Block family-based error avoidance for memory devices

Patent metadata

Field	Value
Publication number	US-12307111-B2
Application number	US-202318526634-A
Country	US
Kind code	B2
Filing date	Dec 1, 2023
Priority date	Dec 19, 2019
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with a memory device; initialize a timeout associated with the block family; initializing a low temperature and a high temperature using a reference temperature at the memory device; responsive to programming a block residing on the memory device, associate the block with the block family; and responsive to at least one of: detecting expiration of the timeout or determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the block family.

First claim

What is claimed is:

1. A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device to:
associate, with a first threshold voltage offset bin, a current block family associated with the memory device;
responsive to programming a first block residing on the memory device, associate the first block with the current block family;
associate the current block family with a second threshold voltage offset bin; and
read, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.

2. The system of claim 1 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.

3. The system of claim 2 , wherein the block family metadata comprises a first table including a plurality of records, wherein a record of the plurality of records associates the first block with the current block family.

4. The system of claim 2 , wherein the block family metadata comprises a second table including a plurality of records, wherein each record of the plurality of records associates a plurality of dies of the current block family with respective threshold voltage offset bins.

5. The system of claim 2 , wherein the block family metadata comprises a third table including a plurality of records, wherein each record of the plurality of records associates a corresponding threshold voltage offset bin with one or more threshold voltages to be applied to respective base voltage read levels for performing read operations.

6. The system of claim 1 , wherein the processing device is further to:
initialize a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the current block family.

7. The system of claim 6 , wherein the processing device is further to:
receive a second reference temperature of the current block family;
responsive to determining that the second reference temperature is greater than or equal to the high temperature, update the high temperature to store the second reference temperature; and
responsive to determining that the second reference temperature falls below the low temperature, update the low temperature to store the second reference temperature.

8. The system of claim 6 , wherein the processing device is further to:
responsive to closing the current block family, initialize a new block family.

9. The system of claim 1 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.

10. A method, comprising:
associating, by a processing device, with a first threshold voltage offset bin, a current block family associated with a memory device;
responsive to programming a first block residing on the memory device, associating the first block with the current block family;
associating the current block family with a second threshold voltage offset bin; and
reading, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.

11. The method of claim 10 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.

12. The method of claim 10 , further comprising:
initializing a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, closing the current block family.

13. The method of claim 12 , further comprising:
responsive to closing the current block family, initializing a new block family.

14. The method of claim 10 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.

15. A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to:
associate, with a first threshold voltage offset bin, a current block family associated with a memory device;
responsive to programming a first block residing on the memory device, associate the first block with the current block family;
associate the current block family with a second threshold voltage offset bin; and
read, using a threshold voltage offset associated with the second threshold voltage offset bin, data from a second block of the current block family.

16. The computer-readable non-transitory storage medium of claim 15 , wherein associating the block with the current block family further comprises:
appending, to block family metadata, a record associating the first block with the current block family.

17. The computer-readable non-transitory storage medium of claim 15 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
initialize a low temperature and a high temperature using a reference temperature at the memory device;
responsive to determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the current block family.

18. The computer-readable non-transitory storage medium of claim 17 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
receive a second reference temperature of the current block family;
responsive to determining that the second reference temperature is greater than or equal to the high temperature, update the high temperature to store the second reference temperature; and
responsive to determining that the second reference temperature falls below the low temperature, update the low temperature to store the second reference temperature.

19. The computer-readable non-transitory storage medium of claim 17 , further comprising executable instructions that, when executed by the processing device, cause the processing device to:
responsive to closing the current block family, initialize a new block family.

20. The computer-readable non-transitory storage medium of claim 15 , wherein the current block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.

Assignees

• Micron Technology Inc

Inventors

• Sheperek Michael
• Muchherla Kishore Kumar
• Kaynak Mustafa N
• Rayaprolu Vamsi Pavan
• Liikanen Bruce A
• Feeley Peter
• Koudele Larry J
• Nowell Shane
• Kientz Steven Michael

Classifications

• G06F3/0673

  Single storage device · CPC title

• G06F2212/1041

  Resource optimization · CPC title

• G11C16/26 Primary

  Sensing or reading circuits; Data output circuits · CPC title

• G06F12/10

  Address translation · CPC title

• G11C16/0483

  comprising cells having several storage transistors connected in series · CPC title