Stacked structures for stretchable device, stretchable devices, methods of manufacturing the same, display panels, sensors, and electronic devices

Patent metadata

Field	Value
Publication number	US-12112866-B2
Application number	US-202117392772-A
Country	US
Kind code	B2
Filing date	Aug 3, 2021
Priority date	Sep 24, 2020
Publication date	Oct 8, 2024
Grant date	Oct 8, 2024

Abstract

A stacked structure for a stretchable device includes a stretchable layer including an elastic polymer, and a conductive layer on the stretchable layer and including a metal, wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer and the first depth region includes the metal.

First claim

What is claimed is:

1. A stacked structure for a stretchable device, the stacked structure comprising:
a stretchable layer, the stretchable layer including an elastic polymer; and
a conductive layer on the stretchable layer, the conductive layer including a metal,
wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer,
wherein metal atoms of the metal are penetrated or diffused into the elastic polymer in the first depth region such that the first depth region includes the metal, and
the metal in the first depth region is in a form of metal clusters.

2. The stacked structure of claim 1 , wherein a glass transition temperature of the elastic polymer is less than or equal to about 80° C. and greater than or equal to about −30° C.

3. The stacked structure of claim 2 , wherein
the elastic polymer is a copolymer comprising at least one hard structural unit and at least one soft structural unit, and
a weight ratio of the hard structural unit to the soft structural unit is less than about 1 and greater than or equal to about 0.01.

4. The stacked structure of claim 3 , wherein
the hard structural unit comprises a styrene structural unit, an olefin structural unit, a urethane structural unit, an ether structural unit, or a combination thereof, and
the soft structural unit comprises an ethylene structural unit, a propylene structural unit, a butylene structural unit, an isobutylene structural unit, a butadiene structural unit, an isoprene structural unit, or a combination thereof.

5. The stacked structure of claim 1 , wherein the metal comprises gold, silver, copper, chromium, rhodium, palladium, ruthenium, osmium, iridium, platinum, an alloy thereof, or a combination thereof.

6. The stacked structure of claim 1 , wherein a thickness of the first depth region is about 2 nm to about 100 nm.

7. The stacked structure of claim 1 , wherein the conductive layer has a plurality of microcracks.

8. The stacked structure of claim 1 , wherein the conductive layer is electrically connected to the metal in the first depth region of the stretchable layer.

9. A stretchable device comprising the stacked structure of claim 1 .

10. The stretchable device of claim 9 , wherein
the stretchable layer is a stretchable substrate, and
the conductive layer comprises an electrode, a wiring, or a combination thereof.

11. The stretchable device of claim 9 , wherein
the stretchable layer is a stretchable gate insulating layer, a stretchable interlayer, a stretchable passivation layer, a stretchable protective layer, a stretchable buffer layer, or a combination thereof, and
the conductive layer comprises an electrode, a wiring, or a combination thereof.

12. The stretchable device of claim 9 , further comprising:
an active layer on or under the stacked structure,
wherein the active layer comprises a light emitting layer, a light absorbing layer, a semiconductor, or a combination thereof.

13. A display panel comprising the stretchable device of claim 9 .

14. A sensor comprising the stretchable device of claim 9 .

15. An electronic device comprising the display panel of claim 13 .

16. An electronic device comprising the sensor of claim 14 .

17. A method of manufacturing the stretchable device of claim 1 , the method comprising:
preparing the stretchable layer comprising the elastic polymer; and
thermally depositing the metal on the stretchable layer,
wherein the thermally depositing of the metal includes
penetrating or diffusing metal atoms of the metal into the stretchable layer to distribute the metal to a particular depth from the surface of the stretchable layer, and
stacking the metal on the stretchable layer to form the conductive layer.

18. The method of claim 17 , wherein the preparing of the stretchable layer comprises preparing a copolymer comprising at least one hard structural unit and at least one soft structural unit and having a glass transition temperature of less than or equal to about 80° C. and greater than or equal to about −30° C.

19. The method of claim 17 , wherein the thermally depositing of the metal is performed in a deposition chamber where a temperature of the deposition chamber is equal to or higher than a glass transition temperature of the elastic polymer.

20. The method of claim 17 , wherein in the thermally depositing of the metal, a temperature of the surface of the stretchable layer is equal to or higher than a glass transition temperature of the elastic polymer.

21. The method of claim 17 , wherein in the thermally depositing of the metal, a thermal deposition rate is less than or equal to about 10 Å/s and greater than or equal to about 0.001 Å/s.

22. The method of claim 21 , wherein in the thermally depositing of the metal, the thermal deposition rate is about 0.001 Å/s to about 1 Å/s.

23. The method of claim 17 , further comprising:
forming an active layer under and/or on the stretchable layer or under and/or on the conductive layer,
wherein the active layer comprises a light emitting layer, a light absorbing layer, a semiconductor, or a combination thereof.

24. The method of claim 17 , wherein
the stretchable layer is a stretchable substrate, and
the conductive layer comprises an electrode, a wiring, or a combination thereof.

25. The method of claim 17 , wherein
the stretchable layer is a stretchable gate insulating layer, a stretchable interlayer, a stretchable passivation layer, a stretchable protective layer, a stretchable buffer layer, or a combination thereof, and
the conductive layer comprises an electrode, a wiring, or a combination thereof.

Assignees

• Samsung Electronics Co Ltd

Inventors

• LEE Yeongjun
• Kim Joo Young
• Yun Youngjun
• Kang Hyun Bum
• Chung Jong Won

Classifications

• H10D86/443

  adapted for preventing breakage, peeling or short circuiting · CPC title

• H10D86/411

  characterised by materials, geometry or structure of the substrates · CPC title

• H10D86/60

  wherein the TFTs are in active matrices · CPC title

• H10D30/6758

  characterised by the insulating substrates · CPC title

• H10D30/6729

  characterised by the electrodes · CPC title