Phase change memory gaps

Patent metadata

Field	Value
Publication number	US-12310263-B2
Application number	US-202117528197-A
Country	US
Kind code	B2
Filing date	Nov 17, 2021
Priority date	Nov 17, 2021
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

A PCM cell includes a first electrode, a heater/PCM portion electrically connected to first electrode, the heater/PCM portion comprising a PCM material, a second electrode electrically connected to the PCM material, and an electrical insulator stack surrounding the projection liner. The stack includes a plurality of first layers comprised of a first material and having a plurality of first inner sides facing towards the projection liner, and a plurality of second layers alternating with the plurality of first layers, the plurality of second layers comprised of a second material that is different from the first material, and the second plurality of layers having a plurality of second inner sides facing towards the projection liner. The plurality of second inner sides that are offset from the plurality of first inner sides forming a plurality of gaps.

First claim

What is claimed is:

1. A phase change
memory (PCM) cell comprising: a first
electrode;
a heater/PCM portion electrically connected to first electrode, the heater/PCM portion comprising a PCM material;
a second electrode electrically connected to the PCM material; and
an electrical insulator stack surrounding at least some of the heater/PCM portion, the stack comprising:
a plurality of first layers comprised of a first material and having a plurality of first inner sides facing towards the heater/PCM portion; and
a plurality of second layers alternating with the plurality of first layers, the plurality of second layers comprised of a second material that is different from the first material, and the second plurality of layers having a plurality of second inner sides facing towards the heater/PCM portion;
wherein the plurality of second inner sides that are offset from the plurality of first inner sides forming a plurality of gaps.

2. The PCM cell of claim 1 , further comprising a projection liner that is in direct contact with the first electrode, the second electrode, and the PCM material.

3. The PCM cell of claim 2 , further comprising a wall in direct contact with the projection liner and the stack.

4. The PCM cell of claim 3 , wherein each of the plurality of gaps is bounded by two of the plurality of first layers, one of the plurality of second layers, and the wall.

5. The PCM cell of claim 3 , wherein:
the plurality of first layers is in direct contact with the wall; and
the plurality of second layers is spaced apart from the wall.

6. The PCM cell of claim 3 , wherein each gap is further bounded by the wall.

7. The PCM cell of claim 1 , wherein:
the first material is resistant to a material removal process;
and the second material is susceptible to the material
removal process.

8. The PCM cell of claim 1 , wherein the heater/PCM portion further comprises a heater that is separate from the PCM material and is comprised of a high electrical resistance material.

9. A method of manufacturing a phase change memory (PCM) cell, the method comprising: forming a first electrode;
forming an electrical insulator stack on the first electrode, wherein the stack comprises: a plurality of first layers comprised of a first material; and
a plurality of second layers alternating with the plurality of first layers, the plurality of second layers comprised of a second material that is different from the first material;

forming a via in the stack;
removing portions of the plurality of second layers from the via while leaving the plurality of first layers intact;
forming a wall in the via on the plurality of first layers, which creates a plurality of gaps; forming a heater/PCM portion inside the wall; and
forming a second electrode on the heater/PCM portion.

10. The method of claim 9 , wherein each of the plurality of gaps is bounded by two of the plurality of first layers, one of the plurality of second layers, and the wall.

11. The method of claim 9 , further comprising:
forming a projection liner on the first electrode and the wall prior to forming the heater/PCM portion such that the projection liner is positioned between the wall and the heater/PCM portion.

12. The method of claim 9 , wherein forming the heater/PCM portion inside the wall comprises depositing a PCM material inside the wall and on the stack.

13. The method of claim 9 , wherein forming the heater/PCM portion inside the wall comprises: depositing a high electrical resistance material inside the wall and on the stack to form a
heater; and
depositing a PCM material on the heater and on the stack.

14. A phase change
memory (PCM) cell comprising: a first
electrode;
a heater/PCM portion electrically connected to first electrode, the heater/PCM portion comprising a PCM material;
a second electrode electrically connected to the PCM material; and
an electrical insulator stack surrounding the a portion of the heater/PCM portion, the stack comprising a plurality of first layers and a plurality of second layers alternating with the plurality of first layers, the stack defining a plurality of gaps, wherein each of the gaps:
has a toroidal shape;
is axially spaced apart from each other gap;
and is bounded by two of the plurality of first layers and one of the plurality of second layers.

15. The PCM cell of claim 14 , further comprising a projection liner that is in direct contact with the first electrode, the second electrode, and the PCM material.

16. The PCM cell of claim 15 , further comprising a wall in direct contact with the projection liner and the stack.

17. The PCM cell of claim 16 , wherein each gap is further bounded by the wall.

18. The PCM cell of claim 17 , wherein each gap surrounds a portion of the wall.

19. The PCM cell of claim 14 , wherein the heater/PCM portion further comprises a heater that is separate from the PCM material and is comprised of a high electrical resistance material.

Assignees

• IBM

Inventors

• Ok Injo
• Seo Soon-Cheon
• Reznicek Alexander
• Gluschenkov Oleg

Classifications

• H10N70/841

  Electrodes · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10N70/8613

  Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel · CPC title

• H10B63/00

  Resistance change memory devices, e.g. resistive RAM [ReRAM] devices · CPC title

• H10N70/8616

  Thermal insulation means · CPC title