb onto the substrate;
after feeding the source gas at the first concentration and feeding the source gas at the second concentration, continue feeding the reactive gas and the carrier gas to the chamber to purge, from the chamber, the source gas not adsorbing on the substrate;
applying power to turn the reactive gas into a plasma so that the reactive gas activated by the plasma is allowed to come into contact with a surface of the substrate; and
after the step of applying power, feeding the reactive gas and the carrier gas to the chamber to purge the chamber,
wherein the first concentration is less than the second concentration.

2. The process according to claim 1 , wherein the step of feeding a reactive gas and a carrier gas to the chamber and feeding the source gas at a first concentration to the chamber to allow the source gas to adsorb on the substrate is performed before the step of feeding the reactive gas and the source gas at the second concentration to the chamber to allow the source gas to adsorb on the substrate.

3. The process according to claim 1 , wherein the step of feeding a reactive gas and a carrier gas to the chamber and feeding the source gas at the first concentration to the chamber to allow the source gas to adsorb on the substrate is performed after the step of feeding the reactive gas and the source gas at the second concentration to the chamber to allow the source gas to adsorb on the substrate.

4. The process according to claim 1 , wherein the reactive gas is selected from the group consisting of an oxygen (O 2 ) gas, a nitrous oxide (N 2 O) gas, a carbon dioxide (CO 2 ) gas, a nitrogen (N 2 ) gas, and an ammonia (NH 3 ) gas.

5. The process according to claim 1 , wherein the carrier gas is selected from the group consisting of a helium (He) gas, an argon (Ar) gas, and a hydrogen (H 2 ) gas.

6. The process according to claim 1 , wherein the source gas comprises an aminosilane.

7. The process according to claim 1 , wherein the thin film comprises a SiO 2 film, a SiN film, or a SiC film.

8. The process according to claim 1 , wherein the deposition cycle is repeated until a desired film thickness is reached.

9. The process according to claim 1 , further comprising closing an inlet valve coupled to the inlet and an outlet valve coupled to the outlet during the step of feeding the reactive gas and the carrier gas to the chamber to purge.

10. The process according to claim 3 , wherein during a transition between feeding the reactive gas and the source gas at the second concentration and feeding the reactive gas and the carrier gas to the chamber and feeding the source gas at the first concentration, the valve is opened to change a concentration of the source gas from the second concentration to the first concentration.

11. The process according to claim 1 , wherein the reactive gas and the carrier gas are continuously fed into the chamber throughout the steps of the deposition cycle.

12. The process according to claim 1 , comprising repeating the steps of feeding the reactive gas and the carrier gas to the chamber and feeding the source gas at the first concentration and feeding the reactive gas and the source gas at the second concentration are repeated prior to the step of applying power to the chamber.

13. The process according to claim 1 , wherein during the step of applying power, power is applied to the gas feeder.

14. The process according to claim 1 , wherein the method does not include a purge step between the steps of feeding the source gas at the first concentration and feeding the source gas at the second concentration.

15. The process according to claim 1 , wherein the step of feeding the source gas at the second concentration immediately follows the step of feeding the source gas at the first concentration.

Assignees

• Asm Ip Holding Bv

Inventors

• Inoue Naoki

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title