Apparatus for plasma processing

Patent metadata

Field	Value
Publication number	US-12119207-B2
Application number	US-202217748737-A
Country	US
Kind code	B2
Filing date	May 19, 2022
Priority date	Aug 20, 2021
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

First claim

What is claimed is:

1. An apparatus for plasma processing, the apparatus comprising:
a first resonating structure, the first resonating structure being coupled to a first RF generator through a first matching circuit; and
a second resonating structure surrounding the first resonating structure, the second resonating structure being coupled to a second RF generator through a second matching circuit.

2. The apparatus of claim 1 , wherein the first RF generator and the second RF generator are a same RF generator.

3. The apparatus of claim 1 , wherein the first resonating structure has a cylindrical shape.

4. The apparatus of claim 1 , further comprising a third resonating structure surrounding the second resonating structure.

5. The apparatus of claim 1 , wherein the first resonating structure is coupled to a ground plane through a first capacitor and the second resonating structure is coupled to the ground plane through a second capacitor.

6. The apparatus of claim 5 , wherein the first capacitor and the second capacitor are the same.

7. The apparatus of claim 1 , further comprising a shield between the first resonating structure and the second resonating structure.

8. The apparatus of claim 7 , wherein the shield is grounded.

9. The apparatus of claim 7 , wherein the shield is a floating part of a CLC circuit.

10. An apparatus for plasma processing, the apparatus comprising:
a first resonating structure, the first resonating structure creating a first zone for a first plasma influenced by the first resonating structure; and
a second resonating structure, the second resonating structure creating a second zone for a second plasma influenced by the second resonating structure, wherein the second zone surrounds the first zone.

11. The apparatus of claim 10 , wherein the second resonating structure is driven by a first frequency through a first inductive coil, the first inductive coil being in the second resonating structure.

12. The apparatus of claim 11 , wherein a radiating structure of the first resonating structure is driven by coupling with a radiating structure of the second resonating structure.

13. The apparatus of claim 11 , wherein the first resonating structure is driven by a second frequency through the first inductive coil.

14. The apparatus of claim 13 , wherein the first frequency and the second frequency are supplied concurrently.

15. The apparatus of claim 14 , wherein the first frequency and the second frequency are supplied as interleaved pulses.

16. The apparatus of claim 11 , wherein the first inductive coil is floating.

17. The apparatus of claim 11 , wherein the first resonating structure is driven by a second frequency through a second inductive coil, the second inductive coil being in the first resonating structure, the first inductive coil and the second inductive coil being coupled to an RF power source through an RF splitter.

18. The apparatus of claim 17 , wherein respective powers supplied to the first inductive coil and the second inductive coil are configurable by varying inductances or capacitances of variable components of the RF splitter.

19. An apparatus for plasma processing, the apparatus comprising:
a first cavity having a first resonant frequency, the first cavity being coupled through a first capacitor to a conductive plane; and
a second cavity having a second resonant frequency, the second cavity being surrounded by the first cavity, the second cavity being coupled through a second capacitor to the conductive plane.

20. The apparatus of claim 19 , wherein the first resonant frequency is the same as the second resonant frequency.

Assignees

• Tokyo Electron Ltd

Inventors

• Funk Merritt
• Lane Barton

Classifications

• H01J2237/334

  Etching · CPC title

• H01J37/32651

  Shields, e.g. dark space shields, Faraday shields · CPC title

• H03H7/38

  Impedance-matching networks · CPC title

• H01J37/32183 Primary

  Matching circuits · CPC title

• H01J37/32165

  Plural frequencies · CPC title