Bio-field effect transistor device

Patent metadata

Field	Value
Publication number	US-12320775-B2
Application number	US-202318228303-A
Country	US
Kind code	B2
Filing date	Jul 31, 2023
Priority date	Jul 27, 2017
Publication date	Jun 3, 2025
Grant date	Jun 3, 2025

Abstract

A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate having a first surface and a second surface;
a biological field effect transistor (BioFET), disposed on the substrate, comprising:
a first gate disposed on the first surface of the substrate; and
a first pair of source/drain (S/D) regions disposed in the substrate;

an access FET, comprising:
a second gate disposed on the first surface of the substrate; and
a second pair of S/D regions disposed in the substrate;

an isolation layer, disposed on the second surface of the substrate, comprising an opening disposed on the first gate; and
a continuous interface layer disposed on the isolation layer and in the opening and extending over the BioFET and the access FET.

2. The semiconductor device of claim 1 , wherein the continuous interface layer comprises a high-k dielectric layer.

3. The semiconductor device of claim 1 , wherein the continuous interface layer is disposed along sidewalls of the isolation layer that are exposed in the opening and on a portion of the second surface of the substrate that is exposed in the opening.

4. The semiconductor device of claim 1 , wherein the continuous interface layer is in contact with a channel region of the BioFET.

5. The semiconductor device of claim 1 , wherein the isolation layer is in contact with a channel region of the access FET.

6. The semiconductor device of claim 1 , wherein the BioFET further comprises a fluid gate disposed on the continuous interface layer.

7. The semiconductor device of claim 1 , further comprising a microfluidic channel disposed on the BioFET and the access FET.

8. The semiconductor device of claim 1 , wherein one of the first pair of S/D regions is electrically coupled to one of the second pair of S/D regions.

9. The semiconductor device of claim 1 , further comprising a piezoelectric mixer disposed on the BioFET and the access FET.

10. The semiconductor device of claim 1 , further comprising a piezoelectric mixer bonded to the continuous interface layer.

11. A semiconductor device, comprising:
a substrate having a first surface and a second surface;
a biological field effect transistor (BioFET), disposed on the substrate, comprising:
first and second gates disposed on the first surface of the substrate;
a first source/drain (S/D) region disposed in the substrate and coupled to a ground potential; and
a common source/drain (S/D) region disposed in the substrate and between the first and second gates;

an access FET, comprising:
a second gate disposed on the first surface of the substrate; and
a second S/D region disposed in the substrate and coupled to the common S/D region;

an isolation layer, disposed on the second surface of the substrate, comprising an opening disposed on the first gate; and
a dielectric layer disposed on the isolation layer and in the opening and extending over the bioFET and the access FET.

12. The semiconductor device of claim 11 , wherein the BioFET further comprises a sensing gate disposed on the second surface of the substrate.

13. The semiconductor device of claim 11 , wherein the dielectric layer comprises a high-k dielectric layer.

14. The semiconductor device of claim 11 , wherein the BioFET further comprises first and second channel regions disposed on first and second sides of the common S/D region, respectively, and
wherein the dielectric layer is in contact with the first and second channel regions.

15. The semiconductor device of claim 11 , further comprising a microfluidic channel disposed on the BioFET and the access FET.

16. The semiconductor device of claim 11 , further comprising a piezoelectric mixer configured to form an enclosed fluidic region on the opening.

17. A method, comprising:
forming a biological field effect transistor (BioFET) on a substrate with a first surface and a second surface, wherein forming the BioFET comprises:
forming a first gate on the first surface of the substrate; and
forming a first pair of source/drain (S/D) regions in the substrate;

forming an access FET on the substrate, wherein forming the access FET comprises:
forming a second gate on the first surface of the substrate; and
forming a second pair of S/D regions in the substrate;

depositing an isolation layer on the second surface of the substrate;
etching the isolation layer to form an opening overlapping the first gate and non-overlapping with the second gate; and
depositing a continuous dielectric layer on the BioFET and the access FET.

18. The method of claim 17 , wherein etching the isolation layer comprises exposing a channel region disposed between the first pair of S/D regions.

19. The method of claim 17 , wherein depositing the continuous dielectric layer comprises depositing a high-k dielectric layer.

20. The method of claim 17 , wherein depositing the continuous dielectric layer comprises depositing a high-k dielectric layer along sidewalls of the isolation layer that are exposed in the opening and on a portion of the second surface of the substrate that is exposed in the opening.

Assignees

• Tawian Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Jui-Cheng
• Chang Yi-Hsien
• Wen Chin-Hua
• Cheng Chun-Ren
• Huang Shih-Fen
• Chen Tung-Tsun
• Huang Yu-Jie
• Lin Ching-Hui
• Cheng Sean
• Chang Hector

Classifications

• G01N33/5438

  Electrodes · CPC title

• C12Q1/6825

  Nucleic acid detection involving sensors · CPC title

• B01L2300/0887

  Laminated structure · CPC title

• B01L2300/0645

  Electrodes · CPC title

• B01L2300/06

  Auxiliary integrated devices, integrated components · CPC title