Colloidal ternary group III-V nanocrystals synthesized in molten salts

Patent metadata

Field	Value
Publication number	US-12304829-B2
Application number	US-202217567499-A
Country	US
Kind code	B2
Filing date	Jan 3, 2022
Priority date	Jun 26, 2018
Publication date	May 20, 2025
Grant date	May 20, 2025

Abstract

Methods of synthesizing colloidal ternary Group III-V nanocrystals are provided. Also provided are the colloidal ternary Group III-V nanocrystals made using the methods. In the methods, molten inorganic salts are used as high temperature solvents to carry out cation exchange reactions that convert binary nanocrystals into ternary nanocrystals.

First claim

What is claimed is:

1. Core-shell In 1-x Ga x P nanocrystals, each comprising an In 1-x Ga x P core consisting of only In 1-x Ga x P alloy and having a surface, where 0.2≤x≤0.85, and a ZnS shell on the surface of the In 1-x Ga x P core, wherein the core-shell In 1-x Ga x P nanocrystals absorb blue light and emit green or red photoluminescence, the green or red photoluminescence characterized by a photoluminescence peak maximum in the range from 490 nm to 640 nm and a photoluminescence peak full-width-half-maximum of 60 nm or lower at a temperature of 25° C.

2. The core-shell In 1-x Ga x P nanocrystals of claim 1 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

3. The core-shell In 1-x Ga x P nanocrystals of claim 2 , having a photoluminescence quantum yield at 25° C. in the range from 30% to 46%, wherein 0.4≤x≤0.85.

4. The core-shell In 1-x Ga x P nanocrystals of claim 1 , wherein the In 1-x Ga x P nanocrystals emit the green photoluminescence characterized by a photoluminescence peak maximum in the range from 500 nm to 600 nm.

5. The core-shell In 1-x Ga x P nanocrystals of claim 4 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

6. The core-shell In 1-x Ga x P nanocrystals of claim 5 , wherein the core-shell In 1-x Ga x P nanocrystals have a photoluminescence quantum yield at 25° C. in the range from 30% to 46% and 0.4≤x≤0.85.

7. The core-shell In 1-x Ga x P nanocrystals of claim 1 , having a photoluminescence quantum yield at 25° C. in the range from 30% to 46%.

8. The core-shell In 1-x Ga x P nanocrystals of claim 1 , wherein 0.4≤x≤0.85.

9. A method of generating light, the method comprising irradiating core-shell In 1-x Ga x P nanocrystals, where 0.2≤x≤0.85, with blue light, wherein the core-shell In 1-x Ga x P nanocrystals absorb the blue light and emit green or red photoluminescence, the green or red photoluminescence characterized by a photoluminescence peak maximum in the range from 490 nm to 640 nm and a photoluminescence peak full-width-half-maximum of 60 nm or lower at a temperature of 25° C., and further wherein each core-shell In 1-x Ga x P nanocrystal comprises an In 1-x Ga x P core consisting of only In 1-x Ga x P alloy and having a surface and a ZnS shell on the surface of the In 1-x Ga x P core.

10. The method of claim 9 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

11. The method of claim 9 , wherein the core-shell In 1-x Ga x P nanocrystals emit the green photoluminescence characterized by a photoluminescence peak maximum in the range from 500 nm to 600 nm.

12. The method of claim 11 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

13. The method of claim 9 , wherein the core-shell In 1-x Ga x P nanocrystals have a photoluminescence quantum yield at 25° C. in the range from 30% to 46%.

14. The method of claim 9 , wherein 0.4≤x≤0.85.

15. Core-shell In 1-x Ga x P nanocrystals, each comprising an In 1-x Ga x P core having a surface, where 0.4≤x≤0.85, and a ZnS shell around the In 1-x Ga x P core, wherein the ZnS shell is in contact with the surface of the In 1-x Ga x P core where it is present around said core, and further wherein the core-shell In 1-x Ga x P nanocrystals absorb blue light and emit green or red photoluminescence, the green or red photoluminescence characterized by a photoluminescence peak maximum in the range from 490 nm to 640 nm and a photoluminescence peak full-width-half-maximum of 60 nm or lower at a temperature of 25° C.

16. The core-shell In 1-x Ga x P nanocrystals of claim 15 , wherein the core-shell In 1-x Ga x P nanocrystals have a photoluminescence quantum yield at 25° C. in the range from 30% to 46%.

17. The core-shell In 1-x Ga x P nanocrystals of claim 15 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

18. A method of generating light, the method comprising irradiating core-shell In 1-x Ga x P nanocrystals, where 0.4≤x≤0.85, with blue light, wherein the core-shell In 1-x Ga x P nanocrystals absorb the blue light and emit green or red photoluminescence, the green or red photoluminescence characterized by a photoluminescence peak maximum in the range from 490 nm to 640 nm and a photoluminescence peak full-width-half-maximum of 60 nm or lower at a temperature of 25° C., and further wherein each core-shell In 1-x Ga x P nanocrystal comprises an In 1-x Ga x P core having a surface and a ZnS shell around the In 1-x Ga x P core, wherein the ZnS shell is in contact with the surface of the In 1-x Ga x P core where it is present around said core.

19. The method of claim 18 , wherein the core-shell In 1-x Ga x P nanocrystals have a photoluminescence quantum yield at 25° C. in the range from 30% to 46%.

20. The method of claim 18 , wherein the photoluminescence peak full-width-half-maximum is 50 nm or lower.

Assignees

• Univ Chicago

Inventors

• Talapin Dmitri V
• Srivastava Vishwas

Classifications

• C01P2004/04

  obtained by TEM, STEM, STM or AFM · CPC title

• C01P2002/82

  by IR- or Raman-data · CPC title

• C01P2002/01

  depicted by a TEM-image · CPC title

• C01P2004/64

  Nanometer sized, i.e. from 1-100 nanometer · CPC title

• C01P2006/60

  Optical properties, e.g. expressed in CIELAB-values · CPC title