Charge or electricity generating devices and methods of making and use thereof

Patent metadata

Field	Value
Publication number	US-12213327-B2
Application number	US-202117921522-A
Country	US
Kind code	B2
Filing date	Jun 9, 2021
Priority date	Jun 9, 2020
Publication date	Jan 28, 2025
Grant date	Jan 28, 2025

Abstract

Disclosed herein are charge or electricity generating devices and methods of making and use thereof.

First claim

What is claimed is:

1. A charge or electricity generating device comprising:
a first electrode;
an electron transport layer;
a perovskite layer;
a hole transport layer; and
a second electrode;
wherein the electron transport layer is disposed between the first electrode and the perovskite layer such that the electron transport layer is in physical contact with the first electrode and the perovskite layer;
wherein the perovskite layer is disposed between the electron transport layer and the hole transport layer such that the perovskite layer is in physical contact with the electron transport layer and the hole transport layer;
wherein the hole transport layer is disposed between the second electrode and the perovskite layer such that the hole transport layer is in physical contact with the perovskite layer and the second electrode;
wherein the perovskite layer comprises a perovskite having a crystal lattice comprising a plurality of atoms, wherein at least a portion of the plurality of atoms within the crystal lattice of the perovskite comprise a radioactive isotope having a half-life of 100 days or more, wherein each radioactive isotope replaces one atom that is a non-radioactive counterpart of the radioactive isotope, such that the perovskite intrinsically comprises one or more radioactive isotopes in its crystal lattice; and
wherein:
the perovskite layer comprises an n-type perovskite layer and a p-type perovskite layer;
wherein the n-type perovskite layer comprises the perovskite doped with an n-type dopant or comprises the perovskite with n-type self-doping;
wherein the p-type perovskite layer comprises the perovskite doped with a p-type dopant or comprises the perovskite with p-type self-doping;
wherein the n-type perovskite layer is disposed between the electron transport layer and the p-type perovskite layer such that the n-type perovskite layer is in physical contact with the electron transport layer and the p-type perovskite layer; and
wherein the p-type perovskite layer is disposed between the n-type perovskite layer and the hole transport layer such that the p-type perovskite layer is in physical contact with the n-type perovskite layer and the hole transport layer.

2. The device of claim 1 , wherein:
the perovskite layer has an average thickness of from 100 nanometers (nm) to 10 centimeters (cm);
the electron transport layer has an average thickness of from 10 nanometers (nm) to 1000 nm;
the hole transport layer has an average thickness of from 10 nm to 1000 nm;
the first electrode has an average thickness of from 10 nm to 1000 nm;
the second electrode has an average thickness of from 10 nm to 1000 nm;
or a combination thereof.

3. The device of claim 1 , wherein:
the n-type perovskite layer has an average thickness of from 100 nm to 10 centimeters (cm);
the n-type dopant is present in the n-type perovskite layer in a concentration of from 10 8 per cm 3 to 10 18 per cm 3 ;
the p-type perovskite layer has an average thickness of from 100 nm to 10 centimeters (cm);
the p-type dopant is present in the p-type perovskite layer in a concentration of from 10 8 per cm 3 to 10 18 per cm 3 ;
or a combination thereof.

4. The device of claim 1 , wherein at least one of the first electrode or the second electrode comprises a metal, a radioactive isotope, a transparent conducting oxide, or a combination thereof.

5. The device of claim 1 , wherein the first electrode, the second electrode, or a combination thereof comprises 63 Ni.

6. The device of claim 1 , wherein the perovskite comprises a material defined by the formula:
[Q][Z][X] 3
wherein:
Q is at least one cation comprising an organic group, an inorganic group, or a combination thereof;
Z is at least one cation comprising a metal, a metalloid, or a combination thereof; and
X is at least one anion comprising a halide;
wherein at least a portion of Q, Z, X, or a combination thereof comprises the radioactive isotope having a half-life of 100 days or more.

7. The device of claim 6 , wherein:
Q, Z and X are different from each other; and
Q is methylammonium CH 3 NH 3 (MA), formamidinum CH(NH 2 ) 2 (FA), n-butylammonium, tetra-butylammonium C 4 H 9 NH 3 (BA), Cs, or a combination thereof;
Z is Pb, Sn, Cs, or a combination thereof; and
X is I, Cl, Br, or a combination thereof.

8. The device of claim 6 , wherein the radioactive isotope is 14 C, 36 Cl, 134 Cs, 135 Cs, 137 Cs, 3 H, 129 I, 202 Pb, 205 Pb, 210 Pb, 113 Sn, 123 Sn, 126 Sn, or a combination thereof.

9. The device of claim 1 , wherein the perovskite comprises a material defined by the formula:
[Q] 2 [M][M′][X] 6

wherein:
Q, M, M′ and X are different from each other; and
Q is at least one cation comprising an organic group, an inorganic group, or a combination thereof;
M is at least one cation comprising a metal, a metalloid, or a combination thereof; and
M′ is at least one cation comprising a metal, a metalloid, or a combination thereof; and
X is at least one anion comprising a halide;
wherein at least a portion of Q, M, M′, X, or a combination thereof comprises the radioactive isotope having a half-life of 100 days or more.

10. The device of claim 9 , wherein:
Q is methylammonium CH 3 NH 3 (MA), formamidinum CH(NH 2 ) 2 (FA), n-butylammonium, tetra-butylammonium C 4 H 9 NH 3 (BA), Cs, or a combination thereof;
M is Cu, Ag, or a combination thereof;
M′ is Bi, Ga, In, or a combination thereof; and
X is I, Cl, Br, or a combination thereof.

11. The device of claim 9 , wherein the radioactive isotope is 108m Ag, 110m2 Ag, 207 Bi, 208 Bi, 209 Bi, 210m Bi, 14 C, 36 Cl, 134 Cs, 135 Cs, 137 Cs, 3 H, 129 I, 115 In, 113 Sn, 123 Sn, 126 Sn, or a combination thereof.

12. The device of claim 1 , wherein;
the perovskite comprises Cs 4 Eu[X] 6 , Cs 4 Pb[X] 6 , CsPb 2 [X] 5 , or a combination thereof, wherein X is one or more anions comprising a halide; and
the radioactive isotope is 36 Cl, 134 Cs, 135 Cs, 137 Cs, 150 Eu, 152 Eu, 154 Eu, 155 Eu, 129 I, 202 Pb, 205 Pb, 210 Pb, or a combination thereof.

13. The device of claim 1 , wherein the perovskite comprises MAPbI 3 , MAPbBr 3 , MAPbCl 3 , MAPbBr 2.94 Cl 0.06 , MAPbBr 2.85 Cl 0.15 , FA 0.97 MA 0.03 PbBr 2.91 Cl 0.09 , Cs 0.2 MA 0.8 PbBr 2.98 Cl 0.02 , CsPbBr 3 , FAPbBr 3 , FA 0.97 MA 0.03 PbBr 2.91 Cl 0.09 , Cs 2 AgBiBr 6 , or a combination thereof.

14. The device of claim 13 , wherein the radioactive isotope is 108m Ag, 110m2 Ag, 207 Bi, 208 Bi, 209 Bi, 210m Bi, 14 C, 36 Cl, 134 Cs, 135 Cs, 137 Cs, 3 H, 129 I, 202 Pb, 205 Pb, 210 Pb, or a combination thereof.

15. The device of claim 1 , wherein the radioactive isotope replaces 0.1% or more of the non-radioactive counterpart atom in the crystal lattice of the perovskite.

16. The device of claim 1 , wherein the radioactive isotope emits alpha particles, beta particles, gamma photons, or a combination thereof.

17. The device of claim 1 , wherein the device has a radioactivity density of from 1×10 8 Becquerel (Bq) per cubic centimeter (cm 3 ) to 1×10 13 Bq/cm 3 .

18. A charge or electricity generating device comprising:
a first electrode;
an n-type perovskite layer;
a p-type perovskite layer; and
a second electrode;
wherein the n-type perovskite layer is disposed between the first electrode and the p-type perovskite layer such that the n-type perovskite layer is in physical contact with the first electrode and the p-type perovskite layer;
wherein the p-type perovskite layer is disposed between the n

Assignees

• Ohio State Innovation Foundation

Inventors

• Cao Lei Raymond
• Pan Lei

Classifications

• H10K39/10

  Organic photovoltaic [PV] modules; Arrays of single organic PV cells · CPC title

• H10K30/50 Primary

  Photovoltaic [PV] devices · CPC title

• H01G4/1218 Primary

  based on titanium oxides or titanates (H01G4/1245 takes precedence) · CPC title

• H10K30/85

  Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers · CPC title

• G21H3/02

  in which material is excited to luminesce by the radiation (lamps in which a gas filling or screen or coating is excited to luminesce by radioactive material structurally associated with the lamp  H01J65/00) · CPC title