Transversely-excited film bulk acoustic resonators using multiple dielectric layer thicknesses to suppress spurious modes

Patent metadata

Field	Value
Publication number	US-12101078-B2
Application number	US-202318304875-A
Country	US
Kind code	B2
Filing date	Apr 21, 2023
Priority date	Aug 19, 2020
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

Acoustic filters and methods of fabricating acoustic filters are disclosed. A filter includes a single-crystal piezoelectric plate having a front surface and a back surface attached to a substrate, and a plurality of acoustic resonators including a first shunt resonator, a second shunt resonator, and one or more series resonators. Each of the plurality of acoustic resonators includes an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on a respective diaphragm formed by a portion of the piezoelectric plate that spans a cavity in the substrate. A frequency setting dielectric layer is formed over the first and second shunt resonators but not over the one or more series resonators. The frequency setting dielectric layer has a thickness t 1 on the first shunt resonator and a thickness t 2 on the second shunt resonator, where t 1 is not equal to t 2.

First claim

What is claimed:

1. A filter device comprising:
a plurality of acoustic resonators including a first shunt resonator, a second shunt resonator, and one or more series resonators, each of the plurality of acoustic resonators including:
a substrate,
a piezoelectric plate supported by the substrate, and
an interdigital transducer (IDT) at the piezoelectric plate and having interleaved fingers at a diaphragm formed by a portion of the piezoelectric plate that is over a cavity;

wherein at least one frequency setting dielectric layer is at each of the first and second shunt resonators,
wherein the at least one frequency setting dielectric layer has a thickness t 1 on the first shunt resonator and a thickness t 2 on the second shunt resonator, where t 1 is not equal to t 2 , and
wherein the respective thicknesses of the frequency setting dielectric layer are measured in a direction perpendicular to a surface of the respective piezoelectric plate.

2. The filter device of claim 1 , wherein the at least one frequency setting dielectric layer is not over the one or more series resonators.

3. The filter device of claim 1 , wherein a magnitude of a difference between t 1 and t 2 is greater than or equal to 0.5% of a thickness of the respective piezoelectric plates of the first and second shunt resonators and less than or equal to 2% of the thickness of the respective piezoelectric plates of the first and second shunt resonators.

4. The filter device of claim 1 , wherein t 1 and t 2 are both greater than or equal to 25% of a thickness of the respective piezoelectric plates of the first and second shunt resonators.

5. The filter device of claim 1 , wherein the at least one frequency setting dielectric layer comprises at least one of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.

6. The filter device of claim 1 , wherein the piezoelectric plate and the IDT of each of the plurality of acoustic resonators are configured such that a respective radio frequency signal applied to each IDT excites a respective shear primary acoustic mode in the respective diaphragm.

7. The filter device of claim 1 , wherein:
the plurality of acoustic resonators comprises n shunt resonators including the first and second shunt resonators, where n is an integer greater than or equal to two, and
a respective thickness of the at least one frequency setting dielectric layer over each of the n shunt resonators is different from thicknesses of the frequency setting dielectric layer over all other shunt resonators.

8. A filter device, comprising:
a plurality of acoustic resonators including n shunt resonators, where n is an integer greater than one, and one or more series resonator connected in a ladder filter circuit, each of the plurality of acoustic resonators including:
a substrate,
a piezoelectric plate supported by the substrate, and
an interdigital transducer (IDT) on the at the piezoelectric plate and having interleaved fingers on a diaphragm formed by a portion of the piezoelectric plate that is over a cavity,

wherein at least one frequency setting dielectric layer is at each of the n shunt resonators, and
wherein a thickness of the at least one frequency setting dielectric layer over any one of the n shunt resonators is different from thicknesses of the frequency setting dielectric layer over all of the other n shunt resonators.

9. The filter device of claim 8 , wherein the at least one frequency setting dielectric layer is not over the one or more series resonators.

10. The filter device of claim 8 , wherein a magnitude of a difference between a thickness of the at least one frequency setting dielectric layer over any one of the n shunt resonators and a thickness of the frequency setting dielectric layer over any other of the n shunt resonators is greater than or equal to 0.5% of a thickness of the piezoelectric plate of the n shunt resonators.

11. The filter device of claim 8 , wherein a difference between a thickest frequency setting dielectric layer and a thinnest frequency setting dielectric layer over respective shunt resonators of the n shunt resonators is less than or equal to 2(n−1)% of a thickness of the piezoelectric plate of the n shunt resonators.

12. The filter device of claim 8 , wherein respective thicknesses of the at least one frequency setting dielectric layer over all of the n shunt resonators are greater than or equal to 25% of a thickness of the piezoelectric plate of the n shunt resonators.

13. The filter device of claim 8 , wherein the at least one frequency setting dielectric layer comprises at least one of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.

14. The filter device of claim 8 , wherein the piezoelectric plate and the IDT of each of the plurality of acoustic resonators are configured such that a respective radio frequency signal applied to each IDT excites a respective shear primary acoustic mode in the respective diaphragm.

15. A filter device, comprising:
a plurality of acoustic resonators including n shunt resonators, where n is an integer greater than one, and one or more series resonator connected in a ladder filter circuit, each of the plurality of acoustic resonators including:
a substrate,
a piezoelectric plate supported by the substrate, and
an interdigital transducer (IDT) at the piezoelectric plate and having interleaved fingers on a diaphragm formed by a portion of the piezoelectric plate over a cavity;

wherein at least one frequency setting dielectric layer is at the n shunt resonators, and
wherein a thickness of the at least one frequency setting dielectric layer between the interleaved fingers of any one of the n shunt resonators is different from thicknesses of the at least one frequency setting dielectric layer between the interleaved fingers of all other resonators of the n shunt resonators.

16. The filter device of claim 15 , wherein a magnitude of a difference between a thickness of the at least one frequency setting dielectric layer over any one of the n shunt resonators and a thickness of the at least one frequency setting dielectric layer over any other of the n shunt resonators is greater than or equal to 0.5% of a thickness of the piezoelectric plate of the n shunt resonators.

17. The filter device of claim 15 , wherein a difference between a thickest frequency setting dielectric layer and a thinnest frequency setting dielectric layer over respective shunt resonators of the n shunt resonators is less than or equal to 2(n−1)% of a thickness of the piezoelectric plate of the n shunt resonators.

18. The filter device of claim 15 , wherein respective thicknesses of the at least one frequency setting dielectric layer over all of the n shunt resonators are greater than or equal to 25% of a thickness of the piezoelectric plate of the n shunt resonators.

19. The filter device of claim 15 , wherein the at least one frequency setting dielectric layer comprises at least one of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, beryllium oxide, tantalum oxide, and tungsten oxide.

20. The filter device of claim 15 , wherein the at least one frequency setting dielectric layer comprises one or more of a layer disposed at or between the interleaved fingers, a layer disposed on a side of the piezoelectric plate that is opposite to a side at which the interleaved fingers are disposed, or any combination thereof.

Assignees

• Murata Manufacturing Co

Inventors

• Garcia Bryant

Classifications

• H03H9/205

  having multiple resonators (crystal tuning forks H03H9/21) · CPC title

• H03H9/02157 Primary

  Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness · CPC title

• H03H9/568

  consisting of a ladder configuration · CPC title

• H03H2009/02173

  of film bulk acoustic resonators [FBAR] · CPC title

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title