Semiconductor device

Patent metadata

Field	Value
Publication number	US-12142688-B2
Application number	US-202318240775-A
Country	US
Kind code	B2
Filing date	Aug 31, 2023
Priority date	Dec 27, 2013
Publication date	Nov 12, 2024
Grant date	Nov 12, 2024

Abstract

A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

First claim

What is claimed is:

1. A semiconductor device comprising:
a dual-gate transistor comprising:
a first oxide semiconductor film over and in contact with a first insulating film;
a first gate electrode under the first insulating film;
a second insulating film over and in contact with the first oxide semiconductor film;
a second gate electrode over the second insulating film; and
a conductive film over the first oxide semiconductor film, the conductive film electrically connected to the first oxide semiconductor film;

a single-gate transistor comprising:
a second oxide semiconductor film over and in contact with the first insulating film; and;
a gate electrode over the second oxide semiconductor film;

a third insulating film over the second gate electrode and the conductive film; and
a capacitor comprising an oxide semiconductor film,
wherein the oxide semiconductor film of the capacitor is provided over and in contact with the first insulating film, and
wherein the third insulating film is in contact with a top surface of the first oxide semiconductor film, a top surface of the second insulating film, and a top surface of the oxide semiconductor film of the capacitor.

2. The semiconductor device according to claim 1 ,
wherein the third insulating film is in contact with a top surface of the second gate electrode and a top surface of the conductive film.

3. The semiconductor device according to claim 1 ,
wherein the second gate electrode and the conductive film comprise a same material.

4. The semiconductor device according to claim 1 , further comprising a light-emitting element over the third insulating film.

5. A semiconductor device comprising:
a dual-gate transistor comprising:
a first oxide semiconductor film over and in contact with a first insulating film;
a first gate electrode under the first insulating film;
a second insulating film over and in contact with the first oxide semiconductor film;
a second gate electrode over the second insulating film; and
a conductive film over the first oxide semiconductor film, the conductive film electrically connected to the first oxide semiconductor film;

a single-gate transistor comprising:
a second oxide semiconductor film over and in contact with the first insulating film; and
a gate electrode over the second oxide semiconductor film;

a third insulating film over the second gate electrode and the conductive film; and
a capacitor comprising an oxide semiconductor film whose hydrogen concentration is larger than a hydrogen concentration of the first oxide semiconductor film,
wherein the oxide semiconductor film of the capacitor is provided over and in contact with the first insulating film, and
wherein the third insulating film is in contact with a top surface of the first oxide semiconductor film, a top surface of the second insulating film, and a top surface of the oxide semiconductor film of the capacitor.

6. The semiconductor device according to claim 5 ,
wherein the hydrogen concentration of the oxide semiconductor film of the capacitor is lower than or equal to 1×10 22 atoms/cm 3 .

7. The semiconductor device according to claim 5 ,
wherein the third insulating film is in contact with a top surface of the second gate electrode and a top surface of the conductive film.

8. The semiconductor device according to claim 5 ,
wherein the second gate electrode and the conductive film comprise a same material.

9. The semiconductor device according to claim 5 , further comprising a light-emitting element over the third insulating film.

10. A semiconductor device comprising:
a dual-gate transistor comprising:
a first oxide semiconductor film over and in contact with a first insulating film;
a first gate electrode under the first insulating film;
a second insulating film over and in contact with the first oxide semiconductor film;
a second gate electrode over the second insulating film; and
a conductive film over the first oxide semiconductor film, the conductive film electrically connected to the first oxide semiconductor film;

a third insulating film over the second gate electrode and the conductive film; and
a capacitor comprising an oxide semiconductor film whose hydrogen concentration is larger than a hydrogen concentration of the first oxide semiconductor film,
wherein the oxide semiconductor film of the capacitor is provided over and in contact with the first insulating film, and
wherein the third insulating film is in contact with a top surface of the first oxide semiconductor film, a top surface of the second insulating film, and a top surface of the oxide semiconductor film of the capacitor.

11. The semiconductor device according to claim 10 ,
wherein the hydrogen concentration of the oxide semiconductor film of the capacitor is lower than or equal to 1×10 22 atoms/cm 3 .

12. The semiconductor device according to claim 10 ,
wherein the third insulating film is in contact with a top surface of the second gate electrode and a top surface of the conductive film.

13. The semiconductor device according to claim 10 ,
wherein the second gate electrode and the conductive film comprise a same material.

14. The semiconductor device according to claim 10 , further comprising a light-emitting element over the third insulating film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koezuka Junichi
• Jintyou Masami
• Shima Yukinori
• Hamochi Takashi
• Nakazawa Yasutaka

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H10D30/6755

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title