Method and apparatus for filling gap using atomic layer deposition

Patent metadata

Field	Value
Publication number	US-12312686-B2
Application number	US-202117336773-A
Country	US
Kind code	B2
Filing date	Jun 2, 2021
Priority date	Jun 19, 2020
Publication date	May 27, 2025
Grant date	May 27, 2025

Abstract

A method and an apparatus for filling a gap by using an atomic layer deposition (ALD) method are provided. The method includes forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap, and forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap. The reaction inhibitor includes a precursor material that does not react with a second reactant. The first reaction inhibition layer may have a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap. The forming the first atomic layer includes adsorbing the second reactant onto the first precursor layer.

First claim

What is claimed is:

1. A method of filling a gap formed on a substrate using atomic layer deposition (ALD), the method comprising:
forming a first reaction inhibition layer by adsorbing a reaction inhibitor onto a side wall of the gap, the reaction inhibitor including a precursor material that does not react with a second reactant, and the first reaction inhibition layer having a density gradient in which a density of the reaction inhibitor decreases toward a bottom of the gap;
forming a first precursor layer by adsorbing a first reactant onto the bottom of the gap and the side wall of the gap around the bottom of the gap; and
forming a first atomic layer on the bottom of the gap and the side wall of the gap around the bottom of the gap, the forming the first atomic layer including adsorbing the second reactant onto the first precursor layer, wherein the reaction inhibitor includes a center metal and a cyclopentadienyl (Cp) ligand, the center metal and a pentamethyl cyclopentadienyl (Cp*) ligand, Hf( t BuO) 4 , Hf(O i Pr) 4 , or Hf(O t Bu)(NEtMe) 3 .

2. The method of claim 1 , wherein
the density gradient of the first reaction inhibition layer is determined according to a following equation:

l
=

4
⁢
w

3

⁢

(

1
+

3
8

⁢

(

P
⁢
t

S
⁢

2
⁢
π
⁢

⁢
m
⁢

⁢
kT

)

-
1

)

where indicates a depth (nm) of a location of the side wall of the gap, onto which the reaction inhibitor is adsorbed,
w indicates a width (nm) of the gap,
P indicates a partial pressure (Pa) of the reaction inhibitor in a reaction chamber,
t indicates an exposure time (s) of the reaction inhibitor,
m indicates a molecular mass (kg) of the reaction inhibitor,
S indicates a saturation dose of about 2.5×10 18 molecules*meter,
k indicates a Boltzmann factor 1.38×10 23 J/K, and
T indicates a temperature (K) in the reaction chamber.

3. The method of claim 1 , wherein the reaction inhibitor is oxidized by O 3 or an O 2 plasma.

4. The method of claim 1 , further comprising:
converting the reaction inhibitor into a material of the first atomic layer via O 3 or O 2 plasma processing.

5. The method of claim 1 , wherein the reaction inhibitor does not react with H 2 O or O 2 .

6. The method of claim 1 , wherein the reaction inhibitor includes the center metal and the Cp ligand.

7. The method of claim 1 , wherein the reaction inhibitor includes the center metal and the Cp* ligand.

8. The method of claim 1 , wherein the reaction inhibitor includes TiCp*(OMe) 3 , Ti(CpMe)(O i Pr) 3 , Ti(CpMe)(NMe 2 ) 3 , ZrCp(NMe 2 ) 3 ZrCp 2 Cl 2 , Zr(Cp 2 CMe 2 )Me 2 , Zr(Cp 2 CMe 2 )Me(OMe), HfCp(NMe 2 ) 3 , or Hf(CpMe)(NMe 2 ) 3 .

9. The method of claim 1 , wherein the reaction inhibitor has a same center metal as a metal of the first reactant.

10. The method of claim 1 , wherein the first reactant includes TiCl 4 , Ti(O i Pr) 4 , Ti(NMe 2 ) 4 , Ti(NMeEt) 4 , Ti(NEt 2 ) 4 , ZrCl 4 , Zr(NMe 2 ) 4 , Zr(O t Bu) 4 , ZrCp 2 Me 2 , Zr(MeCp) 2 (OMe)Me, HfCl 4 , Hf(NMe 2 ) 4 , Hf(NEtMe) 4 , Hf(NEt 2 ) 4 , HfCp2Me 2 , or Hf(MeCp) 2 (OMe)Me.

11. The method of claim 1 , wherein the second reactant includes H 2 O or O 2 .

12. The method of claim 1 , wherein an average density of the reaction inhibitor increases as a partial pressure of the reaction inhibitor in a reaction chamber increases.

13. The method of claim 1 , wherein the adsorbing the reaction inhibitor is repeatedly performed for a plurality of cycles, and an average density of the reaction inhibitor increases as a number of cycles increases.

14. The method of claim 1 , further comprising:
forming a first filling layer by repeatedly performing the forming the first precursor layer and the forming the first atomic layer for a plurality of cycles, wherein
the first filling layer and the first reactant include a same metal.

15. The method of claim 14 , wherein the density of the reaction inhibitor decreases toward the bottom of the gap so that the first filling layer is formed in a bottom-up direction from the bottom of the gap.

16. The method of claim 15 , wherein the first filling layer is formed to have a shape varying according to an average density of the reaction inhibitor.

17. The method of claim 16 , wherein the first filling layer has the shape in which the first filling layer is formed a bottom-up direction from the bottom of the gap.

18. The method of claim 16 , wherein the first filling layer has the shape in which the first filling layer is formed from the bottom of the gap and the side wall of the gap around the bottom of the gap.

19. The method of claim 16 , wherein a gap filling process time is adjusted according to the shape in which the first filling layer is formed.

20. The method of claim 14 , further comprising:
forming a second reaction inhibition layer on the side wall of the gap after the forming the first filling layer;
forming a second precursor layer on an upper surface of the first filling layer and the side wall of the gap around the upper surface of the first filling layer; and
forming a second atomic layer on the upper surface of the first filling layer and the side wall of the gap around the upper surface of the first filling layer.

21. The method of claim 20 , further comprising:
forming a second filling layer in a bottom-up direction from the upper surface of the first filling layer, by repeatedly performing the forming the second precursor layer and the forming the second atomic layer for a plurality of cycles.

Assignees

• Samsung Electronics Co Ltd
• Univ Nat Incheon Res & Business Found

Inventors

• Cho Eunhyoung
• Lee Hanboram
• Lee Sunghee
• Lee Jeongyub
• Nguyen Chi Thang

Classifications

• H10W20/098

  by filling between adjacent conductive parts · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/4554

  Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/402

  Silicon dioxide · CPC title