Superconducting device with at least one enclosure

Patent metadata

Field	Value
Publication number	US-10424711-B2
Application number	US-201414761912-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Jan 18, 2013
Publication date	Sep 24, 2019
Grant date	Sep 24, 2019

Abstract

Some embodiments are directed to a device including multiple substrates comprising one or more troughs. The substrates are disposed such that the one or more troughs form at least one enclosure. At least one superconducting layer covers at least a portion of the at least one enclosure. Other embodiments are directed to a method for manufacturing a superconducting device. The method includes acts of forming at least one trough in at least a first substrate; covering at least a portion of the first substrate with a superconducting material; covering at least a portion of a second substrate with the superconducting material; and bonding the first substrate and the second substrate to form at least one enclosure comprising the at least one trough and the superconducting material.

First claim

What is claimed is:

1. A device comprising:
a plurality of semiconductor substrates comprising one or more troughs, wherein the plurality of semiconductor substrates are disposed such that the one or more troughs form at least one enclosure;
at least one superconducting layer covering at least a portion of the at least one enclosure, wherein the at least one enclosure is configured to form at least one three-dimensional cavity resonator such that electromagnetic radiation at one or more frequencies resonates within the at least one three-dimensional cavity resonator; and
at least one superconducting qubit coupled to the at least one three-dimensional cavity resonator.

2. The device of claim 1 , wherein the at least one superconducting qubit is a transmon qubit.

3. The device of claim 1 , wherein the at least one superconducting qubit is a fluxonium qubit.

4. The device of claim 1 , further comprising:
a superconducting wiring layer disposed on and/or in a first substrate of the plurality of substrates, the superconducting wiring layer configured to couple the at least one superconducting qubit to the at least one three-dimensional cavity resonator.

5. The device of claim 4 , further comprising:
at least one aperture in the at least one superconducting layer configured to couple the superconducting wiring layer to the at least one three-dimensional cavity resonator.

6. The device of claim 4 , further comprising:
at least one via connecting the superconducting wiring layer to at least one superconducting component of a second substrate of the plurality of substrates.

7. The device of claim 1 , wherein the at least one superconducting qubit is disposed within the at least one three-dimensional cavity resonator such that the at least one superconducting qubit is configured to couple to the at least one three-dimensional cavity resonator via electromagnetic radiation.

8. The device of claim 1 , wherein the plurality of substrates comprise a material with a crystalline structure.

9. The device of claim 8 , wherein the material is silicon.

10. The device of claim 1 , wherein the one or more troughs comprises a first trough with a first trough surface opposed to a second trough surface, wherein the first trough surface is not parallel to the second trough surface.

11. The device of claim 1 , wherein at least one surface of the one or more troughs is atomically smooth.

12. The device of claim 1 , wherein the at least one enclosure is evacuated to a pressure less than atmospheric pressure.

13. A device comprising:
a plurality of semiconductor substrates comprising one or more troughs, wherein the plurality of semiconductor substrates are disposed such that the one or more troughs form at least one enclosure; and
at least one superconducting layer covering at least a portion of the at least one enclosure, wherein the at least one enclosure is configured to form at least one three-dimensional cavity resonator such that electromagnetic radiation at one or more frequencies resonates within the at least one three-dimensional cavity resonator, and wherein a Q factor of the at least one three-dimensional cavity resonator is greater than ten million.

14. A device comprising:
a plurality of semiconductor substrates comprising one or more troughs, wherein the plurality of semiconductor substrates are disposed such that the one or more troughs form at least one enclosure; and
at least one superconducting layer covering at least a portion of the at least one enclosure,
wherein the at least one enclosure is configured to form at least one three-dimensional cavity resonator such that electromagnetic radiation at one or more frequencies resonates within the at least one three-dimensional cavity resonator, wherein the at least one three-dimensional cavity resonator comprises a first three-dimensional cavity resonator and a second three-dimensional cavity resonator, wherein a Q factor of the first three-dimensional cavity resonator is greater than a Q factor of the second three-dimensional cavity resonator.

15. A device according to any of claim 13 , 14 or 1 , wherein the one or more frequencies comprise at least one microwave frequency.

16. A device according to any of claim 13 , 14 or 1 , wherein:
the at least one enclosure is configured to form at least one electromagnetic shield such that external electromagnetic radiation is prevented from entering the at least one enclosure.

17. The device of claim 16 , further comprising:
at least one superconducting component disposed within the at least one electromagnetic shield.

18. The device of claim 17 , wherein the at least one superconducting component comprises at least one superconducting circuit.

19. The device of claim 17 , wherein the at least one superconducting component comprises at least one qubit.

20. The device of claim 19 , wherein the at least one superconducting component comprises at least one stripline resonator.

21. The device of claim 20 , wherein:
the plurality of substrates comprises a first substrate and a second substrate;
the first substrate comprises a first trough of the one or more troughs;
the second substrate comprises a second trough of the one or more troughs the at least one superconducting layer comprises:
a first superconducting layer that covers at least a portion of the first trough; and
a second superconducting layer that covers at least a portion of the second trough;
the first substrate and the second substrate are disposed such that the first trough and the second trough form the at least one enclosure; and
the at least one stripline resonator is disposed within the at least one electromagnetic shield.

22. The device of claim 21 , further comprising:
at least one support layer suspended within the at least one electromagnetic shield, wherein the at least one stripline resonator is disposed on and/or in the at least one support layer.

23. The device of claim 22 , wherein the at least one support layer comprises at least one material selected from the group consisting of silicon, silicon oxide, and silicon nitride.

24. The device of claim 20 , wherein the at least one electromagnetic shield is configure to be a part of a circuit associated with the at least one stripline resonator.

25. A device comprising:
a plurality of semiconductor substrates comprising one or more troughs, wherein the plurality of semiconductor substrates are disposed such that the one or more troughs form at least one enclosure; and
at least one superconducting layer covering at least a portion of the at least one enclosure,
wherein the at least one enclosure is configured to form at least one three-dimensional cavity resonator such that electromagnetic radiation at one or more frequencies resonates within the at least one three-dimensional cavity resonator, and wherein:
the plurality of substrates comprises a first substrate and a second substrate;
the first substrate comprises a first trough of the one or more troughs;
the at least one superconducting layer comprises:
a first superconducting layer that covers at least a portion of the first trough; and
a second superconducting layer that covers at least a portion of a surface of the second substrate; and
the first substrate and the second substrate are disposed such that the first superconducting layer and the second superconducting layer are in direct contact and the first trough forms

Assignees

• Univ Yale

Inventors

• Schoelkopf Iii Robert J
• Brecht Teresa
• Frunzio Luigi
• Devoret Michel

Classifications

• H01L39/045

  Electricity · mapped topic

• H01L39/223

  Electricity · mapped topic

• G06N99/002

  Physics · mapped topic

• H01L39/025

  Electricity · mapped topic

• H01L27/18

  Electricity · mapped topic