Bonded structures

Patent metadata

Field	Value
Publication number	US-12100684-B2
Application number	US-202218147212-A
Country	US
Kind code	B2
Filing date	Dec 28, 2022
Priority date	Dec 21, 2016
Publication date	Sep 24, 2024
Grant date	Sep 24, 2024

Abstract

A bonded structure can include a first element having a first conductive interface feature and a second element having a second conductive interface feature. An integrated device can be coupled to or formed with the first element or the second element. The first conductive interface feature can be directly bonded to the second conductive interface feature to define an interface structure. The interface structure can be disposed about the integrated device in an at least partially annular profile to connect the first and second elements.

First claim

What is claimed is:

1. A bonded structure comprising:
a first element comprising an integrated device and a first plurality of conductive interface features at least partially embedded in a first nonconductive interface feature, each of the first plurality of conductive interface features comprising a first plurality of discrete shapes spaced apart from one another by the first nonconductive interface feature, the first plurality of discrete shapes disposed in a ring about the integrated device as seen from a plan view, the first element further comprising a patterned metal structure connected to a first conductive interface feature of the first plurality of conductive interface features, the patterned metal structure comprising alternating wide and narrow segments extending vertically through at least a portion of the first element; and
a second element comprising a second plurality of conductive interface features at least partially embedded in a second nonconductive interface feature, the second plurality of conductive interface features directly bonded to the first plurality of conductive interface features and the second nonconductive interface feature directly bonded to the first nonconductive interface feature.

2. The bonded structure of claim 1 , wherein, as seen from the plan view, the first plurality of conductive features comprises an array of multiple rings of discrete shapes disposed about the integrated device.

3. The bonded structure of claim 2 , wherein, as seen from the plan view, the multiple rings comprise a second ring of discrete shapes laterally offset from the ring.

4. The bonded structure of claim 3 , wherein, as seen from the plan view, the ring comprises a first discrete shape and a second discrete shape offset from the first discrete shape in a first direction by a gap, the second ring comprising a third discrete shape offset from the gap in a second direction transverse to the first direction.

5. The bonded structure of claim 1 , wherein the ring of discrete shapes defines an effectively closed profile to connect the first and second elements.

6. The bonded structure of claim 5 , wherein the effectively closed profile substantially seals an interior region of the bonded structure from gases diffusing into the interior region.

7. The bonded structure of claim 1 , wherein, as seen in a plan view, each of the second plurality of conductive interface features comprises a second plurality of discrete shapes spaced apart by the second nonconductive interface feature.

8. The bonded structure of claim 1 , wherein, as seen in the plan view, the first plurality of discrete shapes comprises a plurality of dots.

9. The bonded structure of claim 1 , wherein, as seen in the plan view, the first plurality of discrete shapes comprises a plurality of polygons.

10. The bonded structure of claim 1 , wherein, as seen in the plan view, the first plurality of discrete shapes comprises a plurality of circles or ellipses.

11. The bonded structure of claim 1 , wherein the patterned metal structure comprises a first segment at a first vertical location below a bonding surface of the bonded structure and a second segment at a second vertical location below the bonding surface, the first segment wider than the second segment.

12. The bonded structure of claim 1 , wherein no cavity is provided between the first and second elements.

13. The bonded structure of claim 1 , wherein at least one of the first and second elements comprises a processor die.

14. The bonded structure of claim 1 , wherein at least one of the first and second elements comprises a sensor die.

15. A bonded structure comprising:
a first element having a first plurality of conductive interface features at least partially embedded in and spaced apart from one another by a first nonconductive interface feature, the first element further comprising a first patterned metal structure connected to a first conductive interface feature of the first plurality of conductive interface features, the patterned metal structure comprising a first segment at a first vertical location below a bonding surface of the first element and a second segment at a second vertical location below the bonding surface, the first segment wider than the second segment;
a second element having a second plurality of conductive interface features at least partially embedded in and spaced apart from one another by a second nonconductive interface feature, the first plurality of conductive interface features directly bonded to the second plurality of conductive interface features and the first nonconductive interface feature directly bonded to the second nonconductive interface feature; and
an integrated device coupled to or formed with the first element or the second element, the directly bonded first and second pluralities of conductive interface features disposed in a ring about the integrated device as seen from a plan view.

16. The bonded structure of claim 15 , wherein, as seen in a plan view, the ring comprises a plurality of discrete shapes spaced apart by the first nonconductive interface feature.

17. The bonded structure of claim 16 , wherein, as seen from the plan view, the first plurality of conductive features comprises an array of multiple rings of discrete shapes disposed about the integrated device.

18. The bonded structure of claim 16 , wherein, as seen in the plan view, each of the first plurality of conductive interface features comprises a plurality of dots.

19. The bonded structure of claim 16 , wherein, as seen in the plan view, each of the first plurality of conductive interface features comprises a plurality of polygons.

20. The bonded structure of claim 16 , wherein, as seen in the plan view, each of the first plurality of conductive interface features comprises a plurality of circles or ellipses.

21. The bonded structure of claim 15 , wherein the ring defines an effectively closed profile to connect the first and second elements.

22. The bonded structure of claim 16 , wherein the effectively closed profile substantially seals an interior region of the bonded structure from gases diffusing into the interior region.

23. A bonded structure comprising:
a first element having a first plurality of conductive interface features at least partially embedded in and spaced apart from one another by a first nonconductive interface feature, each of the first plurality of conductive interface features comprising a first plurality of discrete shapes spaced apart from one another by the first nonconductive interface feature, the first element further comprising a first patterned metal structure connected to a first conductive interface feature of the first plurality of conductive interface features, the patterned metal structure comprising alternating wide and narrow segments extending vertically through at least a portion of the first element;
a second element comprising a second plurality of conductive interface features at least partially embedded in and spaced apart from one another by a second nonconductive interface feature, each of the second plurality of conductive interface features comprising a second plurality of discrete shapes spaced apart from one another by the second nonconductive interface feature, the first plurality of conductive interface features directly bonded to the second plurality of conductive interface features and the first nonconductive interface feature directly bonded to the second nonconductive int

Assignees

• Adeia Semiconductor Bonding Technologies Inc

Inventors

• Wang Liang
• Katkar Rajesh
• Delacruz Javier A
• Sitaram Arkalgud R

Classifications

• H10W90/794

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W80/701

  characterised by the pads after the direct bonding · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/037

  by mechanical treatment, e.g. by cutting, pressing or stamping · CPC title