Systems and methods for using electrical asymmetry effect to control plasma process space in semiconductor fabrication

Patent metadata

Field	Value
Publication number	US-9644271-B1
Application number	US-201615154715-A
Country	US
Kind code	B1
Filing date	May 13, 2016
Priority date	May 13, 2016
Publication date	May 9, 2017
Grant date	May 9, 2017

Abstract

Systems and methods are disclosed for plasma enabled film deposition on a wafer in which a plasma is generated using radiofrequency signals of multiple frequencies and in which a phase angle relationship is controlled between the radiofrequency signals of multiple frequencies. In the system, a pedestal is provided to support the wafer. A plasma generation region is formed above the pedestal. An electrode is disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals into the plasma generation region. A radiofrequency power supply provides multiple radiofrequency signals of different frequencies to the electrode. A lowest of the different frequencies is a base frequency, and each of the different frequencies that is greater than the base frequency is an even harmonic of the base frequency. The radiofrequency power supply provides for variable control of the phase angle relationship between each of the multiple radiofrequency signals.

First claim

What is claimed is:

1. A method for performing a plasma process to deposit a film on a wafer, comprising:
positioning the wafer on a top surface of a pedestal in exposure to a plasma generation region;
supplying a process gas composition to the plasma generation region, the process gas composition including oxygen and at least one bombardment gas;
generating radiofrequency signals of at least two different frequencies, wherein a lowest of the at least two different frequencies is a base frequency, and wherein each radiofrequency signal having a frequency greater than the base frequency is in an even harmonic relationship with the radiofrequency signal of the base frequency, and wherein each radiofrequency signal having a frequency greater than the base frequency is in a fixed phase relationship with the radiofrequency signal of the base frequency;
supplying the generated radiofrequency signals to an electrode for transmission into the plasma generation region, the radiofrequency signals transforming the process gas composition into a plasma within the plasma generation region, the plasma causing deposition of the film on the wafer; and
adjusting a phase angle relationship between radiofrequency signals of each of the at least two different frequencies to control a parameter of the film deposited on the wafer.

2. The method as recited in claim 1 , further comprising:
providing a separate impedance matching for each of the generated radiofrequency signals.

3. The method as recited in claim 2 , further comprising:
combining the radiofrequency signals of at least two different frequencies onto a single output line for transmission to the electrode.

4. The method as recited in claim 3 , wherein combining the radiofrequency signals includes processing each of the radiofrequency signals to filter out signals of frequency different than that of the processed radiofrequency signal prior to transmission of the processed radiofrequency signal to the single output line.

5. The method as recited in claim 4 , wherein generating radiofrequency signals of at least two different frequencies includes generating a first radiofrequency signal having a frequency of about 13.56 MHz and generating a second radiofrequency signal having a frequency of about 27.12 MHz, and wherein controlling the phase angle relationship between radiofrequency signals of each of the at least two different frequencies includes controlling a phase angle relationship between the first radiofrequency signal and the second radiofrequency signal.

6. The method as recited in claim 1 , wherein the at least one bombardment gas includes a monoatomic noble gas.

7. The method as recited in claim 6 , wherein the at least one bombardment gas lacks vibrational or rotational molecular modes.

8. The method as recited in claim 1 , wherein the at least one bombardment gas is argon.

9. The method as recited in claim 1 , wherein the plasma process is a plasma enabled atomic layer deposition process.

10. The method as recited in claim 1 , wherein the plasma process is a plasma enabled chemical vapor deposition process.

11. The method as recited in claim 1 , wherein the parameter of the film that is controlled by adjusting the phase angle relationship between radiofrequency signals of each of the at least two different frequencies includes one or more of a density of the film, a stress of the film, a refractive index of the film, and a content of a minority material specie within the film.

12. The method as recited in claim 1 , wherein adjusting the phase angle relationship between radiofrequency signals of each of the at least two different frequencies is performed to suppress plasmoid formation within the plasma.

13. The method as recited in claim 1 , wherein the at least one bombardment gas is effective in densifying the film deposited on the wafer.

14. A system for performing a plasma process to deposit a film on a wafer, comprising:
a pedestal having a top surface configured to support the wafer;
a plasma generation region formed above the top surface of the pedestal;
a process gas supply configured to supply a process gas composition to the plasma generation region, the process gas composition including oxygen and at least one bombardment gas;
an electrode disposed in proximity to the plasma generation region to provide for transmission of radiofrequency signals from the electrode into the plasma generation region; and
a radiofrequency power supply configured to simultaneously supply multiple radiofrequency signals of different frequencies to the electrode, wherein a lowest of the different frequencies is a base frequency, and wherein each radiofrequency signal having a frequency greater than the base frequency is in an even harmonic relationship with the radiofrequency signal of the base frequency, and wherein each radiofrequency signal having a frequency greater than the base frequency is in a fixed phase relationship with the radiofrequency signal of the base frequency, the multiple radiofrequency signals having respective frequencies set to transform the process gas composition into the plasma within the plasma generation region to cause deposition of the film on the wafer, the radiofrequency power supply also including a phase controller configured to provide for variable control of a phase angle relationship between each of the multiple radiofrequency signals, wherein adjustment of the phase angle relationship is used to control a parameter of the film deposited on the wafer.

15. The system as recited in claim 14 , wherein the radiofrequency power supply includes multiple radiofrequency signal generators for respectively generating each of the multiple radiofrequency signals.

16. The system as recited in claim 15 , wherein the phase controller is connected to each of the multiple radiofrequency signal generators, the phase controller configured to provide for variable control of phase angle relationship between any pair of the multiple radiofrequency signals respectively generated by the multiple radiofrequency signal generators.

17. The system as recited in claim 15 , wherein the radiofrequency power supply includes multiple match networks respectively connected to outputs of the multiple radiofrequency signal generators, such that each of the multiple radiofrequency signal generators is connected to a separate one of the multiple match networks.

18. The system as recited in claim 17 , wherein the radiofrequency power supply includes a combiner module having inputs connected to outputs of the multiple match networks, the combiner module configured to combine clean versions of each of the multiple radiofrequency signals as output from the multiple match networks corresponding to the multiple radiofrequency signal generators onto a single output line of the combiner module for transmission to the electrode.

19. The system as recited in claim 18 , wherein the combiner module includes multiple notch filters, with each of the multiple notch filters connected to receive radiofrequency signals from a corresponding one of the multiple match networks, wherein each of the multiple notch filters is configured to reduce and/or eliminate signals outside of a narrow range of frequency, and wherein outputs of the multiple notch filters are connected to the single output line of the combiner module.

20. The system as recited in claim 19 , wherein any given one of the multiple notch filters is configured to pass signals corresponding to the frequency of the particular one of the multip

Assignees

• Lam Res Corp

Inventors

• Keil Douglas
• Karim Ishtak
• Rangineni Yaswanth
• Lavoie Adrien
• Sakiyama Yukinori
• Augustyniak Edward
• Leeser Karl
• Ji Chunhai

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• H01L21/02164

  Electricity · mapped topic