Semiconductor device

Patent metadata

Field	Value
Publication number	US-8937307-B2
Application number	US-201313951497-A
Country	US
Kind code	B2
Filing date	Jul 26, 2013
Priority date	Aug 10, 2012
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

A semiconductor device including a capacitor with increased charge capacity and having a high aperture ratio and low power consumption is provided for a semiconductor device including a driver circuit. The semiconductor device includes a driver circuit which includes a first transistor including gate electrodes above and below a semiconductor film so as to overlap with the semiconductor film; a pixel which includes a second transistor including a semiconductor film; a capacitor which includes a dielectric film between a pair of electrodes in the pixel; and a capacitor line electrically connected to one of the pair of electrodes. In the semiconductor device, the gate electrode over the semiconductor film of the first transistor is electrically connected to the capacitor line.

First claim

What is claimed is:

1. A semiconductor device comprising:
a driver circuit which includes a first transistor including a first semiconductor film and a gate electrode;
a pixel which includes
a capacitor including a dielectric film between a pair of electrodes; and
a capacitor line electrically connected to the gate electrode and one of the pair of electrodes.

2. The semiconductor device according to claim 1 ,
wherein the pixel includes a second transistor including a second semiconductor film,
wherein the capacitor comprises a third semiconductor film on the same surface as the second semiconductor film, and
wherein the third semiconductor film is in contact with the capacitor line.

3. The semiconductor device according to claim 1 ,
wherein the pixel includes a second transistor including a second semiconductor film, and
wherein the capacitor line extends in a direction parallel to a signal line which is electrically connected to a source electrode and a drain electrode of the second transistor and is provided on the same surface as the source electrode or the drain electrode of the second transistor.

4. A semiconductor device comprising:
a driver circuit which includes a first transistor including a first semiconductor film;
a pixel which includes a second transistor including a second semiconductor film;
a capacitor which includes a dielectric film between a pair of electrodes and a pixel electrode electrically connected to the second transistor, which are in the pixel; and
a capacitor line electrically connected to one of the pair of electrodes,
wherein the first transistor includes a first gate electrode below the first semiconductor film and a second gate electrode above the first semiconductor film,
wherein the second gate electrode is electrically connected to the capacitor line,
wherein the capacitor comprises a third semiconductor film on the same surface as the second semiconductor film, and the third semiconductor film serves as the one of the pair of electrodes,
wherein the pixel electrode serves as the other of the pair of electrodes; and
wherein the dielectric film is an insulating film over the second semiconductor film.

5. The semiconductor device according to claim 4 , wherein the insulating film has a stacked-layer structure of an oxide insulating film and a nitride insulating film.

6. The semiconductor device according to claim 4 , wherein the capacitor line and the third semiconductor film are in contact with each other.

7. The semiconductor device according to claim 4 , wherein the capacitor line extends in a direction parallel to a signal line which is electrically connected to a source electrode and a drain electrode of the second transistor and is provided on the same surface as the source electrode and the drain electrode of the second transistor.

8. The semiconductor device according to claim 4 , wherein the second gate electrode is a conductive film formed using the same material as the pixel electrode.

9. The semiconductor device according to claim 4 , wherein an organic insulating film is over a region of the insulating film other than regions overlapping with the first transistor, the second transistor, and the capacitor.

10. The semiconductor device according to claim 4 , wherein a conductive film formed using the same material as a source electrode or a drain electrode of the second transistor is over an end portion of the third semiconductor film.

11. The semiconductor device according to claim 4 , wherein the second semiconductor film includes an oxide semiconductor.

12. The semiconductor device according to claim 4 , wherein the third semiconductor film includes a region having a higher conductivity than the second semiconductor film.

13. The semiconductor device according to claim 12 , wherein the third semiconductor film includes one or more selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

14. A semiconductor device comprising:
a driver circuit which includes a first transistor including a first semiconductor film;
a pixel which includes a second transistor including a second semiconductor film;
a capacitor which includes a dielectric film between a pair of electrodes and a pixel electrode electrically connected to the second transistor, which are in the pixel; and
a capacitor line electrically connected to one of the pair of electrodes,
wherein the first transistor includes a first gate electrode below the first semiconductor film and a second gate electrode above the first semiconductor film,
wherein the second gate electrode is electrically connected to the capacitor line,
wherein an insulating film which has a stacked-layer structure of an oxide insulating film and a nitride insulating film is at least over the second semiconductor film,
wherein the capacitor comprises a third semiconductor film on the same surface as the second semiconductor film, and the third semiconductor film serves as the one of the pair of electrodes,
wherein the second semiconductor film has a light-transmitting property and includes an oxide semiconductor,
wherein the third semiconductor film has a light-transmitting property and includes an oxide semiconductor,
wherein the pixel electrode serves as the other of the pair of electrodes, and
wherein the dielectric film is the nitride insulating film.

15. The semiconductor device according to claim 14 , wherein the capacitor line and the third semiconductor film are in contact with each other.

16. The semiconductor device according to claim 14 , wherein the capacitor line extends in a direction parallel to a signal line which is electrically connected to a source electrode and a drain electrode of the second transistor and is provided on the same surface as the source electrode and the drain electrode of the second transistor.

17. The semiconductor device according to claim 14 , wherein the second gate electrode is a conductive film formed using the same material as the pixel electrode.

18. The semiconductor device according to claim 14 , wherein an organic insulating film is over a region of the insulating film other than regions overlapping with the first transistor, the second transistor, and the capacitor.

19. The semiconductor device according to claim 14 , wherein a conductive film formed using the same material as a source electrode or a drain electrode of the second transistor is over an end portion of the third semiconductor film.

20. The semiconductor device according to claim 14 , wherein the first semiconductor film includes an oxide semiconductor.

21. The semiconductor device according to claim 14 , wherein the third semiconductor film includes a region having a higher conductivity than the second semiconductor film.

22. The semiconductor device according to claim 21 , wherein the third semiconductor film includes one or more selected from boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• H10D30/674

  characterised by the active materials · CPC title

• G02F1/136213 Primary

  Storage capacitors associated with the pixel electrode · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title