Micro led display panel
US-2024371838-A1 · Nov 7, 2024 · US
US8969900B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8969900-B2 |
| Application number | US-201113883346-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 2, 2011 |
| Priority date | Nov 12, 2010 |
| Publication date | Mar 3, 2015 |
| Grant date | Mar 3, 2015 |
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Official abstract text for this publication.
An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
Opening claim text (preview).
The invention claimed is: 1. An optoelectronic semiconductor chip comprising: a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semicondu…
Electricity · mapped topic
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