Modifying hydrophobicity of a wafer surface using an organosilicon precursor

Patent metadata

Field	Value
Publication number	US-12288685-B2
Application number	US-201917045629-A
Country	US
Kind code	B2
Filing date	Apr 8, 2019
Priority date	Apr 9, 2018
Publication date	Apr 29, 2025
Grant date	Apr 29, 2025

Abstract

Methods and apparatuses for modifying a wafer surface using an organosilicon precursor are provided herein. The wafer surface is dosed with the organosilicon precursor following deposition of a dielectric material by an atomic layer deposition (ALD) process. In some implementations, the dielectric layer is made of silicon oxide. Dosing the wafer surface with the organosilicon precursor may occur in the same chamber as the ALD process. The organosilicon precursor may modify the wafer surface to increase its hydrophobicity so that photoresist adhesion is improved on the wafer surface. In some implementations, the wafer surface may be exposed to an inert gas RF plasma after dosing the wafer surface with the organosilicon precursor.

First claim

What is claimed is:

1. A method for increasing hydrophobicity of a wafer surface, the method comprising:
depositing a silicon-containing layer on a wafer by atomic layer deposition (ALD); and
introducing a dose of an organosilicon precursor in a vapor phase onto a wafer surface to increase a hydrophobicity of the wafer surface; and
exposing, after introducing the dose of the organosilicon precursor, the wafer to an RF plasma, wherein the RF plasma is an inert gas plasma, wherein conditions associated with the inert gas plasma modulates the hydrophobicity of the wafer surface.

2. The method of claim 1 ,
wherein an RF power applied to the RF plasma is between 100 W and 500 W.

3. The method of claim 2 , wherein a chamber pressure when exposing the wafer to the RF plasma is between about 0.5 Torr and about 5 Torr, and wherein an exposure time when exposing the wafer to the RF plasma is between about 0.25 seconds and about 50 seconds.

4. The method of claim 1 , wherein depositing the silicon-containing layer by ALD comprises:
introducing a dose of a silicon-containing precursor onto the wafer surface; and
converting the silicon-containing precursor to form an adsorption-limited amount of the silicon-containing layer.

5. The method of claim 1 , further comprising:
transferring the wafer outside of an ALD chamber to a deposition chamber configured to deposit a photoresist on the silicon-containing layer.

6. The method of claim 1 , wherein introducing the dose of the organosilicon precursor comprises adsorbing the organosilicon precursor on the wafer surface without converting the organosilicon precursor in an atomic layer deposition cycle.

7. The method of claim 1 , further comprising:
depositing, before introducing the dose of the organosilicon precursor, a hydrophobic layer on the silicon-containing layer, wherein the hydrophobic layer includes hexamethyldisilazane (HMDS) or polydimethylsiloxane (PDMS).

8. The method of claim 1 , wherein depositing the silicon-containing layer by ALD and introducing the dose of the organosilicon precursor occurs in an ALD chamber without introducing a vacuum break.

9. The method of claim 8 , further comprising:
transferring the wafer outside the ALD chamber to a deposition chamber configured to deposit a photoresist on the silicon-containing layer.

10. The method of claim 1 , further comprising:
depositing, after introducing the dose of the organosilicon precursor, a photoresist on the surface of the silicon-containing layer.

11. The method of claim 1 , wherein a contact angle measurement on the wafer surface after introducing the dose of the organosilicon precursor is equal to or greater than about 40°.

12. The method of claim 1 , wherein the organosilicon precursor includes an aminosilane.

13. The method of claim 1 , wherein the silicon-containing layer includes a silicon nitride, a silicon carbide, a silicon oxide, or combinations thereof.

14. The method of claim 1 , wherein the wafer surface includes a hydrophobic layer on the silicon-containing layer.

Assignees

• Lam Res Corp

Inventors

• Fields Jeremy D
• Gupta Awnish
• Agnew Douglas W
• Abel Joseph R
• Kumar Purushottam

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6532 Primary

  by exposure to a plasma · CPC title

• H10P50/73

  using masks for insulating materials · CPC title