Systems and methods for laser splitting and device layer transfer

Patent metadata

Field	Value
Publication number	US-2016336233-A1
Application number	US-201514968685-A
Country	US
Kind code	A1
Filing date	Dec 14, 2015
Priority date	Feb 26, 2012
Publication date	Nov 17, 2016
Grant date	—

Abstract

Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

First claim

What is claimed is:

1 . A method to split and separate a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer, using laser irradiation on the side opposite to the one containing said devices.

2 . A method to transfer a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic components, from the donor wafer to another substrate, where the separation semiconductor layer to be irradiated by focusing the permeable laser is inserted with the wider bad gap semiconducting material.

Assignees

• Solexel Inc

Inventors

• Yonehara Takao
• Rana Virendra V
• Seutter Sean M
• Moslehi Mehrdad M
• Tamilmani Subramanian

Classifications

• B23K26/53

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• B23K26/082

  Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head · CPC title

• B81C1/0038

  Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373 · CPC title

• B81C2201/0192

  by cleaving the carrier wafer · CPC title