Power amplifier circuit

Patent metadata

Field	Value
Publication number	US-12244276-B2
Application number	US-202217656284-A
Country	US
Kind code	B2
Filing date	Mar 24, 2022
Priority date	Mar 26, 2021
Publication date	Mar 4, 2025
Grant date	Mar 4, 2025

Abstract

A power amplifier circuit includes an amplifier transistor that amplifies a radio-frequency signal and outputs the radio-frequency signal, and a bias circuit that supplies a bias current to a base of the amplifier transistor. The bias circuit includes a bias current supply transistor, and an electrostatic capacity circuit whose electrostatic capacity varies in accordance with a temperature of the amplifier transistor and that is charged in a non-supply period during which the bias current is not supplied and discharges to a supply path for the bias current in a supply period during which the bias current is supplied. The supply period during which the bias current is supplied includes an amplification period during which the radio-frequency signal is amplified by the amplifier transistor. The bias current starts to be supplied before the amplifier transistor starts amplification.

First claim

What is claimed is:

1. A power amplifier circuit comprising:
an amplifier transistor configured to amplify a radio-frequency signal and to output an amplified radio-frequency signal; and
a bias circuit configured to supply a bias current to a base of the amplifier transistor, the bias circuit comprising:
a bias current supply transistor, and
an electrostatic capacity circuit whose electrostatic capacity varies in accordance with a temperature of the amplifier transistor, that is configured to charge during a non-supply period during which the bias current is not supplied, and that is configured to discharge to a bias current supply path during a supply period during which the bias current is supplied,

wherein the supply period during which the bias current is supplied includes an amplification period during which the radio-frequency signal is amplified by the amplifier transistor, and
wherein the supply period begins before the amplification period begins.

2. The power amplifier circuit according to claim 1 , wherein the electrostatic capacity circuit comprises:
a first capacitor between the supply path for the bias current and a reference potential, and
a second capacitor configured to be connected in parallel with the first capacitor when the temperature of the amplifier transistor is less than a predetermined threshold value, and configured to be disconnected from the first capacitor when the temperature of the amplifier transistor is not less than the predetermined threshold value.

3. The power amplifier circuit according to claim 1 , wherein the electrostatic capacity circuit comprises:
a variable capacitor whose capacitance value varies in accordance with the temperature of the amplifier transistor.

4. The power amplifier circuit according to claim 2 , wherein the electrostatic capacity circuit comprises:
a thermistor whose resistance value varies in accordance with the temperature of the amplifier transistor.

5. The power amplifier circuit according to claim 3 , wherein the electrostatic capacity circuit comprises:
a thermistor whose resistance value varies in accordance with the temperature of the amplifier transistor.

6. A power amplifier circuit comprising:
an amplifier transistor configured to amplify a radio-frequency signal and to output an amplified radio-frequency signal; and
a bias circuit configured to supply a bias current to a base of the amplifier transistor, the bias circuit comprising:
a bias current supply transistor,
a temperature compensation diode connected in series between a base of the bias current supply transistor and a reference potential, and
a first thermistor whose resistance value varies in accordance with a temperature of the amplifier transistor, and that is connected in series with the temperature compensation diode,

wherein a supply period during which the bias current is supplied includes an amplification period during which the radio-frequency signal is amplified by the amplifier transistor, and
wherein the supply period begins before the amplification period begins.

7. The power amplifier circuit according to claim 6 , wherein the bias circuit further comprises:
an electrostatic capacity circuit whose electrostatic capacity varies in accordance with the temperature of the amplifier transistor, that is configured to charge during a non-supply period during which the bias current is not supplied, and that is configured to discharge to the base of the bias current supply transistor during the supply period during which the bias current is supplied.

8. The power amplifier circuit according to claim 7 , wherein the electrostatic capacity circuit comprises:
a first capacitor between the base of the bias current supply transistor and the reference potential, and
a second capacitor configured to be connected in parallel with the first capacitor when the temperature of the amplifier transistor is less than a predetermined threshold value, and configured to be disconnected from the first capacitor when the temperature of the amplifier transistor is not less than the predetermined threshold value.

9. The power amplifier circuit according to claim 7 , wherein the electrostatic capacity circuit comprises:
a variable capacitor whose capacitance value varies in accordance with the temperature of the amplifier transistor.

10. The power amplifier circuit according to claim 8 , wherein the electrostatic capacity circuit comprises:
a second thermistor whose resistance value varies in accordance with the temperature of the amplifier transistor.

11. The power amplifier circuit according to claim 9 , wherein the electrostatic capacity circuit comprises:
a second thermistor whose resistance value varies in accordance with the temperature of the amplifier transistor.

12. The power amplifier circuit according to claim 1 , wherein a power supply potential applied when the electrostatic capacity circuit is charged is greater than a power supply potential supplied to the bias current supply transistor.

13. The power amplifier circuit according to claim 7 , wherein a power supply potential applied when the electrostatic capacity circuit is charged is greater than a power supply potential supplied to the bias current supply transistor.

Assignees

• Murata Manufacturing Co

Inventors

• Takezono Naofumi
• Maruyama Masashi

Classifications

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F2200/522

  the bias or supply voltage or current of the gate side of a FET amplifier being controlled to be on or off by a switch · CPC title

• H03F2200/447

  the amplifier being protected to temperature influence · CPC title

• H03F2200/42

  the input to the amplifier being made by capacitive coupling means · CPC title

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title