Semiconductor device and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-12136663-B2
Application number	US-202017437143-A
Country	US
Kind code	B2
Filing date	Mar 30, 2020
Priority date	Apr 12, 2019
Publication date	Nov 5, 2024
Grant date	Nov 5, 2024

Abstract

A semiconductor device with little variation in transistor characteristics is provided. First to third oxide films, a first conductive film, a first insulating film, and a second conductive film are sequentially formed. Shaping them into island-like shapes. An insulator is formed over the island-like shapes and an opening is formed in the insulator and a part of the island-like shapes. Another oxide film, a gate insulating film, and a gate electrode are formed in the opening in this order to form the transistor.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device, comprising:
forming a first insulator, a second insulator, and a third insulator sequentially;
forming a fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film sequentially over the third insulator;
shaping the first oxide film, the second oxide film, the third oxide film, the first conductive film, the first insulating film, and the second conductive film into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer, respectively;
removing the second conductive layer;
forming a fifth insulator over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer;
forming a sixth insulator over the fifth insulator;
forming an opening reaching the second oxide in the first oxide layer, the first conductive layer, the first insulating layer, the fifth insulator, and the sixth insulator to form a third oxide and a fourth oxide from the first oxide layer, a first conductor and a second conductor from the first conductive layer, and a seventh insulator and an eighth insulator from the first insulating layer; and
forming a fifth oxide, a ninth insulator over the fifth oxide, and a third conductor over the ninth insulator,
wherein the fifth oxide, the ninth insulator, and the third conductor are in the opening, and
wherein the fifth insulator is formed using a bias sputtering method.

2. A method of manufacturing a semiconductor device comprising:
forming a first insulator, a second insulator, and a third insulator sequentially;
forming a fourth insulator, a first oxide film, a second oxide film, a third oxide film, a first conductive film, a first insulating film, and a second conductive film sequentially over the third insulator;
shaping the first oxide film, the second oxide film, the third oxide film, the first conductive film, the first insulating film, and the second conductive film into island-like shapes to form a first oxide, a second oxide, a first oxide layer, a first conductive layer, a first insulating layer, and a second conductive layer, respectively;
removing the second conductive layer;
forming a fifth insulator over the fourth insulator, the first oxide, the second oxide, the first oxide layer, the first conductive layer, and the first insulating layer;
forming an opening reaching the second oxide in the first oxide layer, the first conductive layer, the first insulating layer, and the fifth insulator to form a third oxide and a fourth oxide from the first oxide layer, a first conductor and a second conductor from the first conductive layer, and a sixth insulator and a seventh insulator from the first insulating layer;
forming a fifth oxide, an eighth insulator over the fifth oxide, and a third conductor over the eighth insulator; and
forming a ninth insulator over the fifth insulator, the fifth oxide, the eighth insulator, and the third conductor,
wherein the fifth oxide, the eighth insulator, and the third conductor are in the opening, and
wherein the ninth insulator is formed using a bias sputtering method.

3. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the first insulator, the second insulator, and the third insulator are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

4. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the first oxide film, the second oxide film, and the third oxide film are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

5. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the first conductive film, the first insulating film, and the second conductive film are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

6. The method of manufacturing a semiconductor device according to claim 1 ,
wherein the first insulator, the second insulator, the third insulator, the first oxide film, the second oxide film, the third oxide film, the first conductive film, the first insulating film, the second conductive film, and the fifth oxide are formed using a sputtering method.

7. The method of manufacturing a semiconductor device according to claim 2 ,
wherein the first insulator, the second insulator, and the third insulator are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

8. The method of manufacturing a semiconductor device according to claim 2 ,
wherein the first oxide film, the second oxide film, and the third oxide film are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

9. The method of manufacturing a semiconductor device according to claim 2 ,
wherein the first conductive film, the first insulating film, and the second conductive film are successively formed in a reduced pressure using an apparatus including a plurality of treatment chambers.

10. The method of manufacturing a semiconductor device according to claim 2 ,
wherein the first insulator, the second insulator, the third insulator, the first oxide film, the second oxide film, the third oxide film, the first conductive film, the first insulating film, the second conductive film, and the fifth oxide are formed using a sputtering method.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Kakehata Tetsuya
• Sato Yuichi
• Shibazaki Atsushi
• Tanemura Kazuki
• Hirose Takashi

Classifications

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title