Stretchable/foldable optoelectronic device, method of manufacturing the same, and apparatus including the stretchable/foldable optoelectronic device

Patent metadata

Field	Value
Publication number	US-10090479-B2
Application number	US-201514845518-A
Country	US
Kind code	B2
Filing date	Sep 4, 2015
Priority date	Oct 2, 2014
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

Provided are a stretchable and/or foldable optoelectronic device, a method of manufacturing the same, and an apparatus including the stretchable and/or foldable optoelectronic device. A stretchable and/or foldable optoelectronic device may include an optoelectronic device portion on a substrate. The substrate may include an elastomeric polymer and may be stretchable. The optoelectronic device portion may be configured to have a wavy structure to be stretchable. The optoelectronic device portion may include a graphene layer and a quantum dot (QD)-containing layer. The stretchable and/or foldable optoelectronic device may further include a capping layer that includes an elastomeric polymer and is on the optoelectronic device portion. The stretchable and/or foldable optoelectronic device may further include a plastic material layer that contacts at least one surface of the optoelectronic device portion.

First claim

What is claimed is:

1. A stretchable optoelectronic device comprising:
a substrate that includes an elastomeric polymer and is stretchable;
an optoelectronic device portion on the substrate, the optoelectronic device portion including a graphene layer and a quantum dot (QD)-containing layer, the optoelectronic device portion being configured to have a wavy structure to be stretchable; and
a plastic material layer connected to a surface of the optoelectronic device portion, wherein
the plastic material layer is between the substrate and the optoelectronic device portion or the optoelectronic device portion is between the substrate and the plastic material layer, and
the plastic material layer has a thickness that ranges from about 0.5 μm to about 30 μm.

2. The stretchable optoelectronic device of claim 1 , further comprising:
a capping layer including an elastomeric polymer, wherein
the capping layer is stretchable, and
the capping layer is on the optoelectronic device portion.

3. The stretchable optoelectronic device of claim 2 , wherein the optoelectronic device portion is located on a mechanical neutral plane (MNP) or around a MNP.

4. The stretchable optoelectronic device of claim 2 , wherein
the elastomeric polymer of the capping layer includes at least one of polyurethane (PU), polyurethane acrylate (PUA), acrylate polymer, acrylate terpolymer, and silicon-based polymer.

5. The stretchable optoelectronic device of claim 4 , wherein the silicon-based polymer includes at least one of polydimethylsiloxane (PDMS), polyphenyl-methylsiloxane, and hexamethyldisiloxane.

6. The stretchable optoelectronic device of claim 1 , wherein the plastic material layer includes at least one of polyethylene naphthalate (PEN), polyimide (PI), and polyethylene terephthalate (PET).

7. The stretchable optoelectronic device of claim 1 , wherein
the wavy structure of the optoelectronic device portion has an average wavelength that ranges from about 10 μm to about 2 mm, and
the wavy structure of the optoelectronic device portion has an average amplitude that ranges from about 100 nm to about 1 mm.

8. The stretchable optoelectronic device of claim 1 , wherein the optoelectronic device portion is one of a light-emitting device portion, a photovoltaic device portion, and a photo-detecting device portion.

9. The stretchable optoelectronic device of claim 1 , wherein
the optoelectronic device portion includes a first electrode on the substrate, a light-emitting layer on the first electrode, and a second electrode on the light-emitting layer,
one of the first and second electrodes is an anode,
the anode includes the graphene layer, and
the light-emitting layer includes the QD-containing layer.

10. The stretchable optoelectronic device of claim 9 , wherein the optoelectronic device portion further includes at least one of:
a hole transport layer (HTL) between the anode and the light-emitting layer; and
an electron transport layer (ETL) between the light-emitting layer and a cathode from among the first and second electrodes.

11. The stretchable optoelectronic device of claim 10 , wherein the optoelectronic device portion further includes a hole injection layer (HIL) between the anode and the HTL.

12. The stretchable optoelectronic device of claim 1 , wherein the optoelectronic device portion further includes a poly(3,4-ethylenedioxythiophene) (PEDOT) layer that contacts the graphene layer.

13. The stretchable optoelectronic device of claim 1 , wherein the graphene layer is doped with a p-type dopant.

14. The stretchable optoelectronic device of claim 1 , wherein the elastomeric polymer of the substrate includes at least one of silicon-based polymer, polyurethane (PU), polyurethane acrylate (PUA), acrylate polymer, and acrylate terpolymer.

15. The stretchable optoelectronic device of claim 14 , wherein the silicon-based polymer includes at least one of polydimethylsiloxane (PDMS), polyphenyl-methylsiloxane, and hexamethyldisiloxane.

16. The stretchable optoelectronic device of claim 1 , wherein the stretchable optoelectronic device has strain that is equal to or greater than 5%.

17. The stretchable optoelectronic device of claim 1 , wherein the stretchable optoelectronic device is a foldable device.

18. An apparatus comprising:
the stretchable optoelectronic device of claim 1 ; and
a circuit connected to the stretchable optoelectronic device.

19. A light-emitting device comprising:
a first material layer that includes an elastomeric polymer;
a second material layer that faces the first material layer and includes an elastomeric polymer; and
a light-emitting device portion between the first and second material layers, the light-emitting device portion including a light-emitting layer that includes a quantum dot (QD)-containing layer, the light-emitting device portion being configured so that a light-emitting surface of the light-emitting layer is one of stretchable and foldable, wherein
the light-emitting device portion includes a first electrode, a hole transport layer (HTL), the light-emitting layer, an electron transport layer (ETL), and a second electrode that are sequentially stacked on the first material layer or the second material layer, and
the first electrode includes graphene.

20. The light-emitting device of claim 19 , wherein
the light-emitting device portion further includes a graphene layer,
the graphene layer is between the light-emitting layer and one of the first material layer and the second material layer.

21. The light-emitting device of claim 20 , further comprising:
a plastic layer between the light-emitting device portion and one of the first material layer and the second material layer,
wherein the graphene layer is between the plastic layer and the QD-containing layer.

22. The light-emitting device of claim 21 , wherein the plastic layer includes at least one of polyethylene naphthalate (PEN), polyimide (PI), and polyethylene terephthalate (PET).

23. The light-emitting device of claim 19 , wherein the light-emitting device portion is configured to have a wavy structure.

24. The light-emitting device of claim 19 , wherein the elastomeric polymer in at least one of the first material layer and the second material layer includes at least one of silicon-based polymer, polyurethane (PU), polyurethane acrylate (PUA), acrylate polymer, and acrylate terpolymer.

25. The light-emitting device of claim 24 , wherein the silicon-based polymer includes at least one of polydimethylsiloxane (PDMS), polyphenyl-methylsiloxane, and hexamethyldisiloxane.

26. An apparatus comprising:
the light-emitting device of claim 19 ; and
a circuit connected to the light-emitting device.

27. A stretchable optoelectronic device comprising:
a substrate including an elastomeric polymer that is stretchable;
an optoelectronic device portion on the substrate,
the optoelectronic device portion including a graphene layer and an active layer,
the active layer being on the graphene layer or between the graphene layer and the substrate,
the active layer including one of quantum dots, light-emitting nanomaterials, and a transition metal dichalocogenide (TMDC),
the optoelectronic device portion being configured to have a wavy structure if the substrate is not subject to a tensile stress, and
the optoelectronic device portion being configured to transition from the wavy s

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Taeho
• Kim Sangwon
• Park Seongjun
• Lee Sangmin

Classifications

• A61B5/6826

  Finger · CPC title

• A61B5/02427

  Details of sensor · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• H01L51/0037

  Electricity · mapped topic

• H01L51/5206

  Electricity · mapped topic