Baffle implementation for improving bottom purge gas flow uniformity

US12183553B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12183553-B2
Application numberUS-202016891626-A
CountryUS
Kind codeB2
Filing dateJun 3, 2020
Priority dateJun 6, 2019
Publication dateDec 31, 2024
Grant dateDec 31, 2024

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

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The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl includes a first surface having a first equalizer hole. A passage couples the processing volume to the purge volume via the first equalizer hole and an inlet. The passage is positioned above the first equalizer hole. The chamber base has a purge port coupleable to a purge gas line for supplying a purge gas to the purge volume. A baffle is disposed in the purge volume at a height above the purge port, and is configured to deflect a trajectory of the purge gas.

First claim

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What we claim is: 1. A processing chamber comprising: a lid, sidewalls, and a substrate support collectively defining a processing volume; a bottom bowl comprising a first equalizer hole disposed therethrough; a chamber base, the chamber base and bottom bowl collectively defining a purge volume disposed beneath the processing volume, the chamber base comprising a purge port couplable to a purge gas line for supplying a purge gas to the purge volume via the purge port; a first bellows configured to maintain a vacuum integrity of a portion of an internal volume between the substrate support and the bottom bowl, the first bellows circumscribing a support shaft and coupled to a radially outward edge of the substrate support and the bottom bowl, wherein the internal volume comprises the processing volume and the purge volume; a passage positioned above the first equalizer hole, coupled to the processing volume via an inlet, and coupled to the purge volume via the first equalizer hole; and a second bellows disposed in the purge volume, wherein the purge volume is defined by the second bellows, the chamber base, the bottom bowl, and the sidewalls; a baffle disposed in the purge volume at a height above the purge port, wherein the baffle is configured to deflect a trajectory of the purge gas entering the purge volume. 2. The processing chamber of claim 1 , wherein the baffle is disposed at a height above the purge port equal to 1 to 3 times a thickness of the baffle. 3. The processing chamber of claim 2 , wherein the baffle is configured to reduce a velocity of the purge gas at the first equalizer hole to less than between 10 percent to 20 percent of the velocity of the purge gas at the purge port. 4. The processing chamber of claim 1 , wherein the baffle comprises: a first leg positioned substantially parallel to a direction of a purge gas jet; a second leg positioned orthogonally to the first leg, wherein the second leg is configured to reduce a velocity of the purge gas jet. 5. The processing chamber of claim 1 , wherein, a first average mass flow rate of the purge gas at the first equalizer hole is within one standard deviation of a second average mass flow rate at a second equalizer hole disposed in the bottom bowl, the first equalizer hole being immediately adjacent to the second equalizer hole. 6. The processing chamber of claim 5 , wherein, a third average mass flow rate of the purge gas at a third equalizer hole disposed in the bottom bowl is within one standard deviation of the second average mass flow rate at the second equalizer hole, and within one standard deviation of the first average mass flow rate at the first equalizer hole, the first equalizer hole being immediately adjacent to the second equalizer hole, and the second equalizer hole being immediately adjacent to the third equalizer hole. 7. A processing chamber comprising: a lid, sidewalls, and a substrate support collectively defining a processing volume; a bottom bowl comprising a first equalizer hole disposed therethrough; a chamber base, the chamber base and bottom bowl collectively defining a purge volume disposed beneath the processing volume, the chamber base comprising a purge port couplable to a purge gas line for supplying a purge gas to the purge volume via the purge port; a bellows configured to maintain a vacuum integrity of a portion of an internal volume between the substrate support and the bottom bowl, the bellows circumscribing a support shaft to define a passage and coupled to the radially outward edge of the substrate support, wherein the passage is radially surrounding the bellows, and wherein the internal volume comprises the processing volume and the purge volume; the passage positioned above the first equalizer hole, coupled to the processing volume via an inlet, and coupled to the purge volume via the first equalizer hole, and wherein the chamber base has a second purge port couplable to a second purge gas line for supplying the purge gas to the purge volume via the second purge port; a baffle disposed in the purge volume at a height above the first purge port and the second purge port. 8. The processing chamber of claim 7 , wherein the baffle is disposed at a height above the first purge port or the second purge port equal to 1 to 3 times a thickness of the baffle. 9. The processing chamber of claim 8 , wherein the baffle is configured to reduce a velocity of the purge gas at the first equalizer hole to less than between 10 percent to 20 percent of the velocity of the purge gas at the first purge port or the second purge port. 10. The processing chamber of claim 7 , wherein the baffle comprises: a first leg positioned substantially parallel to a direction of a purge gas jet; a second leg positioned orthogonally to the first leg, wherein the second leg is configured to reduce a velocity of the purge gas jet. 11. The processing chamber of claim 7 , wherein the baffle is configured to reduce a velocity of the purge gas at the first equalizer hole to less than 20 percent of the velocity of a purge gas jet at the first purge port or the second purge port. 12. The processing chamber of claim 7 , wherein, a first average mass flow rate of the purge gas at the first equalizer hole is within one standard deviation of a second average mass flow rate at a second equalizer hole disposed in the bottom bowl, the first equalizer hole being immediately adjacent to the second equalizer hole. 13. The processing chamber of claim 12 , wherein, a third average mass flow rate of the purge gas at a third equalizer hole disposed in the bottom bowl is within one standard deviation of the second average mass flow rate at the second equalizer hole, and within one standard deviation of the first average mass flow rate at the first equalizer hole, the first equalizer hole being immediately adjacent to the second equalizer hole, and the second equalizer hole being immediately adjacent to the third equalizer hole. 14. A processing chamber comprising: a lid, sidewalls, and a substrate support collectively defining a processing volume; a bottom bowl comprising a first equalizer hole disposed therethrough; a chamber base, the chamber base and bottom bowl collectively defining a purge volume disposed beneath the processing volume, the chamber base comprising a purge port couplable to a purge gas line for supplying a purge gas to the purge volume via the purge port; a first bellows configured to maintain a vacuum integrity of a portion of an internal volume between the substrate support and the bottom bowl, the first bellows circumscribing a support shaft to define a passage and coupled to the radially outward edge of the substrate support, wherein the passage is radially surrounding the first bellows, and wherein the internal volume comprises the processing volume and the purge volume; the passage positioned above the first equalizer hole, coupled to the processing volume via an inlet, and coupled to the purge volume via the first equalizer hole; and a second bellows disposed in the purge volume, wherein the purge volume is defined by the second bellows, the chamber base, the bottom bowl, and the sidewalls; a baffle disposed in the purge volume at a height above the purge port, wherein the baffle is configured to deflect a trajectory of the purge gas entering the purge volume; wherein the baffle is configured to reduce a velocity of the purge gas at the first equalizer hole to less than 20 percent of the velocity of a purge gas jet at the purge port.

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What does patent US12183553B2 cover?
The present disclosure generally relates to an apparatus for improving azimuthal uniformity of a pressure profile of a processing gas. In one example, a processing chamber includes a lid, sidewalls, and a substrate support defining a processing volume. A bottom bowl, a chamber base, and a wall define a purge volume. The purge volume is disposed beneath the processing volume. The bottom bowl inc…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification C23C16/45591. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 31 2024 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).