Method of manufacturing a semiconductor device and pattern formation method

Patent metadata

Field	Value
Publication number	US-12159787-B2
Application number	US-202117316221-A
Country	US
Kind code	B2
Filing date	May 10, 2021
Priority date	Jul 2, 2020
Publication date	Dec 3, 2024
Grant date	Dec 3, 2024

Abstract

In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula M a R b X c , where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1≤a≤2, b≥1, c≥1, and b+c≤4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer over a target layer to be patterned,
wherein the forming the photoresist layer comprises:
combining a first precursor and a second precursor in a vapor state to form a photoresist material,
wherein the first precursor is an organometallic having a formula:
M a R b X c

where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te,
R is an alkyl group that is substituted by one or more of electron-donating groups (EDG) or electron-withdrawing groups (EWG),
X is a halide or sulfonate group,
1≤a≤2, b≥1, c≥1, and b+c≤4, and
the first precursor is a dimer connected by NH or O, and
the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine; and
depositing the photoresist material over the target layer to be patterned;

selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern.

2. The method according to claim 1 , wherein R is a C1-C20 alkyl group, including all isomers of C1-C20 alkyl groups, substituted with an electron-donating group selected from one or more of the following —O − , —NH 2 , —NHR1, —NR1 2 , —OH, —OR1, —NHCOR1, —SH, —SR1, phenyl group, and —(C═O)O—, where R1=C1-C4 groups or phenyl groups.

3. The method according to claim 1 , wherein R is a C1-C20 alkyl group, including all isomers of C1-C20 alkyl groups, substituted with an electron-withdrawing group selected from one or more of —I, —Cl, —Br, —F, —NR2 3 +, —NO 2 , —SO 3 H, —SO 2 R2, —CN, —CHO, —COR2, —CO 2 H, —CO 2 R2, —CONH 2 , —CONHR2, and —CONR2 2 , where R2=C1-C4 groups or phenyl groups.

4. The method according to claim 1 , wherein R is one or more C1-C4 alkyl groups substituted with a phenyl group, —NH 2 , —NHR3, —NR3 2 , —OH, —OR3, where R3=C1-C3 alkyl group or a phenyl group.

5. The method according to claim 1 , wherein R is one or more C1-C4 alkyl groups substituted at the α-C position by one or two phenyl groups, —NH 2 , —NHR4, —NR4 2 , or —OR4, where R4=C1-C3 alkyl group.

6. The method according to claim 1 , wherein the actinic radiation is extreme ultraviolet radiation.

7. The method according to claim 1 , further comprising after selectively exposing the photoresist layer to actinic radiation to form a latent pattern and before developing the latent pattern, post-exposure baking the photoresist layer.

8. The method according to claim 1 , wherein the photoresist material is deposited over the target layer to be patterned by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

9. The method according to claim 1 , further comprising after selectively exposing the photoresist layer to actinic radiation to form a latent pattern and before developing the latent pattern, heating the photoresist layer at a temperature ranging from 150° C. to 230° C.

10. The method according to claim 1 , wherein the developer is a dry developer.

11. The method according to claim 1 , further comprising before selectively exposing the photoresist layer to actinic radiation to form a latent pattern, heating the photoresist layer at a temperature ranging from 40° C. to 120° C.

12. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer over a target layer to be patterned,
wherein the forming the photoresist layer comprises:
combining a first precursor and a second precursor in a vapor state to form a photoresist material,
wherein the first precursor is an organometallic having a formula:
MR 2 X 2 —NH−MR 2 X 2

where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te,
R is an alkyl group that is substituted by one or more of electron-donating groups (EDG) or electron-withdrawing groups (EWG),
X is a halide or sulfonate group, and
the second precursor is one or more selected from the group consisting of water, an amine, a borane, and a phosphine; and
depositing the photoresist material over the target layer to be patterned;

selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern.

13. The method according to claim 12 , wherein the second precursor is ammonia.

14. The method according to claim 12 , further comprising after selectively exposing the photoresist layer to actinic radiation to form a latent pattern and before developing the latent pattern, heating the photoresist layer at a temperature ranging from 150° C. to 230° C.

15. The method according to claim 12 , wherein the photoresist material is deposited over the target layer to be patterned by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

16. A method of manufacturing a semiconductor device, comprising:
forming a photoresist layer over a target layer to be patterned,
wherein the forming the photoresist layer comprises:
combining a first precursor and a second precursor in a vapor state to form a photoresist material,
wherein the first precursor is an organometallic having a formula:
MRX 3 −O−MRX 3

where M includes one or more of Sn, Bi, Sb, In, or Te,
R is an alkyl group that is substituted by one or more of electron-donating groups (EDG) or electron-withdrawing groups (EWG), and
X is a halide or sulfonate group, and
the second precursor includes one or more of water, an amine, a borane, or a phosphine; and
depositing the photoresist material over the target layer to be patterned;

selectively exposing the photoresist layer to actinic radiation to form a latent pattern; and
developing the latent pattern by applying a developer to the selectively exposed photoresist layer to form a pattern.

17. The method according to claim 16 , wherein the second precursor is water vapor.

18. The method according to claim 16 , further comprising after selectively exposing the photoresist layer to actinic radiation to form a latent pattern and before developing the latent pattern, heating the photoresist layer at a temperature ranging from 150° C. to 230° C.

19. The method according to claim 16 , wherein the photoresist material is deposited over the target layer to be patterned by atomic layer deposition (ALD) or chemical vapor deposition (CVD).

20. The method according to claim 16 , wherein the second precursor is ammonia.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Chih-Cheng
• Weng Ming-Hui
• Li Jr-Hung
• Cheng Yahru
• Yang Chi-Ming
• Lee Tze-Liang
• Chang Ching-Yu

Classifications

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/042

  using masks · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title