Systems, devices, and methods for secondary particle suppression from a charge exchange device
US-2021345476-A1 · Nov 4, 2021 · US
US12106925B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12106925-B2 |
| Application number | US-202117560632-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2021 |
| Priority date | Dec 23, 2021 |
| Publication date | Oct 1, 2024 |
| Grant date | Oct 1, 2024 |
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An apparatus may include a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and output the ion beam as an accelerated ion beam at an accelerated ion energy. The apparatus may further include an RF source to output an RF power signal to the cyclotron chamber, the RF power source comprising a variable power amplifier, and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions.
Opening claim text (preview).
The invention claimed is: 1. An apparatus, comprising: a cyclotron to receive an ion beam as an incident ion beam at an initial energy, and to output the ion beam as an accelerated ion beam at an accelerated ion energy; an RF source to output an RF power signal to the cyclotron, the RF power source comprising a variable power amplifier; and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions; wherein the RF power signal comprises a composite signal that comprises a first signal having a first frequency and a second signal having a second frequency, the second frequency being an odd harmonic of the first frequency. 2. The apparatus of claim 1 , wherein the incident ion beam comprises a negative hydrogen ion beam, and wherein the accelerated ion beam comprises a proton beam. 3. The apparatus of claim 1 , the cyclotron further comprising: a cyclotron chamber, wherein the movable stripper is translatable within the cyclotron chamber to intercept a plurality of cyclotron orbits, located at a plurality of radial positions with respect to a central axis of the cyclotron. 4. The apparatus of claim 3 , the cyclotron further comprising a cyclotron magnet, interoperative with the RF source to generate the plurality of cyclotron orbits, wherein the plurality of cyclotron orbits are characterized by an orbit separation, between adjacent cyclotron orbits, and wherein a beam diameter of the ion beam is less than or equal to a smallest value of the orbit separation for the plurality of cyclotron orbits. 5. The apparatus of claim 1 , further comprising a cyclotron magnet, the cyclotron magnet comprising a circular configuration having four high field regions, and a plurality of low field regions, alternately disposed between the high field regions along a circular arc. 6. The apparatus of claim 5 , further comprising a first energized dee, disposed in a first low field region of the plurality of low field regions, and a second energized dee, disposed in a second low field region of the plurality of low field regions, opposite the first low field region, the first energized dee and the second energized dee being coupled to receive the RF power signal. 7. The apparatus of claim 6 , wherein the first energized dee and the second energized dee are individually arranged to occupy an arc portion of approximately 45 degrees. 8. An ion implanter, comprising: an ion source to generate a negative ion beam, the negative ion beam having an initial ion energy; a cyclotron to receive the negative ion beam as an incident ion beam at an incident ion energy, and output the negative ion beam as a positive ion beam at an accelerated ion energy; an RF power source to output an RF power signal to the cyclotron, the RF power source comprising a variable power amplifier; and a movable stripper, translatable to intercept the ion beam within the cyclotron at a continuum of different positions; wherein the RF power signal comprises a composite signal that comprises a first signal having a first frequency and a second signal having a second frequency, the second frequency being an odd harmonic of the first frequency. 9. The ion implanter of claim 8 , the cyclotron further comprising: a cyclotron chamber, wherein the movable stripper is translatable within the cyclotron chamber to intercept a plurality of cyclotron orbits, located at a plurality of radial positions with respect to a central axis of the cyclotron. 10. The ion implanter of claim 9 , the cyclotron further comprising a cyclotron magnet, interoperative with the RF source to generate a plurality of cyclotron orbits, characterized by an orbit separation, between adjacent cyclotron orbits, wherein a beam diameter of the ion beam is less than or equal to a smallest value of the orbit separation for the plurality of cyclotron orbits. 11. The ion implanter of claim 8 , further comprising a cyclotron magnet, the cyclotron magnet comprising a circular configuration having four high field regions, and a plurality of low field regions, alternately disposed between the high field regions along a circular arc. 12. The ion implanter of claim 11 , further comprising a first energized dee, disposed in a first low field region of the plurality of low field regions, and a second energized dee, disposed in a second low field region of the plurality of low field regions, opposite the first low field region, the first energized dee and the second energized dee being coupled to receive the RF power signal. 13. The ion implanter of claim 12 , wherein the first energized dee and the second energized dee are individually arranged to occupy an arc portion of approximately 45 degrees. 14. The ion implanter of claim 8 , wherein the incident ion energy is between 10 keV and 100 keV, and wherein the RF power signal comprises a peak voltage of 25 kV to 100 kV. 15. A method of generating a high energy ion beam, comprising; generating a negative ion beam having an initial ion energy; accelerating the negative ion beam in a cyclotron chamber of a cyclotron; stripping the negative ion beam to generate a positive ion beam, by placing a movable stripper at a predetermined orbit in the cyclotron chamber; and adjusting an amplitude of an RF voltage that is applied to the cyclotron; wherein accelerating the negative ion beam comprises applying an RF power signal to a pair of dees in the cyclotron, wherein the RF power signal comprises a composite signal that comprises a first signal having a first frequency and a second signal having a second frequency, the second frequency being an odd harmonic of the first frequency. 16. The method of claim 15 , wherein the initial ion energy is between 10 keV and 100 keV, and wherein the RF power signal is supplied at a peak voltage of 25 kV to 100 kV. 17. The method of claim 15 , wherein the movable stripper is translatable to intercept the negative ion beam within the cyclotron at a continuum of different positions, a monoenergetic positive ion beam is generated at a continuously adjustable ion energy.
with an applied axial magnetic field · CPC title
accelerating · CPC title
for ion implantation · CPC title
Cyclotrons · CPC title
Negative ion sources · CPC title
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