Display apparatus

Patent metadata

Field	Value
Publication number	US-10741625-B2
Application number	US-201916352262-A
Country	US
Kind code	B2
Filing date	Mar 13, 2019
Priority date	Mar 13, 2018
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

First claim

What is claimed is:

1. A display apparatus comprising:
a substrate including a display area;
a first thin film transistor arranged on the display area of the substrate, the first thin film transistor having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer;
a second thin film transistor arranged on the display area of the substrate, the second thin film transistor having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and
a storage capacitor at least partially overlapping the first thin film transistor, the storage capacitor having a lower electrode and an upper electrode, wherein
the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.

2. The display apparatus as claimed in claim 1 , further comprising
a second gate insulating layer arranged between the first gate electrode and the second semiconductor layer, wherein:
the lower electrode of the storage capacitor and the first gate electrode of the first thin film transistor are formed in one same body, and
the upper electrode of the storage capacitor is arranged on the second gate insulating layer.

3. The display apparatus as claimed in claim 1 , wherein:
the second semiconductor layer of the second thin film transistor includes a second channel area, a second source area, and a second drain area, the second source area and the second drain area respectively arranged at two opposite sides of the second channel area, and
the upper electrode of the storage capacitor and at least one of the second source area and the second drain area include a same material.

4. The display apparatus as claimed in claim 1 , further comprising
a display device driven by the first thin film transistor and the second thin film transistor, wherein
the first thin film transistor includes a driving thin film transistor to supply a driving current to the display device.

5. The display apparatus as claimed in claim 1 , further comprising
a first wire in the display area, wherein
the first wire and the upper electrode of the storage capacitor are arranged on a same layer, and include a same material.

6. The display apparatus as claimed in claim 1 , further comprising
a second wire in the display area, wherein
the second wire and the first gate electrode are arranged on a same layer and include a same material.

7. The display apparatus as claimed in claim 1 , further comprising:
a second gate insulating layer arranged between the first gate electrode and the second semiconductor layer; and
a third gate insulating layer arranged between the second semiconductor layer and the second gate electrode, wherein:
the lower electrode of the storage capacitor and the second semiconductor layer are arranged on a same layer;
a dielectric layer of the storage capacitor and the third gate insulating layer are formed of a same material; and
the upper electrode of the storage capacitor and the second gate electrode of the second thin film transistor are arranged on a same layer as.

8. The display apparatus as claimed in claim 1 , further comprising
an interlayer insulating layer arranged on the second gate electrode;
a first electrode arranged on the interlayer insulating layer and connected to the first semiconductor layer through a contact hole defined in the interlayer insulating layer;
a planarization layer arranged on the first electrode;
a connection electrode arranged on the planarization layer and connected to the first electrode through a contact hole defined in the planarization layer; and
an upper planarization layer arranged on the connection electrode.

9. The display apparatus as claimed in claim 8 , further comprising
an organic light-emitting device arranged on the upper planarization layer, the organic light-emitting device including a pixel electrode, an intermediate layer comprising an organic emission layer, and an opposite electrode.

10. A display apparatus comprising:
a substrate including a first area, a second area, and a bending area between the first area and the second area, the bending area bent with respect to a bending axis;
a first thin film transistor, a second thin film transistor, and a storage capacitor arranged in the first area of the substrate;
a connection wire extending from the first area to the second area across the bending area; and
an inner wire and an outer wire respectively connected to the connection wire, the inner wire and the outer wire spaced apart from each other by the bending area, wherein:
the first thin film transistor has a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer,
the second thin film transistor has a second semiconductor layer including an oxide semiconductor layer and a second gate electrode insulated from the second semiconductor layer by a third gate insulating layer, and
the second semiconductor layer and one of a lower electrode and an upper electrode of the storage capacitor are arranged on a same layer.

11. The display apparatus as claimed in claim 10 , further comprising
a display device driven by the first thin film transistor and the second thin film transistor, wherein
the first thin film transistor includes a driving thin film transistor to supply a driving current to the display device.

12. The display apparatus as claimed in claim 10 , wherein
the storage capacitor at least partially overlaps the first thin film transistor.

13. The display apparatus as claimed in claim 10 , further comprising
a second gate insulating layer arranged between the first gate electrode of the first thin film transistor and the second semiconductor layer, wherein:
the lower electrode of the storage capacitor and the first gate electrode of the first thin film transistor are formed in one body, and
the upper electrode of the storage capacitor is arranged on the second gate insulating layer.

14. The display apparatus as claimed in claim 10 , wherein
parts of the inner wire and the outer wire are arranged on a same layer, and wherein the inner wire, the outer wire, and the first gate electrode include a same material.

15. The display apparatus as claimed in claim 10 , wherein
parts of the inner wire and the outer wire are arranged on a same layer, and wherein the inner wire, the outer wire, and the second gate electrode include a same material.

16. The display apparatus as claimed in claim 15 , further comprising
a third gate insulating layer between the second semiconductor layer and the second gate electrode, wherein:
the third gate insulating layer is arranged below the inner wire, and
a width of the third gate insulating layer arranged below the inner wire is substantially identical to a width of the inner wire.

17. The display apparatus as claimed in claim 10 , further comprising
an interlayer insulating layer arranged on the substrate and covering the second gate electrode;
a first electrode arranged on the interlayer insulating layer and connected to the first semiconductor layer; and
a planarization layer covering the first electrode.

18. The display apparatus as claimed in claim 17 , further comprising
an organic material layer arranged between the substrate and the connection wire in the bending area, wherein
the organic materia

Assignees

• Samsung Display Co Ltd

Inventors

• Kang Chulkyu
• Choi Sangmoo
• Kwak Wonkyu
• Park Jinwoo
• Lee Dongsun

Classifications

• H10K59/1216

  the pixel elements being capacitors · CPC title

• H10K59/1213 Primary

  the pixel elements being TFTs · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/673

  characterised by the shapes, relative sizes or dispositions of the gate electrodes · CPC title

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title