Device to control uniformity of extracted ion beam

Patent metadata

Field	Value
Publication number	US-12154753-B2
Application number	US-202117473101-A
Country	US
Kind code	B2
Filing date	Sep 13, 2021
Priority date	Sep 13, 2021
Publication date	Nov 26, 2024
Grant date	Nov 26, 2024

Abstract

An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.

First claim

What is claimed is:

1. An ion source, comprising:
a chamber comprising a first end, a second end and a plurality of walls connecting the first end and the second end, wherein one of the plurality of walls is an extraction plate having an extraction aperture having a width greater than its height; and
a plasma generator to generate a plasma within the chamber;
wherein one of the plurality of walls, different from the extraction plate, is a protruding wall, having a protrusion extending toward an interior of the chamber, such that the protrusion causes a thickness of the protruding wall to vary as a function of position in a width direction.

2. The ion source of claim 1 , wherein the protrusion extends at least 3 mm into the chamber at at least one location.

3. The ion source of claim 1 , wherein the protrusion comprises a constant radius of curvature from the first end to the second end.

4. The ion source of claim 1 , wherein the protrusion comprises a triangular shape.

5. The ion source of claim 1 , wherein the protrusion comprises a trapezoidal shape.

6. The ion source of claim 1 , wherein the protruding wall is opposite the extraction plate.

7. The ion source of claim 1 , wherein the protruding wall is adjacent to the extraction plate.

8. The ion source of claim 1 , wherein the plasma generator comprises an indirectly heated cathode disposed at the first end.

9. The ion source of claim 1 , wherein a maximum thickness of the protrusion occurs at a center of the extraction aperture in the width direction.

10. An ion source, comprising:
a chamber comprising a first end, a second end, and a cylindrical housing connecting the first end and the second end, wherein an extraction aperture having a width greater than its height is disposed on the cylindrical housing; and
a plasma generator to generate a plasma within the chamber;
wherein a protrusion extends from the cylindrical housing toward an interior of the chamber, such that the protrusion causes a thickness of the cylindrical housing to vary as a function of position in a width direction.

11. The ion source of claim 10 , wherein the protrusion is disposed on the cylindrical housing opposite the extraction aperture so as to be offset from the extraction aperture by 180°.

12. The ion source of claim 10 , wherein the protrusion is offset from the extraction aperture by 90°.

13. The ion source of claim 10 , wherein the plasma generator comprises an indirectly heated cathode disposed at the first end.

14. The ion source of claim 10 , wherein a maximum thickness of the protrusion occurs at a center of the extraction aperture in the width direction.

Assignees

• Applied Materials Inc

Inventors

• Scheuer Jay T
• Wright Graham
• Kurunczi Peter F
• Likhanskii Alexandre

Classifications

• H01J37/3171

  for ion implantation · CPC title

• H01J2237/0815

  Methods of ionisation · CPC title

• H01J2237/06308

  Thermionic sources · CPC title

• H05K2203/163

  Monitoring a manufacturing process · CPC title

• H05K3/06

  the conductive material being removed chemically or electrolytically, e.g. by photo-etch process {(semi-additive methods H05K3/108)} · CPC title