Method of forming monocrystalline nickel-titanium films on single crystal silicon substrates using seed layers

Patent metadata

Field	Value
Publication number	US-12116271-B2
Application number	US-202217819409-A
Country	US
Kind code	B2
Filing date	Aug 12, 2022
Priority date	Aug 13, 2021
Publication date	Oct 15, 2024
Grant date	Oct 15, 2024

Abstract

A method of forming a monocrystalline nitinol film on a single crystal silicon wafer can comprise depositing a first seed layer of a first metal on the single crystal silicon wafer, the first seed layer growing epitaxially on the single crystal silicon wafer in response to the depositing the first seed layer of the first metal; and depositing the monocrystalline nitinol film on a final seed layer, the monocrystalline nitinol film growing epitaxially on the final seed layer in response to the depositing the monocrystalline nitinol film. The method can form a multilayer stack for a micro-electromechanical system MEMS device.

First claim

What is claimed is:

1. A method of forming a monocrystalline nitinol film on a single crystal silicon wafer, comprising:
etching, via a hydrofluoric acid (HF) etching process, a surface of the single crystal silicon wafer;
depositing a first seed layer of a first metal on the single crystal silicon wafer, with the first seed layer growing epitaxially on the single crystal silicon wafer, wherein the first metal is iron;
depositing a second seed layer of a second metal on the first seed layer to form a final seed layer, with the second seed layer growing epitaxially on the first seed layer, wherein the second metal is chromium; and
depositing the monocrystalline nitinol film on the final seed layer, with the monocrystalline nitinol film growing epitaxially on the final seed layer to form a deposited monocrystalline nitinol film with a thickness of less than 100 nm.

2. The method of claim 1 , wherein:
the first seed layer has a first lattice mismatch with the monocrystalline nitinol film that is less than a second lattice mismatch between the monocrystalline nitinol film and the single crystal silicon wafer, and
the second seed layer has a third lattice mismatch with the monocrystalline nitinol film that is less than a fourth lattice mismatch between the monocrystalline nitinol film and the first seed layer.

3. The method of claim 1 , further comprising heating the monocrystalline nitinol film to an elevated temperature during the depositing the monocrystalline nitinol film.

4. The method of claim 1 , wherein the depositing the monocrystalline nitinol film is performed via sputtering.

5. The method of claim 1 , wherein the first seed layer has lower lattice mismatch with the monocrystalline nitinol film than the single crystal silicon wafer.

6. The method of claim 1 , wherein the first seed layer has a coincidence lattice mismatch with a 2-to-1 coincidence site lattice that is less than 10%.

7. The method of claim 6 , wherein the first seed layer has the coincidence lattice mismatch with a 2-to-1 coincidence site lattice that is less than 8%.

8. The method of claim 1 , wherein the deposited monocrystalline nitinol film is crystallized into a single crystal in response to the depositing the monocrystalline nitinol film on the final seed layer.

Assignees

• Rajagopalan Jagannathan
• Berlia Rohit
• Univ Arizona State

Inventors

• Rajagopalan Jagannathan
• Berlia Rohit

Classifications

• C30B29/68

  Crystals with laminate structure, e.g. "superlattices" · CPC title

• B81C2201/0133

  Wet etching · CPC title

• B81B2207/99

  Microstructural systems or auxiliary parts thereof not provided for in B81B2207/01 - B81B2207/115 · CPC title

• B81B7/0048

  between the MEMS die and the substrate · CPC title

• B81C2201/0177

  Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy · CPC title