Substrate cleaning method, substrate cleaning device, and method of selecting cluster generating gas
US-2019035651-A1 · Jan 31, 2019 · US
Substrate cleaning method and substrate cleaning device
US12198947B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12198947-B2 |
| Application number | US-202017771144-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 12, 2020 |
| Priority date | Oct 23, 2019 |
| Publication date | Jan 14, 2025 |
| Grant date | Jan 14, 2025 |
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- Title
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Abstract
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A substrate cleaning method includes: supplying a gas mixture of a cluster forming gas for forming a cluster by adiabatic expansion and a carrier gas having a smaller molecular weight or atomic weight than the cluster forming gas to a nozzle; forming the cluster by injecting the gas mixture from the nozzle; removing particles adhering to the substrate by the cluster; and continuously supplying the carrier gas to the nozzle for a set time period from an end time of the supply of the cluster forming gas to the nozzle.
First claim
Opening claim text (preview).
The invention claimed is: 1. A substrate cleaning method comprising: supplying a gas mixture of a cluster forming gas for forming a cluster by adiabatic expansion and a carrier gas having a smaller molecular weight or atomic weight than the cluster forming gas to a nozzle; forming the cluster by injecting the gas mixture from the nozzle; removing particles adhering to a substrate by the cluster; stopping a supply of the cluster forming gas to the nozzle while the carrier gas is supplied to the nozzle; and suppressing a liquefication of the cluster forming gas inside the nozzle for a set time period by continuously supplying the carrier gas to the nozzle and heating the nozzle by a heater starting from an end time at which the supply of the cluster forming gas to the nozzle ends. 2. The substrate cleaning method of claim 1 , wherein the supplying the gas mixture to the nozzle includes supplying the carrier gas to the nozzle at a first flow rate, and wherein the substrate cleaning method further comprises supplying the carrier gas to the nozzle at a second flow rate higher than the first flow rate during the set time period. 3. The substrate cleaning method of claim 1 , wherein the supplying the gas mixture to the nozzle includes stopping heating the nozzle by the heater. 4. The substrate cleaning method of claim 2 , wherein the supplying the gas mixture to the nozzle includes stopping heating the nozzle by the heater. 5. The substrate cleaning method of claim 1 , wherein the supplying the gas mixture to the nozzle includes supplying a coolant to the nozzle, and wherein the substrate cleaning method further comprises stopping a supply of the coolant to the nozzle during the set time period. 6. The substrate cleaning method of claim 2 , wherein the supplying the gas mixture to the nozzle includes supplying a coolant to the nozzle, and wherein the substrate cleaning method further comprises stopping a supply of the coolant to the nozzle during the set time period. 7. The substrate cleaning method of claim 1 , further comprising setting a relative position of the nozzle and the substrate to a position where a gas is injected from the nozzle toward the substrate during the set time period. 8. The substrate cleaning method of claim 2 , further comprising setting a relative position of the nozzle and the substrate to a position where a gas is injected from the nozzle toward the substrate during the set time period. 9. The substrate cleaning method of claim 1 , wherein the cluster forming gas includes one or more gases selected from the group consisting of carbon dioxide gas and argon gas, and wherein the carrier gas includes one or more gases selected from the group consisting of hydrogen gas and helium gas. 10. The substrate cleaning method of claim 2 , wherein the cluster forming gas includes one or more gases selected from the group consisting of carbon dioxide gas and argon gas, and wherein the carrier gas includes one or more gases selected from the group consisting of hydrogen gas and helium gas.
Assignees
Inventors
Classifications
mainly by conduction · CPC title
- H10P72/0414Primary
using mainly spraying means, e.g. nozzles · CPC title
for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
- H10P70/12Primary
by dry cleaning only (H10P70/52 takes precedence) · CPC title
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- What does patent US12198947B2 cover?
- A substrate cleaning method includes: supplying a gas mixture of a cluster forming gas for forming a cluster by adiabatic expansion and a carrier gas having a smaller molecular weight or atomic weight than the cluster forming gas to a nozzle; forming the cluster by injecting the gas mixture from the nozzle; removing particles adhering to the substrate by the cluster; and continuously supplying …
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P72/0414. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 14 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).