Optoelectronic component, optoelectronic arrangement and method

Patent metadata

Field	Value
Publication number	US-12261256-B2
Application number	US-202017430254-A
Country	US
Kind code	B2
Filing date	Feb 11, 2020
Priority date	Feb 11, 2019
Publication date	Mar 25, 2025
Grant date	Mar 25, 2025

Abstract

The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

First claim

The invention claimed is:

1. Optoelectronic component comprising:
a layer stack of a p-doped layer;
an n-doped layer;
an active region located between the p-doped and n-doped layer;
wherein the layer stack rises above a major surface and the active region is located above a center of the layer stack as viewed from the major surface, wherein the layer stack has a reducing diameter from the major surface; and
a reflective layer over a surface of the layer stack;
in which areas of the active layer adjacent to the reflective layer exhibit quantum well intermixing.

2. Optoelectronic component according to claim 1 , in which the stack of layers comprise the shape of a hemisphere or a paraboloid or an ellipsoid.

3. Optoelectronic component according to claim 1 , in which areas of the active layer adjacent to the reflective layer comprise an increased bandgap.

4. Optoelectronic component according to claim 1 , in which the reflective layer comprises a dielectric between the active region and the layer of the layer stack adjacent to the surface region.

5. Optoelectronic arrangement comprising:
a flat carrier substrate; and
at least one optoelectronic component, one optoelectronic component comprising:
a layer stack of
a p-doped layer;
an n-doped layer; and
an active region located between the p-doped and n-doped layer;

wherein the layer stack rises above a major surface and the active region is located above a center of the layer stack as viewed from the major surface, wherein the layer stack has a reducing diameter from the major surface;
wherein the at least one optoelectronic component is arranged on an assembly side of the carrier substrate;
wherein the optoelectronic component is configured to emit light transverse to a carrier substrate plane in a direction away from the carrier substrate;
a reflector element;
wherein the reflector element is spatially arranged at the assembly side relative to the at least one optoelectronic component and is configured to reflect light emitted by the at least one optoelectronic component in the direction of the carrier substrate;
wherein the carrier substrate is at least partially transparent so that light reflected from the reflector element propagates through the carrier substrate and emerges on a display side of the carrier substrate opposite the assembly side.

6. Optoelectronic arrangement according to claim 5 , wherein a diffuser layer is provided for scattering the light reflected from the at least one optoelectronic component on the side of the reflector element directed towards the at least one optoelectronic component and/or a reflector material comprises diffuser particles.

7. Optoelectronic arrangement according to claim 6 , wherein the diffuser layer and/or the diffuser particles comprise Al2O3 and/or TiO2.

8. Optoelectronic arrangement according to claim 5 , wherein the reflector element surrounds the at least one optoelectronic component in a circular, polygonal or parabolic shape.

9. Optoelectronic arrangement according to claim 5 , wherein the reflector element forms an electrical contact of the at least one optoelectronic component.

10. Optoelectronic arrangement according to claim 5 , wherein the reflector element is configured and shaped such that at least 90% of the light emitted by the at least one optoelectronic component is incident on the assembly side of the carrier substrate at an angle between 45 and 90 degrees relative to the carrier substrate plane.

11. Optoelectronic arrangement according to claim 5 , wherein the at least one optoelectronic component comprises three components surrounded by the reflector element.

12. Optoelectronic arrangement according to claim 11 , in which the at least three components have a contact area on the side facing the reflector element, which is covered with a transparent cover layer for common electrical contact.

13. Optoelectronic arrangement according to claim 5 , wherein the carrier substrate comprises polyamide, transparent plastic, resin or glass.

14. Optoelectronic arrangement according to claim 5 , wherein the reflector element is formed as a reflective layer of the at least one optoelectronic component.

15. Optoelectronic arrangement according to claim 5 , wherein a passivation layer is additionally provided for attenuating or eliminating reflections of the light at mesa edges of the at least one optoelectronic component.

16. Optoelectronic arrangement according to claim 5 , wherein a light-absorbing coating is provided on the assembly side and/or the display side of the carrier substrate outside the reflector element.

17. Optoelectronic arrangement according to claim 5 , wherein the display side of the carrier substrate has an uneven and/or roughened structure.

18. Optoelectronic arrangement according to claim 5 ,
wherein a colour filter element is arranged on the display side of the carrier substrate opposite the reflector element;
wherein the colour filter element allows a primary colour spectrum of the at least one optoelectronic component to pass and attenuates deviating colour spectra.

19. Optoelectronic arrangement according to claim 5 , in which a light-shaping structure, in particular a photonic structure with features according to any one of the following items, is incorporated in the carrier substrate, which comprises first and second regions with different refractive indices.

20. Optoelectronic arrangement according to claim 5 , wherein a light-shaping and/or light-converting structure is arranged on the display side of the carrier substrate, which structure comprises first and second regions.

21. Optoelectronic arrangement according to claim 20 , wherein first regions comprise a converter material.

22. Optoelectronic arrangement according to claim 5 , comprising a converter material surrounding the at least one optoelectronic component and filling the space between the optoelectronic component and the reflector material.

23. Optoelectronic arrangement according to claim 5 , comprising a converter material on the display side of the carrier substrate.

24. Display arrangement, in particular video wall, comprising a plurality of optoelectronic arrangements each according to claim 5 .

25. Motor vehicle lighting means with an optoelectronic arrangement according to claim 5 .

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Halbritter Hubert
• Lang Erwin
• Stolz Julia
• Rausch Andreas
• Schwalenberg Simon

Classifications

• H10W90/00

  Package configurations · CPC title

• H10H20/851

  Wavelength conversion means · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H29/10

  Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) · CPC title

• H10H20/856 Primary

  Reflecting means · CPC title