Embedded bridge die with through-silicon vias

Patent metadata

Field	Value
Publication number	US-12159813-B2
Application number	US-202318111329-A
Country	US
Kind code	B2
Filing date	Feb 17, 2023
Priority date	Jun 30, 2017
Publication date	Dec 3, 2024
Grant date	Dec 3, 2024

Abstract

An integrated circuit (IC) package comprising a-substrate having a first side and an opposing a second side, and a bridge die within the substrate. The bridge die comprises a plurality of vias extending from a first side to a second side of the bridge die. The bridge die comprises a first plurality of pads on the first side of the bridge die and a second plurality of pads on the second side. The plurality of vias interconnect ones of the first plurality of pads to ones of the second plurality of pads. The bridge die comprises an adhesive film over a layer of silicon oxide on the second side of the bridge die.

First claim

We claim:

1. An apparatus, comprising:
a package substrate comprising a plurality of subsurface metallization structures in a dielectric layer, the dielectric layer intervening between neighboring ones of the plurality of subsurface metallization structures;
a bridge die in a cavity of the package substrate, the bridge die over the plurality of subsurface metallization structures, and the bridge die having vias between a bottom side and a top side of the bridge die, one of the vias electrically coupled to one of the plurality of subsurface metallization structures;
a first via in the package substrate, the first via outside of the bridge die and laterally spaced apart from a first sidewall of the bridge die, wherein the first via has an uppermost surface above the top side of the bridge die; and
a second via in the package substrate, the second via outside of the bridge die and laterally spaced apart from a second sidewall of the bridge die, wherein the second via has an uppermost surface above the top side of the bridge die, the second sidewall of the bridge die laterally opposite the first sidewall of the bridge die.

2. The apparatus of claim 1 , wherein the vias of the bridge die extend from the bottom side to the top side of the bridge die.

3. The apparatus of claim 1 , wherein the one of the vias is electrically coupled to the one of the plurality of subsurface metallization structures by a solder joint.

4. The apparatus of claim 1 , further comprising:
a first die over the package substrate, the first die electrically coupled to the bridge die and to the first via.

5. The apparatus of claim 4 , further comprising:
a second die over the package substrate and laterally spaced apart from the first die, the second die electrically coupled to the bridge die and to the second via.

6. The apparatus of claim 5 , wherein the first die is electrically coupled to the second die by the bridge die.

7. The apparatus of claim 1 , wherein the first via has a bottommost surface above the bottom side of the bridge die.

8. The apparatus of claim 1 , wherein the bridge die is in the dielectric layer.

9. The apparatus of claim 8 , wherein the first via and the second via are in the dielectric layer.

10. An apparatus, comprising:
a substrate comprising a plurality of metallization structures in a dielectric layer, the dielectric layer intervening between neighboring ones of the plurality of metallization structures;
a bridge die embedded within the substrate, the bridge die vertically over the plurality of metallization structures, and the bridge die having vias extending therein, one of the vias vertically over and coupled to one of the plurality of metallization structures;
a first via in the substrate, the first via outside of the bridge die and laterally spaced apart from the bridge die along a first direction, wherein the first via has an uppermost surface above a top side of the bridge die; and
a second via in the substrate, the second via outside of the bridge die and laterally spaced apart from the bridge die along a second direction, wherein the second via has an uppermost surface above the top side of the bridge die, the second direction opposite the first direction.

11. The apparatus of claim 10 , wherein the vias of the bridge die extend entirely through the bridge die.

12. The apparatus of claim 10 , wherein the one of the vias is coupled to the one of the plurality of metallization structures by a solder joint.

13. The apparatus of claim 10 , further comprising:
a first die coupled to the bridge die and to the first via, and a second die coupled to the bridge die and to the second via.

14. An apparatus, comprising:
a substrate comprising a plurality of subsurface metallization structures in a dielectric layer, the dielectric layer intervening between neighboring ones of the plurality of subsurface metallization structures;
a bridge die in the substrate in a region above the plurality of subsurface metallization structures, the bridge die having a top side opposite a bottom side, and a first sidewall and a second sidewall between the top side and the bottom side, the second sidewall laterally opposite from the first sidewall, and the bridge die having vias between the bottom side and the top side of the bridge die, one of the vias electrically coupled to one of the plurality of subsurface metallization structures;
a first via in the substrate, the first via outside of the bridge die and laterally spaced apart from the first sidewall of the bridge die along a first direction, wherein the first via has an uppermost surface above the top side of the bridge die; and
a second via in the substrate, the second via outside of the bridge die and laterally spaced apart from the second sidewall of the bridge die along a second direction, wherein the second via has an uppermost surface above the top side of the bridge die, the second direction opposite the first direction.

15. The apparatus of claim 14 , wherein the vias of the bridge die extend from the bottom side to the top side of the bridge die.

16. The apparatus of claim 14 , wherein the one of the vias is electrically coupled to the one of the plurality of subsurface metallization structures by a solder joint.

17. The apparatus of claim 14 , further comprising:
a first die over the substrate, the first die coupled to the bridge die and to the first via.

18. The apparatus of claim 17 , further comprising:
a second die over the substrate and laterally spaced apart from the first die, the second die coupled to the bridge die and to the second via.

Assignees

• Intel Corp

Inventors

• Vaidya Aditya S
• Mahajan Ravindranath V
• Raorane Digvijay A
• Start Paul R

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/401

  characterised by multiple insulating or insulated package substrates, interposers or RDLs · CPC title

• H10W90/00 Primary

  Package configurations · CPC title

• H10W72/90

  Bond pads, in general · CPC title

• H10W72/073

  of die-attach connectors · CPC title