Backside CMOS compatible BioFET with no plasma induced damage

Patent metadata

Field	Value
Publication number	US-9080969-B2
Application number	US-201414281100-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	Dec 5, 2012
Publication date	Jul 14, 2015
Grant date	Jul 14, 2015

Abstract

The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

First claim

What is claimed is:

1. A device, comprising:
a carrier substrate;
a first BioFET device attached to the carrier substrate, the first BioFET device including:
a gate structure on a first side of a semiconductor substrate;
a source region and a drain region in the semiconductor substrate adjacent to the gate structure;
a channel region interposing the source and drain regions and underlying the gate structure;
a sensing film directly on and covering at least a portion of th…

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Liu Yi-Shao
• Cheng Chun-Ren
• Chen Ching-Ray
• Chang Yi-Hsien
• Lai Fei-Lung
• Cheng Chun-Wen

Classifications

• H10P50/282

  Electricity · mapped topic

• G01N27/4145 Primary

  Physics · mapped topic

• G01N27/4148

  Physics · mapped topic

• H10D30/021

  Electricity · mapped topic

• H10D84/83

  Electricity · mapped topic