Chuck for plasma processing chamber

Patent metadata

Field	Value
Publication number	US-12131890-B2
Application number	US-202017435340-A
Country	US
Kind code	B2
Filing date	Mar 4, 2020
Priority date	Mar 8, 2019
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.

First claim

What is claimed is:

1. An electrostatic chuck system for a plasma processing chamber, comprising:
a base plate comprising Al-SiC, wherein the base plate is formed by an additive manufacturing process;
a ceramic plate disposed over the base plate; and
a bonding layer bonding the ceramic plate to the base plate.

2. The electrostatic chuck system of claim 1 , further comprising channels within the base plate.

3. The electrostatic chuck system of claim 2 , wherein the channels are temperature control channels.

4. The electrostatic chuck system of claim 1 , wherein a difference between a CTE of the base plate and a CTE of the edge ring is between 12.5-14.5 ppm/° C.

5. The electrostatic chuck system of claim 1 , wherein the edge ring comprises at least one of quartz, ceramic, plasma corrosion resistant glass, or silicon.

6. The electrostatic chuck system of claim 1 , wherein the ceramic plate comprises at least one of aluminum oxide or aluminum nitride.

7. The electrostatic chuck system of claim 1 , wherein the bonding layer comprises silicone.

8. The electrostatic chuck system of claim 7 , wherein the bonding layer further comprises thermally conductive filler material.

9. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 65% SiC by weight.

10. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 40% SiC by weight.

11. The electrostatic chuck system of claim 1 , wherein the base plate comprises Al-SiC with 18% to 30% SiC by weight.

12. The electrostatic chuck system of claim 1 , further comprising a temperature controller connected to the base plate, wherein the temperature controller is configured to heat the base plate to a temperature above 90° C. and cool the base plate to a temperature below −40° C.

13. The electrostatic chuck system of claim 1 , wherein the base plate comprises:
a top plate, wherein channels are machined into a bottom of the top plate; and
a bottom plate connected to the top plate.

Assignees

• Lam Res Corp

Inventors

• Erickson Ann
• Ehrlich Darrell

Classifications

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H01J2237/334

  Etching · CPC title

• H01J2237/2007

  Holding mechanisms · CPC title

• H01J37/32642

  Focus rings · CPC title