Atomic layer deposition of protective coatings for semiconductor process chamber components

Patent metadata

Field	Value
Publication number	US-12104246-B2
Application number	US-202217718205-A
Country	US
Kind code	B2
Filing date	Apr 11, 2022
Priority date	Apr 27, 2016
Publication date	Oct 1, 2024
Grant date	Oct 1, 2024

Abstract

A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZr x O y solid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

First claim

What is claimed is:

1. A method comprising:
depositing a first layer of yttrium oxide onto a surface of a chamber component for a processing chamber using a first number of repetitions of an atomic layer deposition process, wherein the first layer has a thickness ranging from two monolayers to about 1 micrometer, wherein the surface of the chamber component comprise aluminum oxide;
depositing a second layer of yttrium fluoride onto the surface of the chamber component using a second number of repetitions of the atomic layer deposition process, wherein the second layer has a thickness ranging from two monolayers to about 1 micrometer; and
annealing the chamber component comprising the first layer and the second layer to cause the first layer and the second layer to interdiffuse to form a homogenous corrosion and erosion resistant coating comprising a YO x F y solid state phase of the first layer and the second layer, wherein x and y have values that are based on the first number of repetitions of the atomic layer deposition process that are used to deposit the first layer and the second number of repetitions of the atomic layer deposition process that are used to deposit the second layer;
wherein the chamber component comprises one or more high aspect ratio features, and wherein an interior of the one or more high aspect ratio features are coated with the homogenous corrosion and erosion resistant coating, the high aspect ratio features having an aspect ratio of greater than 50:1.

2. The method of claim 1 , wherein a precursor used to deposit the first layer comprises at least one of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), tris(cyclopentadienyl)yttrium(III), tris(butylcyclopentadienyl)yttrium(III), or tris(2,2,6,6-tetramethyl-3,5-heptanedionato)yttrium(III), and wherein a reactant used to deposit the first layer comprises at least one of H 2 O, O 2 , or O 3 .

3. The method of claim 1 , further comprising:
alternately depositing one of a first plurality of additional layers of yttrium oxide onto the surface of the chamber component and one of a second plurality of additional layers of yttrium fluoride onto the surface of the chamber component until a combined thickness of the first layer, second layer, the first plurality of additional layers and the second plurality of additional layers reaches a target thickness.

4. The method of claim 1 , wherein the first layer is deposited directly on the surface of the chamber component and has a discrete boundary with the surface of the chamber component.

5. The method of claim 1 , wherein the YO x F y solid state phase is an interdiffused and homogenous YO x F y solid state phase, and wherein the annealing is performed at a temperature ranging from about 1000° C. to about 1800° C.

6. The method of claim 1 , wherein the chamber component comprises at least one of a showerhead or a gas delivery plate (GDP) for the processing chamber.

7. The method of claim 1 , wherein the chamber component is selected from the group consisting of: an electrostatic chuck, a ring, a gas line, a nozzle, a lid, a liner, a shield, a plasma screen, a flow equalizer, a cooling base, a chamber lid, and an chamber viewport.

8. The method of claim 1 , wherein the chamber component comprises a ceramic body.

9. The method of claim 1 , wherein the chamber component comprises an alumina body.

10. The method of claim 1 , further comprising:
depositing an additional layer comprising aluminum oxide to cause the surface of the chamber component to comprise aluminum oxide, wherein a precursor used to deposit the additional layer comprises at least one of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, or tris(diethylamido)aluminum, and wherein a reactant used to deposit the first layer comprises at least one of H 2 O, O 2 , or O 3 .

11. A method comprising:
depositing a first layer of yttrium oxide onto a surface of a chamber component for a processing chamber using a first number of repetitions of an atomic layer deposition process, wherein the chamber component comprises a ceramic body, wherein the first layer has a thickness ranging from two monolayers to about 1 micrometer, and wherein the first layer is deposited directly on the surface of the chamber component and has a discrete boundary with the surface of the chamber component;
depositing a second layer of yttrium fluoride onto the surface of the chamber component using a second number of repetitions of the atomic layer deposition process, wherein the second layer has a thickness ranging from two monolayers to about 1 micrometer; and
annealing the chamber component comprising the first layer and the second layer to cause the first layer and the second layer to interdiffuse to form a homogenous corrosion and erosion resistant coating comprising a YO x F y solid state phase of the first layer and the second layer, wherein x and y have values that are based on the first number of repetitions of the atomic layer deposition process that are used to deposit the first layer and the second number of repetitions of the atomic layer deposition process that are used to deposit the second layer;
wherein the chamber component comprises one or more high aspect ratio features, and wherein an interior of the one or more high aspect ratio features are coated with the homogenous corrosion and erosion resistant coating, the high aspect ratio features having an aspect ratio of greater than 50:1.

Assignees

• Applied Materials Inc

Inventors

• Fenwick David
• Sun Jennifer Y

Classifications

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C28/042

  including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides · CPC title

• C23C16/45531

  specially adapted for making ternary or higher compositions · CPC title

• C23C16/40

  Oxides · CPC title