Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-9966503-B2
Application number	US-201415038562-A
Country	US
Kind code	B2
Filing date	Dec 18, 2014
Priority date	Dec 19, 2013
Publication date	May 8, 2018
Grant date	May 8, 2018

Abstract

An optoelectronic semiconductor component and a method for manufacturing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a plurality of active regions configured to generate a primary radiation and a plurality of luminescent material particles configured to convert the primary radiation into a secondary radiation, wherein the active regions are arranged spaced apart from each other, wherein each active region has a main extension direction, wherein each active region has a core region comprising a first semiconductor material, wherein each active region has an active layer covering the core region, wherein each active region has a cover layer comprising a second semiconductor material and covering the active layer, wherein at least some of the luminescent material particles are arranged between the active regions, and wherein a diameter of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions.

First claim

The invention claimed is:

1. A method for producing an optoelectronic semiconductor component, the method comprising:
providing a plurality of active regions configured to generate a primary radiation;
providing a suspension comprising a solvent and luminescent material particles of different types, the luminescent material particles being configured to convert the primary radiation into a secondary radiation, wherein luminescent material particles of a first type are disposed in a first layer that covers an outer surface of each active region of the plurality of active regions, and wherein the first layer has intermediate spaces between two adjacent active regions of the plurality of active regions, and wherein luminescent material particles of a second type different from the first type fill the intermediate spaces; and
electrophoretically depositing at least some of the luminescent material particles between active regions of the plurality of active regions,
wherein a diameter of each luminescent material particle of a majority of the luminescent material particles, which are electrophoretically deposited, is smaller than a distance between two adjacent active regions of the plurality of active regions, and wherein different types of luminescent material particles are arranged in different layers.

2. The method according to claim 1 , further comprising providing a current spreading layer on, and contacting, the plurality of active regions, and using the current spreading layer as an electrode during the electrophoretically depositing.

3. The method according to claim 1 , wherein the suspension rests, before electrophoretically depositing, for a period of time in a reaction vessel such that luminescent material particles having a diameter which is greater than a minimum average distance between adjacent active regions of the plurality of active regions settle and subsequently are not electrophoretically deposited.

4. An optoelectronic semiconductor component, the component comprising:
a plurality of active regions configured to generate a primary radiation; and
luminescent material particles of different types configured to convert the primary radiation into a secondary radiation of different wavelengths,
wherein each active region of the plurality of active regions are arranged spaced apart from each other active region of the plurality of active regions,
wherein each active region of the plurality of active regions has a main extension direction,
wherein each active region of the plurality of active regions has a core region comprising a first semiconductor material,
wherein each active region of the plurality of active regions comprises an active layer covering the core region at least in directions transverse to the main extension direction of the respective active region,
wherein each active region of the plurality of active regions comprises a cover layer comprising a second semiconductor material and covering the active layer at least in the directions transverse to the main extension direction of the respective active region,
wherein at least some of the luminescent material particles are arranged between active regions of the plurality of active regions,
wherein a diameter of each luminescent material particle of a majority of the luminescent material particles is smaller than a distance between two adjacent active regions of the plurality of active regions,
wherein the different types of luminescent material particles are arranged in different layers; and
wherein luminescent material particles of a first type are disposed in a first layer that covers an outer surface of each active region of the plurality of active regions, and wherein the first layer has intermediate spaces between two adjacent active regions of the plurality of active regions, and wherein luminescent material particles of a second type different from the first type fill the intermediate spaces.

5. The optoelectronic semiconductor component according to claim 4 , wherein a D 90 diameter of each luminescent material particle of the majority of the luminescent material particles is smaller than an average minimum distance between adjacent active regions of the plurality of active regions.

6. The optoelectronic semiconductor component according to claim 4 , wherein a D50 diameter of each luminescent material particle of the majority of the luminescent material particles is between at least 10% and at most 50% of an average minimum distance between adjacent active regions of the plurality of active regions.

7. The optoelectronic semiconductor component according to claim 4 , wherein a current spreading layer covers at least a portion of each active region of the plurality of active regions at an outer surface of the respective active region, and wherein the current spreading layer connects each active of the plurality of active regions together in an electrically conductive manner.

8. The Optoelectronic semiconductor component according to claim 4 , wherein some of the luminescent material particles directly adjoin at least one of the cover layer of the plurality of active regions or a current spreading layer.

9. The optoelectronic semiconductor component according to claim 8 , wherein a distance between some of the luminescent material particles and at least one active layer of at least one active region of the plurality of active regions is at most 100 nm.

10. The optoelectronic semiconductor component according to claim 4 , wherein each particle of the luminescent material particles is covered at least partially by radiation-scattering and/or radiation-absorbing particles.

11. The optoelectronic semiconductor component according to claim 10 , wherein the luminescent material particles and the radiation-scattering and/or radiation-absorbing particles are electrophoretically applied.

12. The optoelectronic semiconductor component according to claim 10 , wherein a passivation layer covers the luminescent material particles and the radiation-scattering and/or radiation-absorbing particles at least on their sides facing away from the plurality of active regions.

13. The optoelectronic semiconductor component according to claim 4 , wherein the component is free of a matrix material for the luminescent material particles.

14. The optoelectronic semiconductor component according to the claim 4 , wherein a distance between some of the luminescent material particles and at least one active layer of the plurality of active regions is at most 100 nm, and wherein the optoelectronic semiconductor component is free of a matrix material for the luminescent material particles.

15. An optoelectronic semiconductor component, the component comprising:
a plurality of active regions configured to generate a primary radiation; and
luminescent material particles of different types configured to convert the primary radiation into a secondary radiation of different wavelengths;
wherein each active region of the plurality of active regions are arranged spaced apart from each other active region of the plurality of active regions;
wherein each active region of the plurality of active regions has a main extension direction;
wherein each active region of the plurality of active regions has a core region comprising a first semiconductor material;
wherein each active region of the plurality of active regions comprises an active layer covering the core region at least in directions transverse to the main extension direction of the respective active region;
wherein each active region of the plurality of active regions comprises a cover layer comprising a sec

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Straβburg Martin
• Mandl Martin
• Schimpke Tilman
• Stoll Ion
• Huckenbeck Barbara
• Zwaschka Franz
• Bichler Daniel

Classifications

• H01L33/32

  Electricity · mapped topic

• H01L2933/0041

  Electricity · mapped topic

• H01L27/156

  Electricity · mapped topic

• H01L33/56

  Electricity · mapped topic

• H01L33/504

  Electricity · mapped topic