Wireless receiver

Patent metadata

Field	Value
Publication number	US-12149211-B2
Application number	US-202217883580-A
Country	US
Kind code	B2
Filing date	Aug 8, 2022
Priority date	Nov 4, 2016
Publication date	Nov 19, 2024
Grant date	Nov 19, 2024

Abstract

A low noise amplifier (LNA) includes a pair of n-type transistors, each configured to provide a first transconductance; a pair of p-type transistors, each configured to provide a second transconductance; a first pair of coupling capacitors, cross-coupled between the pair of n-type transistors, and configured to provide a first boosting coefficient to the first transconductance; and a second pair of coupling capacitors, cross-coupled between the pair of p-type transistors, and configured to provide a second boosting coefficient to the second transconductance, wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.

First claim

What is claimed is:

1. A low noise amplifier (LNA), comprising:
a first transistor configured to provide a first transconductance; and
a second transistor configured to provide a second transconductance; and
a common-mode feedback circuit (CMFC) coupled to respective drains of the first and second transistors, wherein the common-mode feedback circuit comprises:
an amplifier;
a first resistor having a first end coupled to a first input of the amplifier and a second end, opposite the first end, coupled to the drain of the first transistor, wherein an output of the amplifier is coupled to respective gates of the first and second transistors; and
a second resistor having a third end coupled to the first input of the amplifier and a fourth end, opposite the third end, coupled to the drain of the second transistor.

2. The LNA of claim 1 , wherein the first and second transistors are each a p-type metal-oxide-semiconductor field-effect-transistor (MOSFET).

3. The LNA of claim 1 , further comprising:
a third transistor having a drain coupled to the CMFC; and
a fourth transistor having a drain coupled to the CMFC.

4. The LNA of claim 3 , wherein the third and fourth transistors are each an n-type MOSFET.

5. The LNA of claim 1 , further comprising:
a first inductor coupled between source ends of the third and fourth transistors and ground; and
a second inductor coupled between source ends of the first and second transistors and a supplied voltage of the LNA.

6. The LNA of claim 5 , wherein the first and second inductors comprise first and second conductive coils, respectively, and wherein the first and second conductive coils share a common lumen and are interleaved with each other.

7. The LNA of claim 5 , wherein respective drain ends of the first and second transistors are coupled to a common node.

8. The LNA of claim 1 , wherein the common-mode feedback circuit is configured to provide a stable voltage to the drain end of the second transistor.

9. The LNA of claim 1 , wherein the LNA is configured to use a sum of the first and second transconductances to amplify an input signal, and wherein respective source ends of the first and second transistors are coupled to a blocking capacitor.

10. A low noise amplifier (LNA), comprising:
a first pair of transistors each configured to provide a first transconductance;
a second pair of transistors each configured to provide a second transconductance;
a first inductor coupled between source ends of the first pair of transistors;
a second inductor coupled between source ends of the second pair of transistors;
a first blocking capacitor coupled between a source end of a first transistor of the first pair of transistors and a source end of a first transistor of the second pair of transistors; and
a second blocking capacitor coupled between a source end of a second transistor of the first pair of transistors and a source end of a second transistor of the second pair of transistors,
wherein the LNA is configured to use a sum of the first and second transconductances to amplify an input signal.

11. The LNA of claim 10 , wherein the LNA provides a boosted effective transconductance that is about twice a sum of the first and second transconductances.

12. The LNA of claim 10 , wherein first and second boosting coefficients are each about two.

13. The LNA of claim 10 , further comprising:
a first pair of coupling capacitors configured to provide a first boosting coefficient to the first transconductance; and
a second pair of coupling capacitors, cross-coupled between the second pair of transistors, and configured to provide a second boosting coefficient to the second transconductance,
wherein the LNA is configured to use a boosted effective transconductance based on the first and second boosting coefficients, and the first and second transconductances to amplify an input signal.

14. The LNA of claim 13 , further comprising:
a common-mode feedback circuit comprising a first resistor and a second resistor, wherein a first end of the first resistor is coupled to a gate of a first transistor of the second pair of transistors and a second end of the first resistor is coupled to a drain of the first transistor of the second pair of transistors, and a first end of the second resistor is coupled to the gate of the first transistor and a second end of the second resistor, opposite the first end of second resistor, is coupled to a drain of a second transistor of the second pair of transistors.

15. A low noise amplifier (LNA), comprising:
a pair of n-type transistors, each configured to provide a first transconductance;
a pair of p-type transistors, each configured to provide a second transconductance; and
a common-mode feedback circuit comprising a first resistor and a second resistor, wherein a first end of the first resistor is coupled to a gate of a first transistor of the pair of p-type transistors and a second end of the first resistor is coupled to a drain of the first transistor of the pair of p-type transistors, and a first end of the second resistor is coupled to the gate of the first transistor of the pair of p-type transistors and a second end of the second resistor, opposite the first end of second resistor, is coupled to a drain of a second transistor of the-pair of p-type transistors;
a first inductor coupled between source ends of the pair of n-type transistors; and
a second inductor coupled between source ends of the pair of p-type transistors.

16. The LNA of claim 15 , wherein the first and second inductors are each formed as a first conductive coil and a second conductive coil, respectively, and the first and second conductive coils are interleaved with each other.

17. The LNA of claim 16 , further comprising:
a first blocking capacitor coupled between a source end of a first transistor of the pair of n-type transistors and a source end of the first transistor of the pair of p-type transistors.

18. The LNA of claim 16 , further comprising:
a second blocking capacitor coupled between a source end of a second transistor of the pair of n-type transistors and a source end of a second transistor of the pair of p-type transistors.

19. The LNA of claim 18 , wherein the first and second boosting coefficients are each about two.

20. The LNA of claim 15 , wherein the common-mode feedback circuit is configured to provide a stable voltage to the drain end of the second transistor of the pair of p-type transistors.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lo An-Hsun
• Chen Wen-Sheng
• Yeh En-Hsiang
• Yeh Tzu-Jin

Classifications

• H03F2203/45018

  the differential amplifier amplifying transistors have added cross couplings · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F2200/294

  the amplifier being a low noise amplifier [LNA] · CPC title

• H03F3/45475

  using IC blocks as the active amplifying circuit · CPC title

• H03F3/193

  with field-effect devices (H03F3/195 takes precedence) · CPC title