Diffusion barrier layer on interconnection vias for magnetic tunnel junctions

Patent metadata

Field	Value
Publication number	US-12310248-B2
Application number	US-202218148829-A
Country	US
Kind code	B2
Filing date	Dec 30, 2022
Priority date	Jun 27, 2018
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer.

First claim

What is claimed is:

1. A method, comprising:
forming a dielectric layer with an opening;
depositing a barrier layer in the opening;
depositing a conductive layer on the barrier layer;
forming a capping layer without performing a vacuum break between depositing the conductive layer and forming the capping layer, wherein forming the capping layer comprises forming the capping layer with a first portion in the conductive layer and surrounded by the barrier layer and a second portion protruding above top surfaces of the barrier layer and the dielectric layer; and
forming an electrode on the top surfaces of the barrier layer and the dielectric layer and surrounding the second portion of the capping layer.

2. The method of claim 1 , further comprising depositing an anti-reflective coating on the dielectric layer prior to forming the opening in the dielectric layer.

3. The method of claim 2 , further comprising removing the anti-reflective coating prior to forming the capping layer.

4. The method of claim 1 , wherein depositing the barrier layer comprises depositing a cobalt layer.

5. The method of claim 1 , wherein forming the dielectric layer comprises:
depositing a nitride layer; and
depositing a low-k dielectric layer on the nitride layer.

6. The method of claim 1 , wherein forming the capping layer comprises forming a cobalt layer or a ruthenium layer.

7. The method of claim 1 , wherein forming the capping layer comprises:
depositing a metal precursor layer on the conductive layer; and
exposing the metal precursor layer to a plasma comprising argon, hydrogen, nitrogen, or ammonia.

8. The method of claim 1 , wherein forming the capping layer comprises depositing a precursor layer on the conductive layer at a temperature between about 100° C. and about 500° C.

9. The method of claim 1 , further comprising forming a magnetic tunnel junction (MTJ) stack on the electrode.

10. The method of claim 1 , wherein depositing the conductive layer comprises depositing a copper layer or a copper-alloy layer to fill the opening.

11. A method, comprising:
forming a dielectric layer on a substrate;
forming an opening in the dielectric layer;
depositing, in the opening, a metal layer;
forming a doped metal nitride layer on the metal layer;
depositing a conductive layer on the doped metal nitride layer; and
forming a magnetic tunnel junction (MTJ) structure on the metal layer and the doped metal nitride layer.

12. The method of claim 11 , further comprising depositing an anti-reflective coating on the dielectric layer prior to forming the opening.

13. The method of claim 12 , further comprising removing the anti-reflective coating prior to forming the MTJ structure.

14. The method of claim 11 , wherein depositing the conductive layer comprises depositing a copper-free metal.

15. The method of claim 11 , wherein depositing the conductive layer comprises depositing a tungsten layer.

16. The method of claim 11 , wherein forming the doped metal nitride layer comprises doping the metal nitride layer with fluorine, oxygen, nitrogen, chlorine, silicon, carbon, arsenic, germanium, or cobalt dopants.

17. A structure, comprising:
an interconnect layer, disposed on a substrate, comprising:
a dielectric layer disposed on the substrate,
a metal layer disposed in the dielectric layer,
a doped metal nitride layer disposed on the metal layer, and
a conductive layer disposed on the doped metal nitride layer; and

a magnetic tunnel junction (MTJ) structure disposed on the conductive layer.

18. The structure of claim 17 , wherein the conductive layer comprises a copper-free metal.

19. The structure of claim 17 , wherein the doped metal nitride layer comprises fluorine, oxygen, nitrogen, chlorine, silicon, carbon, arsenic, germanium, or cobalt dopants.

20. The structure of claim 17 , wherein the MTJ structure is disposed on the metal layer and the doped metal nitride layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Wu Jung-Tang
• Ho Jui-Hung
• Lee Chin-Szu
• Wu Meng-Yu
• Wu Szu-Hua

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/038

  covering conductive structures (H10W20/037 takes precedence) · CPC title

• H10W20/037 Primary

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title