Method for producing wafers with modification lines of defined orientation

Patent metadata

Field	Value
Publication number	US-12159805-B2
Application number	US-201816606586-A
Country	US
Kind code	B2
Filing date	Jan 15, 2018
Priority date	Apr 20, 2017
Publication date	Dec 3, 2024
Grant date	Dec 3, 2024

Abstract

The present invention therefore relates to a method for separating at least one solid body layer ( 2 ) from a donor substrate ( 1 ). According to the invention, the method preferably comprises at least the steps of: providing the donor substrate ( 1 ), wherein the donor substrate ( 1 ) has crystal lattice planes ( 6 ) which are inclined in relation to a planar main surface ( 8 ), wherein the main surface ( 8 ) delimits the donor substrate ( 1 ) in the longitudinal direction of the donor substrate ( 1 ) on one side, wherein a crystal lattice plane normal is inclined in relation to a main surface normal in a first direction, providing at least one laser, introducing laser radiation of the laser into the interior of the donor substrate ( 1 ) via the main surface ( 8 ) for changing the material properties of the donor substrate ( 1 ) in the region of at least one laser focus, wherein the laser focus is formed by laser beams of the laser which are emitted by the laser, wherein the change in the material property by changing the point of entry of the laser radiation into the donor substrate ( 1 ) forms a linear shape ( 103 ), wherein the changes in the material property are generated on at least one generating plane ( 4 ), wherein the crystal lattice planes ( 6 ) of the donor substrate ( 1 ) are oriented in an inclined manner in relation to the generating plane ( 4 ), wherein the linear design ( 103 ) is inclined in relation to a sectional line ( 10 ) which is produced at the interface between the generating plane ( 4 ) and the crystal lattice plane ( 6 ), wherein, owing to the changed material property, the donor substrate ( 1 ) tears in the form of subcritical cracks, separating the solid body layer ( 2 ) by introducing an external force into the donor substrate ( 1 ) for connecting the subcritical crack or so much material on the generating plane ( 4 ) being changed by means of the laser radiation that the solid body layer ( 2 ) becomes detached from the donor substrate ( 1 ) with connection of the subcritical crack.

First claim

The invention claimed is:

1. A method of modifying a solid-state body, comprising:
providing a donor substrate having crystal lattice planes inclined relative to a planar main surface, wherein the main surface delimits the donor substrate in a longitudinal direction of the donor substrate on one side, wherein a crystal lattice plane normal is inclined in a first direction relative to a main surface normal,
providing at least one laser;
introducing laser radiation from the at least one laser into an interior of the donor substrate via the main surface, to change one or more material properties of the donor substrate in a region of at least one laser focus, wherein the at least one laser focus is formed by laser beams from the laser emitted by the at least one laser; and
changing a site of penetration of the laser radiation into the donor substrate to form a linear design,
wherein the change in the one or more material properties is generated in at least one generation plane,
wherein the site of penetration of the laser radiation is changed such that the linear design is inclined at least in sections relative to a cutting line that arises at a point of intersection between the generation plane and the crystal lattice planes,
wherein the crystal lattice planes of the donor substrate are in an inclined alignment relative to the at least one generation plane.

2. The method of claim 1 , wherein the linear design is generated here in arc form or in curved form.

3. The method of claim 1 , wherein at a start of the linear design, the linear design is generated at a first angle to the cutting line, wherein in a middle of the linear design, the linear design is generated at a second angle to the cutting line, and wherein at an end of the linear design, the linear design is generated at a third angle to the cutting line.

4. The method of claim 1 , wherein the change in the one or more material properties causes tearing of the donor substrate in the form of subcritical cracks, the method further comprising:
removing a solid-state layer from the donor substrate by introducing an external force into the donor substrate to connect the subcritical cracks or so much material in the at least one generation plane is changed by the laser radiation such that the solid-state layer detaches from the donor substrate with connection of the subcritical cracks,
wherein the linear design is inclined at least in sections relative to the cutting line in an angle range between 3° and 87°.

5. The method of claim 1 , wherein the laser radiation is generated with pulse lengths of less than 5 ns, wherein the laser radiation is generated with pulse energies between 100 nJ and 1 mJ, and wherein subcritical cracks are generated with a crack length between 10 μm and 100 μm.

6. The method of claim 1 , wherein multiple donor substrates, during the change in the one or more material properties, are simultaneously disposed alongside one another on a rotating device and are rotatable about a common axis of rotation, and wherein the speed of rotation is greater than 10 revolutions/minute.

7. The method of claim 6 , wherein a beamforming device is provided to change one or more properties of the incident laser radiation, and wherein the donor substrate is exposed to a circularly or elliptically polarized laser radiation in the form of quarter-wave plates from the beamforming device.

8. The method of claim 1 , wherein the donor substrate comprises silicon carbide, and wherein the change in the one or more material properties is a predetermined physical transformation of the silicon carbide in the donor substrate to silicon and carbon.

9. The method of claim 1 , further comprising:
generating an external force by disposing a polymer material on the main surface, the polymer material having a glass transition temperature of below 20° C.; and
cooling the polymer material to a temperature below the glass transition temperature,
wherein the glass transition that takes place generates mechanical stresses in the donor substrate,
wherein the mechanical stresses join subcritical cracks within the donor substrate to one another such that a solid-state layer detaches from the donor substrate.

10. The method of claim 1 , further comprising:
moving the donor substrate relative to the at least one laser; and
adjusting the at least one laser for defined focusing of the laser radiation and/or for adjustment of the laser energy continuously as a function of at least one parameter.

11. The method of claim 1 , wherein multiple first linear designs are generated, wherein each linear design generates a subcritical crack or multiple subcritical cracks, wherein the subcritical cracks of the first linear designs are spaced apart at a defined distance such that the subcritical cracks do not overlap in an axial direction of the donor substrate, and after generation of the first linear designs, wherein at least one further linear design in each case is generated by laser beams.

12. The method of claim 1 , wherein the donor substrate has a hexagonal crystal lattice with wurtzite structure or corundum structure, wherein the linear design is generated in the wurtzite structure at an angle between 25° and 35° or in the corundum structure at an angle between 10° and 60°, relative to the cutting line, and wherein the crystal lattice planes are slip planes of the donor substrate.

13. The method of claim 1 , wherein the donor substrate has a cubic crystal lattice, wherein the linear design is generated in a monoclinic cubic structure at an angle between 17.5° and 27.5 relative to the cutting line, and wherein the crystal lattice planes are slip planes of the donor substrate.

14. The method of claim 1 , wherein the donor substrate has a triclinic crystal lattice structure, wherein the linear design is generated at a predetermined angle of 5° to 50 relative to the cutting line, and wherein the crystal lattice planes are slip planes of the donor substrate.

15. The method of claim 1 , wherein the donor substrate has a zincblende crystal structure, and wherein the linear design is generated in gallium arsenide at a predetermined angle between 18° and 27° or in indium phosphide between 18 and 27° relative to the cutting line, and wherein the crystal lattice planes are slip planes of the donor substrate.

16. The method of claim 1 , wherein the laser beam penetrates into the donor substrate via a planar surface of the donor substrate, wherein the laser beam is inclined relative to the planar surface of the donor substrate such that the laser beam enters the donor substrate at an angle other than 0° or 180° to a longitudinal axis of the donor substrate, and wherein the laser beam is focused to generate the change in the one or more material properties of the donor substrate or by removing material from the donor substrate proceeding from a surface extending in a circumferential direction of the donor substrate in a direction of a center of the donor substrate.

17. The method of claim 1 ,
wherein the change in the one or more material properties of the donor substrate define at least one detachment region,
wherein the at least one detachment region defines at least a three-dimensional outline or multiple changes are generated to form an uneven detachment region within the solid-state body, wherein the changes are generated as a function of preset parameters,
wherein the preset parameters describe a relationship between a deformation of the solid-state body as a function of a defined further treatment of the solid-state body,
wherein a first parameter is an

Assignees

• Siltectra Gmbh

Inventors

• Swoboda Marko
• Rieske Ralf
• Beyer Christian
• Richter Jan

Classifications

• H10P95/112 Primary

  leaving a reusable substrate, e.g. epitaxial lift off · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P90/12

  Preparing bulk and homogeneous wafers · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H10D62/8325

  Silicon carbide · CPC title