Display apparatus

Patent metadata

Field	Value
Publication number	US-12238971-B2
Application number	US-202318528652-A
Country	US
Kind code	B2
Filing date	Dec 4, 2023
Priority date	Dec 18, 2020
Publication date	Feb 25, 2025
Grant date	Feb 25, 2025

Abstract

A display apparatus includes a substrate including a display area in which a display element is arranged, a first thin-film transistor arranged in the display area and including a first semiconductor layer and a first gate electrode insulated from the first semiconductor layer, the first semiconductor layer including a silicon semiconductor, a first interlayer insulating layer covering the first gate electrode, a second thin-film transistor on the first interlayer insulating layer and including a second semiconductor layer and a second gate electrode insulated from the second semiconductor layer, the second semiconductor layer including an oxide semiconductor, and an upper electrode arranged on the first interlayer insulating layer and including a same material as that of the second semiconductor layer and at least overlapping the first gate electrode.

First claim

What is claimed is:

1. A display apparatus comprising:
a substrate;
a first semiconductor layer on the substrate and including a silicon semiconductor;
a first gate electrode insulated from the first semiconductor layer and overlapping the first semiconductor layer;
a first interlayer insulating layer on the first gate electrode;
a second semiconductor layer on the first interlayer insulating layer and including an oxide semiconductor, wherein a part of the second semiconductor layer overlaps a part of the first semiconductor layer without being in direct contact with the part of the first semiconductor layer;
a second gate electrode on the second semiconductor layer and insulated from a part of the second semiconductor layer; and
a capacitor comprising a first electrode which is a part of the first gate electrode and overlaps the first semiconductor layer and a second electrode overlapping the first electrode, wherein the second electrode comprises a same material as that of the second semiconductor layer.

2. The display apparatus of claim 1 , further comprising a lower gate electrode arranged in a same layer as the first gate electrode and overlapped with the second semiconductor layer.

3. The display apparatus of claim 2 , wherein the lower gate electrode is opposite to the second gate electrode with a part of the second semiconductor layer therebetween in direction perpendicular to a top surface of the substrate.

4. The display apparatus of claim 1 , further comprising a first gate insulating layer interposed between the first semiconductor layer and the first gate electrode.

5. The display apparatus of claim 1 , further comprising a second gate insulating layer interposed between the second semiconductor layer and the second gate electrode.

6. The display apparatus of claim 1 , further comprising a second interlayer insulating layer on the second gate electrode.

7. The display apparatus of claim 6 , further comprising an electrode on the second interlayer insulating layer and overlapping the first electrode or the second electrode of the capacitor.

8. The display apparatus of claim 7 , wherein the electrode is electrically connected to the second electrode of the capacitor.

9. The display apparatus of claim 1 , each of the first gate electrode and the second gate electrode comprises at least one selected from aluminum (Al), platinum (Pt), and palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).

10. The display apparatus of claim 1 , wherein the second semiconductor layer comprises In—Ga—Zn—O (IGZO), In—Sn—Zn—O (ITZO) or In—Ga—Sn—Zn—O (IGTZO).

11. A display apparatus comprising:
a substrate;
a silicon semiconductor layer on the substrate and including a polycrystalline silicon;
a first gate electrode insulated from the silicon semiconductor layer and overlapping the silicon semiconductor layer;
a first interlayer insulating layer on the first gate electrode;
an oxide semiconductor layer on the first interlayer insulating layer, wherein a part of the oxide semiconductor layer overlaps a part of the silicon semiconductor layer without being in direct contact with the part of the silicon semiconductor layer;
a second gate electrode on the oxide semiconductor layer and insulated from the oxide semiconductor layer; and
an electrode overlapping the first gate electrode, wherein the electrode comprises a same material as that of the oxide semiconductor layer.

12. The display apparatus of claim 11 , further comprising a lower gate electrode arranged in a same layer as the first gate electrode and overlapped with the oxide semiconductor layer.

13. The display apparatus of claim 12 , wherein the lower gate electrode is opposite to the second gate electrode with a part of the oxide semiconductor layer therebetween in direction perpendicular to a top surface of the substrate.

14. The display apparatus of claim 11 , further comprising a first gate insulating layer interposed between the silicon semiconductor layer and the first gate electrode.

15. The display apparatus of claim 11 , further comprising a second gate insulating layer interposed between the oxide semiconductor layer and the second gate electrode.

16. The display apparatus of claim 11 further comprising a second interlayer insulating layer on the second gate electrode.

17. The display apparatus of claim 16 , further comprising a second electrode on the second interlayer insulating layer and overlapping the electrode.

18. The display apparatus of claim 17 , wherein the second electrode is electrically connected to the electrode.

19. The display apparatus of claim 11 , each of the first gate electrode and the second gate electrode comprises at least one selected from aluminum (Al), platinum (Pt), and palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).

20. The display apparatus of claim 11 , wherein the oxide semiconductor layer comprises In—Ga—Zn—O (IGZO), In—Sn—Zn—O (ITZO) or In—Ga—Sn—Zn—O (IGTZO).

21. A display apparatus comprising:
a substrate;
a first semiconductor layer on the substrate and including a silicon semiconductor;
a first gate electrode insulated from the first semiconductor layer and overlapping the first semiconductor layer;
a first interlayer insulating layer on the first gate electrode;
a second semiconductor layer on the first interlayer insulating layer and including an oxide semiconductor, wherein a part of the second semiconductor layer overlaps a part of the first semiconductor layer;
a second gate electrode on the second semiconductor layer and insulated from a part of the second semiconductor layer; and
a capacitor comprising a first electrode and a second electrode overlapping the first electrode, wherein the second electrode is integrally coupled to the second semiconductor layer.

22. The display apparatus of claim 21 , wherein the first electrode of the capacitor is disposed in a same layer as the first gate electrode.

23. The display apparatus of claim 21 , further comprising a lower gate electrode arranged in a same layer as the first gate electrode and overlapped with the second semiconductor layer.

24. The display apparatus of claim 23 , wherein the lower gate electrode is opposite to the second gate electrode with a part of the second semiconductor layer therebetween in direction perpendicular to a top surface of the substrate.

25. The display apparatus of claim 21 , further comprising a first gate insulating layer interposed between the first semiconductor layer and the first gate electrode.

26. The display apparatus of claim 21 , further comprising a second gate insulating layer interposed between the second semiconductor layer and the second gate electrode.

27. The display apparatus of claim 21 , each of the first gate electrode and the second gate electrode comprises at least one selected from aluminum (Al), platinum (Pt), and palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu).

28. The display app

Assignees

• Samsung Display Co Ltd

Inventors

• Yoon Juwon
• Yang Taehoon

Classifications

• H10K59/1216

  the pixel elements being capacitors · CPC title

• H10D86/481 Primary

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title

• H10D86/451

  characterised by the compositions or shapes of the interlayer dielectrics · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title